 |
| Place of Origin: | China |
| Brand Name: | PAM-XIAMEN |
| Minimum Order Quantity: | 1-10,000pcs |
|---|---|
| Packaging Details: | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| Delivery Time: | 5-50 working days |
| Payment Terms: | T/T |
| Supply Ability: | 10,000 wafers/month |
| Keyword: | InP Wafer | Wafer Diamter: | 3 Inch |
|---|---|---|---|
| Conduction Type: | Semi Insulating | Product Name: | Indium Phosphide Wafer |
| Application: | 600±25um | Grade: | Dummy Grade |
| TTV: | <12um | Laser Marking: | Upon Request |
| High Light: | test grade wafer,epi ready wafer |
||
Semi-Insulating ,InP ( Indium Phosphide) Crystal Wafer , 3”, Dummy Grade
Semi-Insulating, InP Wafer, 3”, Dummy Grade
| 3"InP Wafer Specification | ||||
| Item | Specifications | |||
| Conduction Type | SI-type | |||
| Dopant | Iron | |||
| Wafer Diameter | 3" | |||
| Wafer Orientation | 100±0.5° | |||
| Wafer Thickness | 600±25um | |||
| Primary Flat Length | 16±2mm | |||
| Secondary Flat Length | 8±1mm | |||
| Carrier Concentration | ≤3x1016cm-3 | (0.8-6)x1018cm-3 | (0.6-6)x1018cm-3 | N/A |
| Mobility | (3.5-4)x103cm2/V.s | (1.5-3.5)x103cm2/V.s | 50-70cm2/V.s | ＞1000cm2/V.s |
| Resistivity | N/A | N/A | N/A | ＞0.5x107Ω.cm |
| EPD | <1000cm-2 | <500cm-2 | <1x103cm-2 | <5x103cm-2 |
| TTV | <12um | |||
| BOW | <12um | |||
| WARP | <15um | |||
| Laser Marking | upon request | |||
| Suface Finish | P/E, P/P | |||
| Epi Ready | yes | |||
| Package | Single wafer container or cassette | |||
PAM-XIAMEN offers InP wafer – Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic (“zinc blende”) crystal structure, identical to that of GaAs and most of the III-V semiconductors.Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide[clarification needed] at 400 °C.,[5] also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphide. InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
Indium Phosphide (InP) is used to produce efficient lasers, sensitive photodetectors and modulators in the wavelength window typically used for telecommunications, i.e., 1550 nm wavelengths, as it is a direct bandgap III-V compound semiconductor material. The wavelength between about 1510 nm and 1600 nm has the lowest attenuation available on optical fibre (about 0.26 dB/km). InP is a commonly used material for the generation of laser signals and the detection and conversion of those signals back to electronic form. Wafer diameters range from 2-4 inches.
Applications are:
• Company networks and data center
• Fibre to the home
• Connections to wireless 3G, LTE and 5G base stations
• Free space satellite communication
| Breakdown field | ≈5·105 V cm-1 |
| Mobility electrons | ≤5400 cm2V-1s-1 |
| Mobility holes | ≤200 cm2 V-1s-1 |
| Diffusion coefficient electrons | ≤130 cm2 s-1 |
| Diffusion coefficient holes | ≤5 cm2 s-1 |
| Electron thermal velocity | 3.9·105 m s-1 |
| Hole thermal velocity | 1.7·105 m s-1 |
About Us
Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.
We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.
4 Inch Indium Phosphide Wafer P Type Test Grade InP Epi Ready Wafer
Single Crystal Indium Phosphide Wafer High Purity 4 Inch Prime Grade
Fe Doped InP Test Grade Wafer 4" Semi Insulating Optical Sensing Application
2 Inch Gallium Nitride Wafer Bulk GaN Substrates For LED HEMT Structure
2 Inch GaN Gallium Nitride Substrates Freestanding High Frequency Devices Use
2 Inch Bulk U Gallium Nitride Wafer Epi Ready Wafer For GaN Laser Diode
6H N Type SiC Wafer Dummy Grade C 0001 Bulk Crystal Growth <50 Arcsec FWHM
On Axis Sic Silicon Carbide Wafer 4 Deg Off 4H N Type Production Grade
Research Grade Silicon Carbide Wafer 6H SiC Semi Standard Wafer Cmp Polished
