Fe Doped InP Test Grade Wafer 4" Semi Insulating Optical Sensing Application

Semi-Insulating ,Fe-Doped Indium Phosphide Substrate , 4”, Test Grade
 
Semi-Insulating, Indium Phosphide Substrate, 4”, Test Grade

PAM-XIAMEN manufactures high purity single crystal Indium Phosphide Wafers for optoelectronics applications. Our standard wafer diameters range from 25.4 mm (1 inch) to 200 mm (6 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, technical grade, and optical grade. PAM-XIAMEN also offer materials to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.

Optical Sensing application

Spectroscopic Sensing aiming environmental protection and identification of dangerous substances
• A growing field is sensing based on the wavelength regime of InP. One example for Gas Spectroscopy is drive test equipment with real-time measurement of (CO, CO2, NOX [or NO + NO2]).
• Quick verification of traces of toxic substances in gases and liquids (including tap water) or surface contaminations down to the ppb level.
• Spectroscopy for non-destructive product control of e.g. food (early detection of spoiled foodstuff)
• Spectroscopy for many novel applications, especially in air pollution control are being discussed today and implementations are on the way.

	Electron Hall mobility versus temperature for different doping levels. Bottom curve - no=Nd-Na=8·1017 cm-3; Middle curve - no=2·1015 cm-3; Top curve - no=3·1013 cm-3. (Razeghi et al. [1988]) and (Walukiewicz et al [1980]).
	Electron Hall mobility versus temperature (high temperatures): Bottom curve - no=Nd-Na~3·1017 cm-3; Middle curve - no~1.5·1016 cm-3; Top curve - no~3·1015 cm-3. (Galavanov and Siukaev[1970]).

For weakly doped n-InP at temperatures close to 300 K electron drift mobility:

µn = (4.2÷5.4)·103·(300/T) (cm2V-1 s-1)

	Hall mobility versus electron concentration for different compensation ratios. θ = Na/Nd, 77 K. Dashed curves are theoretical calculations: 1. θ = 0; 2. θ = 0.2; 3. θ = 0.4; 4. θ = 0.6; 5. θ = 0.8; (Walukiewicz et al. [1980]). Solid line is mean observed values (Anderson et al. [1985]).
	Hall mobility versus electron concentration for different compensation ratios θ =Na/Nd, 300 K. Dashed curves are theoretical calculations: 1. θ = 0; 2. θ = 0.2; 3. θ = 0.4; 4. θ = 0.6; 5. θ = 0.8; (Walukiewicz et al. [1980]). Solid line is mean observed values (Anderson et al. [1985]).

Approximate formula for electron Hall mobility

µ=µOH/[1+(Nd/107)1/2],
where µOH=5000 cm2V-1 s-1,
Nd- in cm-3 (Hilsum [1974])
At 300 K, the electron Hall factor rn≈1 in n-InP.
for Nd > 1015 cm-3.

Hole Hall mobility versus temperature for different doping (Zn) levels. Hole concentration at 300 K: 1. 1.75·1018 cm-3; 2. 3.6·1017 cm-3; 3. 4.4·1016 cm-3. θ=Na/Nd~0.1. (Kohanyuk et al. [1988]).

For weakly doped p-InP at temperature close to 300 K the Hall mobility

µpH~150·(300/T)2.2 (cm2V-1 s-1).

Hole Hall mobility versus hole density, 300 K (Wiley [1975]). The approximate formula for hole Hall mobility: µp=µpo/[1 + (Na/2·1017)1/2], where µpo~150 cm2V-1 s-1, Na- in cm-3

At 300 K, the hole factor in pure p-InP: rp~1

Are You Looking for an InP Wafer?

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