4 Inch Indium Phosphide Wafer P Type Test Grade InP Epi Ready Wafer

P Type , Indium Phosphide Wafer , 4”, Test Grade -InP Wafer Manufacturing
 
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P Type, Indium Phosphide Wafer, 4”, Test Grade

Indium Phosphide Facts

• Molecular weight: 145.792 g/mol
• Melting point: 1062 °C (1943.6 °F)
• It can be used for virtually any electronic device that requires high speed or high power.
• It has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.
• InP is the most important material for the generation of laser signals and the detection and conversion of those signals back to electronic form.
• Indium phosphide (InP) includes phosphorus and indium and is a binary semiconductor.
• It has a zincblende crystal structure similar to GaAs and almost all the III-V semiconductors.

	Field dependences of the electron drift velocity in InP, 300 K. Solid curve are theoretical calculation. Dashed and dotted curve are measured data. (Maloney and Frey [1977]) and (Gonzalez Sanchez et al. [1992]).
	The field dependences of the electron drift velocity for high electric fields. T(K): 1. 95; 2. 300; 3. 400. (Windhorn et al. [1983]).
	Field dependences of the electron drift velocity at different temperatures. Curve 1 -77 K (Gonzalez Sanchez et al. [1992]). Curve 2 - 300 K, Curve 3 - 500 K (Fawcett and Hill [1975]).
	Electron temperature versus electric field for 77 K and 300 K. (Maloney and Frey [1977])
	Fraction of electrons in L and X valleys nL/no and nX/no as a function of electric field, 300 K. (Borodovskii and Osadchii [1987]).
	Frequency dependence of the efficiency η at first (solid line) and at the second (dashed line) harmonic in LSA mode. Monte Carlo simulation. F = Fo + F1·sin(2π·ft) + F2·[sin(4π·ft)+3π/2], Fo=F1=35 kV cm-1, F2=10.5 kV cm-1 (Borodovskii and Osadchii [1987]).
	Longitudinal (D || F) and transverse (D ⊥ F) electron diffusion coefficients at 300 K. Ensemble Monte Carlo simulation. (Aishima and Fukushima [1983]).
	Longitudinal (D || F) and transverse (D ⊥ F) electron diffusion coefficients at 77K. Ensemble Monte Carlo simulation. (Aishima and Fukushima [1983]).

Applications are:

• Connections to wireless 3G, LTE and 5G base stations
• Free space satellite communication
• Long-haul optical fibre connections over great distance up to 5000 km typically >10 Tbit/s
• Metro ring access networks

Telecom/Datacom Application

Indium Phosphide (InP) is used to produce efficient lasers, sensitive photodetectors and modulators in the wavelength window typically used for telecommunications, i.e., 1550 nm wavelengths, as it is a direct bandgap III-V compound semiconductor material. The wavelength between about 1510 nm and 1600 nm has the lowest attenuation available on optical fibre (about 0.26 dB/km). InP is a commonly used material for the generation of laser signals and the detection and conversion of those signals back to electronic form. Wafer diameters range from 2-4 inches.

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