Place of Origin: | China |
Brand Name: | PAM-XIAMEN |
Minimum Order Quantity: | 1-10,000pcs |
---|---|
Packaging Details: | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
Delivery Time: | 5-50 working days |
Payment Terms: | T/T |
Supply Ability: | 10,000 wafers/month |
Keyword: | InP Indium Phosphide Wafer | Product Name: | P Type InP Wafer |
---|---|---|---|
Conduction Type: | P Type | Wafer Diamter: | 4” |
Wafer Thickness: | 350±25um | Grade: | Test Grade |
Primary Flat Length: | 16±2mm | WARP: | <15um |
High Light: | inp wafer,epi ready wafer |
P Type , Indium Phosphide Wafer , 4”, Test Grade -InP Wafer Manufacturing
Please contact our engineer team for more wafer information.
P Type, Indium Phosphide Wafer, 4”, Test Grade
4"InP Wafer Specification | ||||
Item | Specifications | |||
Conduction Type | P-type | |||
Dopant | Zinc | |||
Wafer Diameter | 4" | |||
Wafer Orientation | 100±0.5° | |||
Wafer Thickness | 600±25um | |||
Primary Flat Length | 16±2mm | |||
Secondary Flat Length | 8±1mm | |||
Carrier Concentration | ≤3x1016cm-3 | (0.8-6)x1018cm-3 | (0.6-6)x1018cm-3 | N/A |
Mobility | (3.5-4)x103cm2/V.s | (1.5-3.5)x103cm2/V.s | 50-70cm2/V.s | >1000cm2/V.s |
Resistivity | N/A | N/A | N/A | >0.5x107Ω.cm |
EPD | <1000cm-2 | <1x103cm-2 | <1x103cm-2 | <5x103cm-2 |
TTV | <15um | |||
BOW | <15um | |||
WARP | <15um | |||
Laser Marking | upon request | |||
Suface Finish | P/E, P/P | |||
Epi Ready | yes | |||
Package | Single wafer container or cassette |
Indium Phosphide Facts
![]() |
Field dependences of the electron drift velocity in InP, 300 K. Solid curve are theoretical calculation. Dashed and dotted curve are measured data. (Maloney and Frey [1977]) and (Gonzalez Sanchez et al. [1992]). |
![]() |
The field dependences of the electron drift velocity for high electric fields. T(K): 1. 95; 2. 300; 3. 400. (Windhorn et al. [1983]). |
![]() |
Field dependences of the electron drift velocity at different temperatures. Curve 1 -77 K (Gonzalez Sanchez et al. [1992]). Curve 2 - 300 K, Curve 3 - 500 K (Fawcett and Hill [1975]). |
![]() |
Electron temperature versus electric field for 77 K and 300 K. (Maloney and Frey [1977]) |
![]() |
Fraction of electrons in L and X valleys nL/no and nX/no as a function of electric field, 300 K. (Borodovskii and Osadchii [1987]). |
![]() |
Frequency dependence of the efficiency η at first (solid line) and at the second (dashed line) harmonic in LSA mode. Monte Carlo simulation. F = Fo + F1·sin(2π·ft) + F2·[sin(4π·ft)+3π/2], Fo=F1=35 kV cm-1, F2=10.5 kV cm-1 (Borodovskii and Osadchii [1987]). |
![]() |
Longitudinal (D || F) and transverse (D ⊥ F) electron diffusion coefficients at 300 K. Ensemble Monte Carlo simulation. (Aishima and Fukushima [1983]). |
![]() |
Longitudinal (D || F) and transverse (D ⊥ F) electron diffusion coefficients at 77K. Ensemble Monte Carlo simulation. (Aishima and Fukushima [1983]). |
Applications are:
• Connections to wireless 3G, LTE and 5G base stations
• Free space satellite communication
• Long-haul optical fibre connections over great distance up to 5000 km typically >10 Tbit/s
• Metro ring access networks
Indium Phosphide (InP) is used to produce efficient lasers, sensitive photodetectors and modulators in the wavelength window typically used for telecommunications, i.e., 1550 nm wavelengths, as it is a direct bandgap III-V compound semiconductor material. The wavelength between about 1510 nm and 1600 nm has the lowest attenuation available on optical fibre (about 0.26 dB/km). InP is a commonly used material for the generation of laser signals and the detection and conversion of those signals back to electronic form. Wafer diameters range from 2-4 inches.
Service
7X24-hour Telephone Consulting Service is available.
Reply and solution will be provided in 8 hours upon customer’s service request.
After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.
Quality inspection from raw material to production, and delivery.
Professional quality control person, to avoid the unqualified products flowing to customer.
Strict inspection to Raw material, production, and delivery.
Full series of equipment in quality laboratory.
4 Inch Indium Phosphide Wafer P Type Test Grade InP Epi Ready Wafer
Single Crystal Indium Phosphide Wafer High Purity 4 Inch Prime Grade
Fe Doped InP Test Grade Wafer 4" Semi Insulating Optical Sensing Application
2 Inch Gallium Nitride Wafer Bulk GaN Substrates For LED HEMT Structure
2 Inch GaN Gallium Nitride Substrates Freestanding High Frequency Devices Use
2 Inch Bulk U Gallium Nitride Wafer Epi Ready Wafer For GaN Laser Diode
6H N Type SiC Wafer Dummy Grade C 0001 Bulk Crystal Growth <50 Arcsec FWHM
On Axis Sic Silicon Carbide Wafer 4 Deg Off 4H N Type Production Grade
Research Grade Silicon Carbide Wafer 6H SiC Semi Standard Wafer Cmp Polished