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| Place of Origin: | China |
| Brand Name: | PAM-XIAMEN |
| Minimum Order Quantity: | 1-10,000pcs |
|---|---|
| Price: | By Case |
| Delivery Time: | 5-50 working days |
| Payment Terms: | T/T |
| Supply Ability: | 10,000 wafers/month |
| Growth Method: | VGF | Wafer Diamter: | 2, 3,4 & 6 |
|---|---|---|---|
| Thickness: | 200~550 | Dopant: | Gallium Or Antimony |
| OF: | EJ Or US | Conduction Type: | N-type, P Type, Undoped |
| Electronic Grade: | Used For Diodes And Transistors | Laser Marking: | Upon Request |
| High Light: | semiconductor silicon wafer,germanium wafer |
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Single crystal (Ge)Germanium Wafer
PAM-XIAMENoffers semiconductor materials,Ge(Germanium) Single Crystals and Wafers grown by VGF / LEC
Application:
Germanium blank or window are used in night vision and thermographic imaging solutions for commercial security, fire fighting and industrial monitoring equipment. Also, they are used as filters for analytical and measuring equipment, windows for remote temperature measurement, and mirrors for lasers.
Thin Germanium substrates are used in III-V triple-junction solar cells and for power Concentrated PV (CPV) systems.
General Properties of Germanium Wafer
| General Properties Structure | Cubic, a = 5.6754 Å | ||
| Density: 5.765 g/cm3 | |||
| Melting Point: 937.4 oC | |||
| Thermal Conductivity: 640 | |||
| Crystal Growth Technology | Czochralski | ||
| Doping available | Undoped | Sb Doping | Doping In or Ga |
| Conductive Type | / | N | P |
| Resistivity, ohm.cm | >35 | < 0.05 | 0.05 – 0.1 |
| EPD | < 5×103/cm2 | < 5×103/cm2 | < 5×103/cm2 |
| < 5×102/cm2 | < 5×102/cm2 | < 5×102/cm2 | |
Grades and Application of Germanium wafer
| Electronic Grade | Used for diodes and transistors, |
| Infrared or opitical Grade | Used for IR optical window or disks,opitical components |
| Cell Grade | Used for substrates of solar cell |
Standard Specs of Germanium Crystal and wafer
| Crystal Orientation | <111>,<100> and <110> ± 0.5o or custom orientation | |||
| Crystal boule as grown | 1″ ~ 6″ diameter x 200 mm Length | |||
| Standard blank as cut | 1″x 0.5mm | 2″x0.6mm | 4″x0.7mm | 5″&6″x0.8mm |
| Standard Polished wafer(One/two sides polished) | 1″x 0.30 mm | 2″x0.5mm | 4″x0.5mm | 5″&6″x0.6mm |
Special size and orientation are available upon requested Wafers
Specification of Germanium Wafer
| Item | Specifications | Remarks |
| Growth Method | VGF | |
| Conduction Type | n-type, p type, undoped | |
| Dopant | Gallium or Antimony | |
| Wafer Diamter | 2, 3,4 & 6 | inch |
| Crystal Orientation | (100),(111),(110) | |
| Thickness | 200~550 | um |
| OF | EJ or US | |
| Carrier Concentration | request upon customers | |
| Resistivity at RT | (0.001~80) | Ohm.cm |
| Etch Pit Density | <5000 | /cm2 |
| Laser Marking | upon request | |
| Surface Finish | P/E or P/P | |
| Epi ready | Yes | |
| Package | Single wafer container or cassette |
| 4 inch Ge wafer Specification | for Solar Cells | |
| Doping | P | |
| Doping substances | Ge-Ga | |
| Diameter | 100±0.25 mm | |
| Orientation | (100) 9° off toward <111>+/-0.5 | |
| Off-orientation tilt angle | N/A | |
| Primary Flat Orientation | N/A | |
| Primary Flat Length | 32±1 | mm |
| Secondary Flat Orientation | N/A | |
| Secondary Flat Length | N/A | mm |
| cc | (0.26-2.24)E18 | /c.c |
| Resistivity | (0.74-2.81)E-2 | ohm.cm |
| Electron Mobility | 382-865 | cm2/v.s. |
| EPD | <300 | /cm2 |
| Laser Mark | N/A | |
| Thickness | 175±10 | μm |
| TTV | ＜15 | μm |
| TIR | N/A | μm |
| BOW | <10 | μm |
| Warp | ＜10 | μm |
| Front face | Polished | |
| Back face | Ground | |
Service
7X24-hour Telephone Consulting Service is available.
Reply and solution will be provided in 8 hours upon customer’s service request.
After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.
Quality inspection from raw material to production, and delivery.
Professional quality control person, to avoid the unqualified products flowing to customer.
Strict inspection to Raw material, production, and delivery.
Full series of equipment in quality laboratory.
Germanium Wafer Process
In the germanium wafer production process, germanium dioxide from the residue processing is further purified in chlorination and hydrolysis steps.
1 ) High purity germanium is obtained during zone refining.
2) A germanium crystal is produced via the Czochralski process.
3) The germanium wafer is manufactured via several cutting, grinding, and etching steps.
4) The wafers are cleaned and inspection. During this process, the wafers are single side polished or double side polished according to custom requirement, epi-ready wafer comes.
5) The wafers are packed in single wafer containers, under a nitrogen atmosphere.
About Us
Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.
We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.
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