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3 Inch Silicon Epitaxial Wafer Resistivity <0.018ΩCm Epi Layer Thickness 381±25µM

3 Inch Silicon Epitaxial Wafer Resistivity <0.018ΩCm Epi Layer Thickness 381±25µM

3 Inch Silicon Epitaxial Wafer Resistivity <0.018ΩCm Epi Layer Thickness 381±25µM

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Price: By Case
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: 3" Silicon Epitaxial Wafer Brand: Powerway
Resistivity: <0.018Ωcm Epi Layer Thickness: 20 - 25μm
Thickness: 381 ± 25µm Size: 12"
Epilayer Resistivity: < 1 Um Up To 150 Um Wafer Application: Digital, Linear, Power
High Light:

float zone wafer


cz silicon wafer

3" Silicon Epitaxial Wafer Substrate Thickness 381±25µm / Resistivity <0.018Ωcm Epi Layer Thickness 20-25μm


Our advantages at a glance


1. Advanced epitaxy growth equipment and test equipment.

2. Offer the highest quality with low defect density and good surface roughness.

3. Strong research team support and technology support for our customers


PAM-XIAMEN Epitaxial Wafer Services Specifications:


• Diameters: 50mm,75mm,100mm, 125mm, 150mm

• Wafer orientation: <100>, <111>, <110>

• EPI thickness: 4μm to 150μm

• Dopants: Arsenic, phosphorus, boron

• Typical resistivity ranges

• 0.05 – 1,200 ohm-cm

• 3000 – 5,000 ohm-cm (intrinsic layers)


3" Silicon Epitaxial Wafer Substrate Thickness 381 ± 25µm / Resistivity <0.018Ωcm, Epi Layer Thickness 20 - 25μm / Resistivity 7.5 - 10Ωcm


3" Silicon Epitaxial Wafer Specification
Growth Method CZ
Diameter 76.2 +/- 0.5
Orientation 111
OFF orientation 3° - 4°
Type/Dopant N/Sb (Antimony)
Resistivity <0.018Ωcm
Flats SEMI
Flat, Location 110 +/- 2 Degree
Flat, Primary 22.22 +/- 3.17mm
Flat, location 45 +/- 5 Degree CW from Primary
Flat, Secondary 11.18 +/- 1.52mm
Thickness 381 +/- 25µm
BOW < 40µm
WARP < 40µm
TTV < 10µm
Edges SEMI Rounded
Finish Single Side Polished
Backside Lapped & Etched
Backside Seal Mass Transferred Polysilicon
Back Poly Thickness 2µm
Epitaxial Layer
Type/Dopant N/Phosphorus
Resistivity 7.5 - 10Ωcm
Thickness 20 - 25µm
Others SEMI
Packing Method epak


What is silicon epitaxial wafer?


Silicon epi wafers were first developed around 1966, and achieved commercial acceptance by the early 1980s.[5] Methods for growing the epitaxial layer on monocrystalline silicon or other wafers include: various types of chemical vapor deposition (CVD) classified as Atmospheric pressure CVD (APCVD) or metal organic chemical vapor deposition (MOCVD), as well as molecular beam epitaxy (MBE). Two "kerfless" methods (without abrasive sawing) for separating the epitaxial layer from the substrate are called "implant-cleave" and "stress liftoff". A method applicable when the epi-layer and substrate are the same material employs ion implantation to deposit a thin layer of crystal impurity atoms and resulting mechanical stress at the precise depth of the intended epi layer thickness. The induced localized stress provide a controlled path for crack propagation in the following cleavage step.[7] In the dry stress lift-off process applicable when the epi-layer and substrate are suitably different materials, a controlled crack is driven by a temperature change at the epi/wafer interface purely by the thermal stresses due to the mismatch in thermal expansion between the epi layer and substrate, without the necessity for any external mechanical force or tool to aid crack propagation. It was reported that this process yields single atomic plane cleavage, reducing the need for post lift-off polishing, and allowing multiple reuses of the substrate up to 10 times


Silicon epitaxial wafer is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer, but it needs buffer layer (such as oxide or poly-Si) in between the bulk Si substrate and the top epitaxial layer)

The epitaxial layer can be doped, as it is deposited, to the precise doping concentration while continuing the substrate’s crystalline structure.

: <1 ohm-cm up to 150 ohm-cm

Epilayer thickness: < 1 um up to 150 um

Structure: N/N+, N-/N/N+, N/P/N+, N/N+/P-, N/P/P+, P/P+, P-/P/P+.

Wafer Application: Digital, Linear, Power, MOS, BiCMOS Devices.


About Us


Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.


We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.



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