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| Place of Origin: | China |
| Brand Name: | PAM-XIAMEN |
| Minimum Order Quantity: | 1-10,000pcs |
|---|---|
| Price: | By Case |
| Delivery Time: | 5-50 working days |
| Payment Terms: | T/T |
| Supply Ability: | 10,000 wafers/month |
| Product Name: | GaSb Wafer | Other Name: | P Type Gallium Antimonide Wafer |
|---|---|---|---|
| Feature: | Test Grade | Dopant: | Zinc |
| Wafer Thickness: | 500±25um | Wafer Diameter: | 2" |
| WARP: | <12um | BOW: | <10um |
| High Light: | 2 inch wafer,4 inch wafer |
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P Type , GaSb(Gallium Antimonide) Wafer , 2”, Test Grade -Semiconductor Wafer Manufacturing
2" GaSb Wafer Specification
| Item | Specifications |
| Dopant | Zinc |
| Conduction Type | P-type |
| Wafer Diameter | 2" |
| Wafer Orientation | (100)±0.5° |
| Wafer Thickness | 500±25um |
| Primary Flat Length | 16±2mm |
| Secondary Flat Length | 8±1mm |
| Carrier Concentration | (5-100)x1017cm-3 |
| Mobility | 200-500cm2/V.s |
| EPD | <2x103cm-2 |
| TTV | <10um |
| BOW | <10um |
| WARP | <12um |
| Laser Marking | upon request |
| Suface Finish | P/E, P/P |
| Epi Ready | yes |
| Package | Single wafer container or cassette |
Band structure and carrier concentration of GaSb Wafer include Basic Parameters,Temperature, Dependences,Dependence of the Energy Gap on Hydrostatic Pressure, Effective Masses, Donors and Acceptors
Quality inspection from raw material to production, and delivery.
Professional quality control person, to avoid the unqualified products flowing to customer.
Strict inspection to Raw material, production, and delivery.
Full series of equipment in quality laboratory.
Basic Parameters
| Energy gap | 0.726 eV |
| Energy separation (EΓL) between Γ and L valleys | 0.084 eV |
| Energy separation (EΓX) between Γ and X valleys | 0.31 eV |
| Energy spin-orbital splitting | 0.80 eV |
| Intrinsic carrier concentration | 1.5·1012 cm-3 |
| Intrinsic resistivity | 103 Ω·cm |
| Effective conduction band density of states | 2.1·1017 cm-3 |
| Effective valence band density of states | 1.8·1019 cm-3 |
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Band structure and carrier concentration of GaSb. 300 K Eg= 0.726 eV EL = 0.81 eV EX = 1.03 eV Eso = 0.8 eV |
| Te(L) | Te(X) | Se(L) | Se(X) | S(L) | S(X) |
| ~0.02 | ≤0.08 | ~0.05 | ~0.23 | ~0.15 | ~0.30 |
For typical donor concentrations Nd≥ 1017 cm-3 the shallow donor states connected with Γ-valley did not appear.
The dominant acceptor of undoped GaSb seems to be a native defect.
This acceptor is doubly ionizable
| Ea1 | Ea2 | Si | Ge | Zn |
| 0.03 | 0.1 | ~0.01 | ~0.009 | ~0.037 |
About Us
Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.
We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.
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