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Powerway InSb Wafer 4 Inch Dummy Grade N Type Te Doped Infrared Detectors Use

Powerway InSb Wafer 4 Inch Dummy Grade N Type Te Doped Infrared Detectors Use

Powerway InSb Wafer 4 Inch Dummy Grade N Type Te Doped Infrared Detectors Use

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: Dummy Grade InSb Wafer Wafer Thickness: 1000.0±0.5mm
Package: Epi-Ready,Single Wafer Container Or CF Cassette Grade: Dummy Grade
Wafer Diamter: 4” Keyword: Indium Antimonide Wafer
Surface Finish: P/E, P/P
High Light:

as cut wafer


insb wafer

N Type , Te-doped InSb Wafer , 4”, Dummy Grade -Powerway Wafer




N Type, InSb Wafer, 4”, Dummy Grade

Wafer Specification
Item Specifications
Wafer Diameter


4″ 1000.0±0.5mm

Crystal Orientation


4″ (111)AorB±0.1°



4″ 1000±25um

Primary flat length


4″ 32.5±2.5mm

Secondary flat length


4″ 18±1mm

Surface Finish P/E, P/P
Package Epi-Ready,Single wafer container or CF cassette


Electrical and Doping Specification
Conduction Type n-type n-type n-type
Dopant Tellurium Low tellurium High tellurium
EPD cm-2 ≤50
Mobility cm² V-1s-1 ≥2.5*104 ≥2.5*105 Not Specified
Carrier Concentration cm-3 (1-7)*1017 4*1014-2*1015



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PAM-XIAMEN offers InSb wafer – Indium Antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111)or(100).Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths.

Basic Parameter

Bulk modulus 4.7·1011 dyn cm-1
Density 5.77 g cm-3
Surface microhardness (using Knoop's pyramid test) 220 kg mm-2
Cleavage plane {100}, {100}
Piezoelectric constant e14= -7·10-2 C m-2
Electron g - factor -50.6



Powerway InSb Wafer 4 Inch Dummy Grade N Type Te Doped Infrared Detectors Use Temperature dependences of elastic constants.
Circles - Triangles -

For T = 300 K:

Bulk modulus (compressibility-1) Bs= 4.66·1011 dyn cm-2
Shear modulus C'= 1.51·1011 dyn cm-2
[100] Young's modulus Yo= 4.09·1011 dyn cm-2
[100] Poisson ratio σo = 0.35

Acoustic Wave Speeds

Wave propagation Direction Wave character Expression for wave speed Wave speed (in units of 105 cm/s)
[100] VL (C11/ρ)1/2 3.4
VT (C44/ρ)1/2 2.29
[100] Vl [(C11+Cl2+2C44)/2ρ]1/2 3.76
Vt|| Vt||=VT=(C44/ρ)1/2 2.29
Vt⊥ [(C11-C12)/2ρ]1/2 1.62
[111] Vl' [(C11+2C12+4C44)/3ρ]1/2 3.88
Vt' [(C11-C12+C44)/3ρ]1/2 1.87

Phonon frequencies (in units of 1012 Hz)

νLO(Γ) 5.90 νTO(X5) 5.38
νTO(Γ) 5.54 νTA(L3) 0.98
νTA(X5) 1.12 νLA(L1) 3.81
νLA(X3) 4.30 νLO(L1) 4.82
νLO(X1) 4.75 νTO(L3) 5.31




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