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| Place of Origin: | China |
| Brand Name: | PAM-XIAMEN |
| Minimum Order Quantity: | 1-10,000pcs |
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| Packaging Details: | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| Delivery Time: | 5-50 working days |
| Payment Terms: | T/T |
| Supply Ability: | 10,000 wafers/month |
| Product Name: | Dummy Grade InSb Wafer | Wafer Thickness: | 1000.0±0.5mm |
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| Package: | Epi-Ready,Single Wafer Container Or CF Cassette | Grade: | Dummy Grade |
| Wafer Diamter: | 4” | Keyword: | Indium Antimonide Wafer |
| Surface Finish: | P/E, P/P | ||
| High Light: | as cut wafer,insb wafer |
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N Type , Te-doped InSb Wafer , 4”, Dummy Grade -Powerway Wafer
N Type, InSb Wafer, 4”, Dummy Grade
| Wafer Specification | |
| Item | Specifications |
| Wafer Diameter |
4″ 1000.0±0.5mm |
| Crystal Orientation |
4″ (111)AorB±0.1° |
| Thickness |
4″ 1000±25um |
| Primary flat length |
4″ 32.5±2.5mm |
| Secondary flat length |
4″ 18±1mm |
| Surface Finish | P/E, P/P |
| Package | Epi-Ready,Single wafer container or CF cassette |
| Electrical and Doping Specification | |||
| Conduction Type | n-type | n-type | n-type |
| Dopant | Tellurium | Low tellurium | High tellurium |
| EPD cm-2 | ≤50 | ||
| Mobility cm² V-1s-1 | ≥2.5*104 | ≥2.5*105 | Not Specified |
| Carrier Concentration cm-3 | (1-7)*1017 | 4*1014-2*1015 |
≥1*1018 |
Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.
PAM-XIAMEN offers InSb wafer – Indium Antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111)or(100).Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths.
| Bulk modulus | 4.7·1011 dyn cm-1 |
| Density | 5.77 g cm-3 |
| Surface microhardness (using Knoop's pyramid test) | 220 kg mm-2 |
| Cleavage plane | {100}, {100} |
| Piezoelectric constant | e14= -7·10-2 C m-2 |
| Electron g - factor | -50.6 |
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Temperature dependences of elastic constants. Circles - Triangles - |
For T = 300 K:
| Bulk modulus (compressibility-1) | Bs= 4.66·1011 dyn cm-2 |
| Shear modulus | C'= 1.51·1011 dyn cm-2 |
| [100] Young's modulus | Yo= 4.09·1011 dyn cm-2 |
| [100] Poisson ratio | σo = 0.35 |
| Wave propagation Direction | Wave character | Expression for wave speed | Wave speed (in units of 105 cm/s) |
| [100] | VL | (C11/ρ)1/2 | 3.4 |
| VT | (C44/ρ)1/2 | 2.29 | |
| [100] | Vl | [(C11+Cl2+2C44)/2ρ]1/2 | 3.76 |
| Vt|| | Vt||=VT=(C44/ρ)1/2 | 2.29 | |
| Vt⊥ | [(C11-C12)/2ρ]1/2 | 1.62 | |
| [111] | Vl' | [(C11+2C12+4C44)/3ρ]1/2 | 3.88 |
| Vt' | [(C11-C12+C44)/3ρ]1/2 | 1.87 |
| νLO(Γ) | 5.90 | νTO(X5) | 5.38 |
| νTO(Γ) | 5.54 | νTA(L3) | 0.98 |
| νTA(X5) | 1.12 | νLA(L1) | 3.81 |
| νLA(X3) | 4.30 | νLO(L1) | 4.82 |
| νLO(X1) | 4.75 | νTO(L3) | 5.31 |
Service
7X24-hour Telephone Consulting Service is available.
Reply and solution will be provided in 8 hours upon customer’s service request.
After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.
Quality inspection from raw material to production, and delivery.
Professional quality control person, to avoid the unqualified products flowing to customer.
Strict inspection to Raw material, production, and delivery.
Full series of equipment in quality laboratory.
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