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| Place of Origin: | China |
| Brand Name: | PAM-XIAMEN |
| Minimum Order Quantity: | 1-10,000pcs |
|---|---|
| Packaging Details: | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| Delivery Time: | 5-50 working days |
| Payment Terms: | T/T |
| Supply Ability: | 10,000 wafers/month |
| Product Name: | Prime Grade InAs Wafer | Conduction Type: | P Type |
|---|---|---|---|
| Wafer Thickness: | 900±25um | Wafer Diamter: | 4 Inch |
| Grade: | Prime Grade | Keyword: | Indium Arsenide InAs Wafer |
| EPD: | <3x104cm-2 | BOW: | <15um |
| High Light: | n type wafer,3 inch wafer |
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P Type , InAs (Indium Arsenide) Wafer , 4”, Prime Grade
4" InAs Wafer Specification
| Item | Specifications |
| Dopant | Zinc |
| Conduction Type | P-type |
| Wafer Diameter | 4" |
| Wafer Orientation | (100)±0.5° |
| Wafer Thickness | 900±25um |
| Primary Flat Length | 16±2mm |
| Secondary Flat Length | 8±1mm |
| Carrier Concentration | (1-10)x1017cm-3 |
| Mobility | 100-400cm2/V.s |
| EPD | <3x104cm-2 |
| TTV | <15um |
| BOW | <15um |
| WARP | <20um |
| Laser marking | upon request |
| Suface finish | P/E, P/P |
| Epi ready | yes |
| Package | Single wafer container or cassette |
| Bulk modulus | 5.8·1011 dyn cm-2 |
| Melting point | 942 °C |
| Specific heat | 0.25 J g-1 °C-1 |
| Thermal conductivity | 0.27 W cm-1 °C-1 |
| Thermal diffusivity | 0.19 cm2s-1 |
| Thermal expansion, linear | 4.52·10-6 °C-1 |
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Temperature dependence of linear expansion coefficient (low temperature) |
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Temperature dependence of linear expansion coefficient (high temperature) |
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Temperature dependences of Nernst coefficient (transverse Nernst-Ettinghausen effect) Electron concentration at 77K no (cm-3): 1. 2.96·1016; 2. 4.46·1016; 3. 8.43·1016; 4. 4.53·1017; 5. 1.56·1018; 6. 2.28·1018; 7. 5·1018; 8. 1.68·1019. |
Melting point Tm = 1215 K.
Saturated vapor pressure (in Pascals):
for 950 K - 2·10-3,
for 1000 K - 10-2,
for 1050 K - 10-1.
| Bulk modulus | 5.8·1011 dyn cm-2 |
| Melting point | 942 °C |
| Specific heat | 0.25 J g-1 °C-1 |
| Thermal conductivity | 0.27 W cm-1 °C-1 |
| Thermal diffusivity | 0.19 cm2s-1 |
| Thermal expansion, linear | 4.52·10-6 °C-1 |
|
Temperature dependence of thermal conductivity.
|
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Temperature dependences of thermal conductivity for high temperatures Electron concentration no (cm-3): 1. 5·1016; 2. 2·1016; 3. 3·1016. |
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Temperature dependence of specific heat at constant pressure |
For 298K < T < 1215K
Cp= 0.240 + 3.97·10-5·T (J g-1°C -1).
|
Temperature dependence of linear expansion coefficient (low temperature) |
|
Temperature dependence of linear expansion coefficient (high temperature) |
|
Temperature dependences of Nernst coefficient (transverse Nernst-Ettinghausen effect) Electron concentration at 77K no (cm-3): 1. 2.96·1016; 2. 4.46·1016; 3. 8.43·1016; 4. 4.53·1017; 5. 1.56·1018; 6. 2.28·1018; 7. 5·1018; 8. 1.68·1019. |
Melting point Tm = 1215 K.
Saturated vapor pressure (in Pascals):
for 950 K - 2·10-3,
for 1000 K - 10-2,
for 1050 K - 10-1.
About Us
Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.
We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.
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