 |
| Place of Origin: | China |
| Brand Name: | PAM-XIAMEN |
| Minimum Order Quantity: | 1-10,000pcs |
|---|---|
| Packaging Details: | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| Delivery Time: | 5-50 working days |
| Payment Terms: | T/T |
| Supply Ability: | 10,000 wafers/month |
| Product Name: | Prime Grade GaAs Wafer | Keyword: | Gallium Arsenide Substrate Wafer |
|---|---|---|---|
| Wafer Diamter: | 6 Inch | Grade: | Prime Grade |
| Conduction Type: | Semi-insulating | Usage: | Microelectronics |
| Thickness(µm): | 675±25 | Bow(µm): | N/A |
| High Light: | n type silicon wafer,gaas wafer |
||
Semi-Insulating , Epi-Ready Gallium Arsenide Substrate, 6”, Prime Grade
(6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications
| Item | Specifications | Remarks |
| Conduction Type |
Semi-insulating |
|
| Growth Method | VGF | |
| Dopant | Undoped | |
| Type | N | |
| Diamater(mm) | 150±0.25 | |
| Orientation |
(100)0°±3.0° |
|
| NOTCH Orientation | 〔010〕±2° | |
| NOTCH Deepth(mm) | (1-1.25)mm 89°-95° | |
| Carrier Concentration |
N/A |
|
| Resistivity(ohm.cm | ＞1.0×107 or 0.8-9 x10-3 | |
| Mobility(cm2/v.s) | N/A | |
| Dislocation |
N/A |
|
| Thickness(µm) |
675±25 |
|
| Edge Exclusion for Bow and Warp(mm) | N/A | |
| Bow(µm) | N/A | |
| Warp(µm) |
≤20.0 |
|
| TTV(µm) | ≤10.0 | |
| TIR(µm) | ≤10.0 | |
| LFPD(µm) |
N/A |
|
| Polishing | P/P Epi-Ready |
Properties of GaAs Crystal
| Properties | GaAs |
| Atoms/cm3 | 4.42 x 1022 |
| Atomic Weight | 144.63 |
| Breakdown Field | approx. 4 x 105 |
| Crystal Structure | Zincblende |
| Density (g/cm3) | 5.32 |
| Dielectric Constant | 13.1 |
| Effective Density of States in the Conduction Band, Nc (cm-3) | 4.7 x 1017 |
| Effective Density of States in the Valence Band, Nv (cm-3) | 7.0 x 1018 |
| Electron Affinity (V) | 4.07 |
| Energy Gap at 300K (eV) | 1.424 |
| Intrinsic Carrier Concentration (cm-3) | 1.79 x 106 |
| Intrinsic Debye Length (microns) | 2250 |
| Intrinsic Resistivity (ohm-cm) | 108 |
| Lattice Constant (angstroms) | 5.6533 |
| Linear Coefficient of Thermal Expansion, | 6.86 x 10-6 |
| ΔL/L/ΔT (1/deg C) | |
| Melting Point (deg C) | 1238 |
| Minority Carrier Lifetime (s) | approx. 10-8 |
| Mobility (Drift) | 8500 |
| (cm2/V-s) | |
| µn, electrons | |
| Mobility (Drift) | 400 |
| (cm2/V-s) | |
| µp, holes | |
| Optical Phonon Energy (eV) | 0.035 |
| Phonon Mean Free Path (angstroms) | 58 |
| Specific Heat | 0.35 |
| (J/g-deg C) | |
| Thermal Conductivity at 300 K | 0.46 |
| (W/cm-degC) | |
| Thermal Diffusivity (cm2/sec) | 0.24 |
| Vapor Pressure (Pa) | 100 at 1050 deg C; |
| 1 at 900 deg C |
| Wavelength | Index |
| (µm) | |
| 2.6 | 3.3239 |
| 2.8 | 3.3204 |
| 3 | 3.3169 |
| 3.2 | 3.3149 |
| 3.4 | 3.3129 |
| 3.6 | 3.3109 |
| 3.8 | 3.3089 |
| 4 | 3.3069 |
| 4.2 | 3.3057 |
| 4.4 | 3.3045 |
| 4.6 | 3.3034 |
| 4.8 | 3.3022 |
| 5 | 3.301 |
| 5.2 | 3.3001 |
| 5.4 | 3.2991 |
| 5.6 | 3.2982 |
| 5.8 | 3.2972 |
| 6 | 3.2963 |
| 6.2 | 3.2955 |
| 6.4 | 3.2947 |
| 6.6 | 3.2939 |
| 6.8 | 3.2931 |
| 7 | 3.2923 |
| 7.2 | 3.2914 |
| 7.4 | 3.2905 |
| 7.6 | 3.2896 |
| 7.8 | 3.2887 |
| 8 | 3.2878 |
| 8.2 | 3.2868 |
| 8.4 | 3.2859 |
| 8.6 | 3.2849 |
| 8.8 | 3.284 |
| 9 | 3.283 |
| 9.2 | 3.2818 |
| 9.4 | 3.2806 |
| 9.6 | 3.2794 |
| 9.8 | 3.2782 |
| 10 | 3.277 |
| 10.2 | 3.2761 |
| 10.4 | 3.2752 |
| 10.6 | 3.2743 |
| 10.8 | 3.2734 |
| 11 | 3.2725 |
| 11.2 | 3.2713 |
| 11.4 | 3.2701 |
| 11.6 | 3.269 |
| 11.8 | 3.2678 |
| 12 | 3.2666 |
| 12.2 | 3.2651 |
| 12.4 | 3.2635 |
| 12.6 | 3.262 |
| 12.8 | 3.2604 |
| 13 | 3.2589 |
| 13.2 | 3.2573 |
| 13.4 | 3.2557 |
| 13.6 | 3.2541 |
PAM-XIAMEN provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for opto-electronics and micro-electronics industry for making LD , LED , microwave circuit and solar cell applications , the wafers is in diameter range from 2" to 6" in various thicknesses and orientations. We offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method , allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical properties and excellent surface quality . Gallium Arsenide can be supplied as ingots and polished wafer, both conducting and semi-insulating GaAs wafer , mechanical grade and epi ready grade are all available . We can offer GaAs wafer with low EPD value and high surface quality suitable for your MOCVD and MBE applications. PAM-XIAMEN can produce wide range grades: prime grade, test grade, and optical grade. Please contact our engineer team for more wafer information.
What is the GaAs Process?
GaAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.
What is the Thermal properties of GaAs Wafer?
| Bulk modulus | 7.53·1011 dyn cm-2 |
| Melting point | 1240 °C |
| Specific heat | 0.33 J g-1°C -1 |
| Thermal conductivity | 0.55 W cm-1 °C -1 |
| Thermal diffusivity | 0.31cm2s-1 |
| Thermal expansion, linear | 5.73·10-6 °C -1 |
 |
Temperature dependence of thermal conductivity n-type sample, no (cm-3): 1. 1016; 2. 1.4·1016; 3. 1018; p-type sample, po (cm-3): 4. 3·1018; 5. 1.2·1019. |
|
Temperature dependence of thermal conductivity (for high temperature) n-type sample, no (cm-3): 1. 7·1015; 2. 5·1016; 3. 4·1017; 4. 8·1018; p-type sample, po (cm-3): 5. 6·1019. |
|
Temperature dependence of specific heat at constant pressure Ccl= 3kbN = 0.345 J g-1°C -1. N is the number of atoms in 1 g og GaAs. Dashed line: Cp= (4π2Ccl / 5θo3)·T3 for θo= 345 K. |
|
Temperature dependence of linear expansion coefficient α |
| Melting point | Tm=1513 K |
| For 0 < P < 45 kbar | Tm= 1513 - 3.5P (P in kbar) |
| Saturated vapor pressure | (in Pascals) |
| 1173 K | 1 |
| 1323 K | 100 |
Are You Looking for GaAs Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including GaAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!
Service
7X24-hour Telephone Consulting Service is available.
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Professional quality control person, to avoid the unqualified products flowing to customer.
Strict inspection to Raw material, production, and delivery.
Full series of equipment in quality laboratory.
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