6 Inch Gallium Arsenide Substrate Mechanical Grade High Resistance N Type

Product Details:

Place of Origin:	China
Brand Name:	PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity:	1-10,000pcs
Packaging Details:	Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time:	5-50 working days
Payment Terms:	T/T
Supply Ability:	10,000 wafers/month

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Detailed Product Description

Product Name:	GaAs Wafer	Wafer Diamter:	6 Inch
Conduction Type:	Semi-insulating	Grade:	Mechanical Grade
Usage:	Microelectronics	Keyword:	Gallium Arsenide Wafer
High Light:	n type silicon wafer , p type silicon wafer

Semi-Insulating, Gallium Arsenide Substrate, 6”, Mechanical Grade

(6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item	Specifications	Remarks
Conduction Type	Semi-insulating
Growth Method	VGF
Dopant	Undoped
Type	N
Diamater(mm)	150±0.25
Orientation	(100)0°±3.0°
NOTCH Orientation	〔010〕±2°
NOTCH Deepth(mm)	(1-1.25)mm 89°-95°
Carrier Concentration	N/A
Resistivity(ohm.cm	＞1.0×107 or 0.8-9 x10-3
Mobility(cm2/v.s)	N/A
Dislocation	N/A
Thickness(µm)	675±25
Edge Exclusion for Bow and Warp(mm)	N/A
Bow(µm)	N/A
Warp(µm)	≤20.0
TTV(µm)	≤10.0
TIR(µm)	≤10.0
LFPD(µm)	N/A
Polishing	P/P Epi-Ready

Properties of GaAs Crystal

Properties	GaAs
Atoms/cm³	4.42 x 10²²
Atomic Weight	144.63
Breakdown Field	approx. 4 x 10⁵
Crystal Structure	Zincblende
Density (g/cm³)	5.32
Dielectric Constant	13.1
Effective Density of States in the Conduction Band, Nc (cm^-3)	4.7 x 10¹⁷
Effective Density of States in the Valence Band, Nv (cm^-3)	7.0 x 10¹⁸
Electron Affinity (V)	4.07
Energy Gap at 300K (eV)	1.424
Intrinsic Carrier Concentration (cm^-3)	1.79 x 10⁶
Intrinsic Debye Length (microns)	2250
Intrinsic Resistivity (ohm-cm)	108
Lattice Constant (angstroms)	5.6533
Linear Coefficient of Thermal Expansion,	6.86 x 10^-6
ΔL/L/ΔT (1/deg C)	6.86 x 10^-6
Melting Point (deg C)	1238
Minority Carrier Lifetime (s)	approx. 10^-8
Mobility (Drift)	8500
(cm²/V-s)
µ_n, electrons
Mobility (Drift)	400
(cm²/V-s)
µ_p, holes
Optical Phonon Energy (eV)	0.035
Phonon Mean Free Path (angstroms)	58
Phonon Mean Free Path (angstroms)	58
Specific Heat	0.35
(J/g-deg C)	0.35
Thermal Conductivity at 300 K	0.46
(W/cm-degC)	0.46
Thermal Diffusivity (cm²/sec)	0.24
Vapor Pressure (Pa)	100 at 1050 deg C;
Vapor Pressure (Pa)	1 at 900 deg C

What is GaAs wafer?

GaAs wafer is an important semiconducor material. It belongs to group III-V compound semiconductor. It is a sphalerite type lattice structure with a lattice constant of 5.65x 10-10m, a melting point of 1237 ℃ and a band gap of 1.4 EV. Gallium arsenide can be made into semi insulating high resistance materials with resistivity higher than silicon and germanium by more than three orders of magnitude, which can be used to make integrated circuit substrate, infrared detector, γ photon detector, etc. Because its electron mobility is 5-6 times larger than that of silicon, it has been widely used in microwave devices and high-speed digital circuits. The semiconductor device made of GaAs has the advantages of high frequency, high temperature and low temperature, low noise and strong radiation resistance. In addition, it can also be used to make bulk effect devices.

What is the Mechanical properties, elastic constants, lattice vibrations of GaAs Wafer?

Basic Parameter

Bulk modulus	7.53·1011 dyn cm-2
Density	5.317 g cm-3
Hardness on the Mohs scale	between 4 and 5
Surface microhardness (using Knoop's pyramid test)	750 kg mm-2
Cleavage plane	{110}
Piezoelectric constant	e14=-0.16 C m-2

Elastic constants 300 K.

C11=11.90·1011 dyn/cm2
C12=5.34·1011 dyn/cm2
C44=5.96·1011 dyn/cm2

Temperature dependences of elastic constants.
For 0<T<Tm=1513K (in units of 1011 dyn cm-2)
C11= 12.17 - 1.44·10-3T
C12= 5.46 - 0.64·10-3T
C44= 6.16 - 0.70·10-3T

For T = 300 K

Bulk modulus (compressibility-1)	Bs= 7.53·1011dyn/cm2
Shear modulus	C'= 3.285·1011dyn/cm2
[100] Young's modulus	Yo= 8.59·1011dyn/cm2
[100] Poisson ratio	σo = 0.31

Acoustic Wave Speeds

Wave propagation Direction	Wave character	Expression for wave speed	Wave speed (in units of 105 cm/s)
[100]	VL	(C11/ρ )1/2	4.73
[100]	VT	(C44/ρ )1/2	3.35
[110]	Vl	[(C11+Cl2+2C44)/2ρ ]1/2	5.24
	Vt\|\|	Vt\|\|=VT=(C44/ρ)1/2	3.35
	Vt⊥	[(C11-C12)/2ρ]1/2	2.48
[111]	Vl'	[(C11+2C12+4C44)/3ρ]1/2	5.4
[111]	Vt'	[(C11-C12+C44)/3ρ]1/2	2.8

Phonon frequencies

(in units of 1012 Hz)

νTO(Γ)	8.02	νLO (X)	7.22
νLO(Γ)	8.55	νTA(L)	1.86
νTA(X)	2.36	νLA(L)	6.26
νLA(X)	6.80	νTO(L)	7.84
νTO(X)	7.56	νLO(L)	7.15

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