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6 Inch Gallium Arsenide Substrate Mechanical Grade High Resistance N Type

6 Inch Gallium Arsenide Substrate Mechanical Grade High Resistance N Type

6 Inch Gallium Arsenide Substrate Mechanical Grade High Resistance N Type

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: GaAs Wafer Wafer Diamter: 6 Inch
Conduction Type: Semi-insulating Grade: Mechanical Grade
Usage: Microelectronics Keyword: Gallium Arsenide Wafer
High Light:

n type silicon wafer


p type silicon wafer

Semi-Insulating, Gallium Arsenide Substrate, 6”, Mechanical Grade



(6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications

Item Specifications Remarks
Conduction Type



Growth Method VGF  
Dopant Undoped  
Type N  
Diamater(mm) 150±0.25  



NOTCH Orientation 〔010〕±2°  
NOTCH Deepth(mm) (1-1.25)mm 89°-95°  
Carrier Concentration



Resistivity(ohm.cm >1.0×107 or 0.8-9 x10-3  
Mobility(cm2/v.s) N/A  






Edge Exclusion for Bow and Warp(mm) N/A  
Bow(µm) N/A  



TTV(µm) ≤10.0  
TIR(µm) ≤10.0  



Polishing P/P Epi-Ready  


Properties of GaAs Crystal

Properties GaAs
Atoms/cm3 4.42 x 1022
Atomic Weight 144.63
Breakdown Field approx. 4 x 105
Crystal Structure Zincblende
Density (g/cm3) 5.32
Dielectric Constant 13.1
Effective Density of States in the Conduction Band, Nc (cm-3) 4.7 x 1017
Effective Density of States in the Valence Band, Nv (cm-3) 7.0 x 1018
Electron Affinity (V) 4.07
Energy Gap at 300K (eV) 1.424
Intrinsic Carrier Concentration (cm-3) 1.79 x 106
Intrinsic Debye Length (microns) 2250
Intrinsic Resistivity (ohm-cm) 108
Lattice Constant (angstroms) 5.6533
Linear Coefficient of Thermal Expansion, 6.86 x 10-6
ΔL/L/ΔT (1/deg C)
Melting Point (deg C) 1238
Minority Carrier Lifetime (s) approx. 10-8
Mobility (Drift) 8500
µn, electrons
Mobility (Drift) 400
µp, holes
Optical Phonon Energy (eV) 0.035
Phonon Mean Free Path (angstroms) 58
Specific Heat 0.35
(J/g-deg C)
Thermal Conductivity at 300 K 0.46
Thermal Diffusivity (cm2/sec) 0.24
Vapor Pressure (Pa) 100 at 1050 deg C;
1 at 900 deg C




What is GaAs wafer?


GaAs wafer is an important semiconducor material. It belongs to group III-V compound semiconductor. It is a sphalerite type lattice structure with a lattice constant of 5.65x 10-10m, a melting point of 1237 ℃ and a band gap of 1.4 EV. Gallium arsenide can be made into semi insulating high resistance materials with resistivity higher than silicon and germanium by more than three orders of magnitude, which can be used to make integrated circuit substrate, infrared detector, γ photon detector, etc. Because its electron mobility is 5-6 times larger than that of silicon, it has been widely used in microwave devices and high-speed digital circuits. The semiconductor device made of GaAs has the advantages of high frequency, high temperature and low temperature, low noise and strong radiation resistance. In addition, it can also be used to make bulk effect devices.


What is the Mechanical properties, elastic constants, lattice vibrations of GaAs Wafer?

Basic Parameter

Bulk modulus 7.53·1011 dyn cm-2
Density 5.317 g cm-3
Hardness on the Mohs scale between 4 and 5
Surface microhardness (using Knoop's pyramid test) 750 kg mm-2
Cleavage plane {110}
Piezoelectric constant e14=-0.16 C m-2

Elastic constants 300 K.

C11=11.90·1011 dyn/cm2
C12=5.34·1011 dyn/cm2
C44=5.96·1011 dyn/cm2

6 Inch Gallium Arsenide Substrate Mechanical Grade High Resistance N Type Temperature dependences of elastic constants.
For 0<T<Tm=1513K (in units of 1011 dyn cm-2)
C11= 12.17 - 1.44·10-3T
C12= 5.46 - 0.64·10-3T
C44= 6.16 - 0.70·10-3T

For T = 300 K

Bulk modulus (compressibility-1) Bs= 7.53·1011dyn/cm2
Shear modulus C'= 3.285·1011dyn/cm2
[100] Young's modulus Yo= 8.59·1011dyn/cm2
[100] Poisson ratio σo = 0.31

Acoustic Wave Speeds

Expression for wave speed Wave speed
(in units of
105 cm/s)
[100] VL (C11/ρ )1/2 4.73
VT (C44/ρ )1/2 3.35
[110] Vl [(C11+Cl2+2C44)/2ρ ]1/2 5.24
Vt|| Vt||=VT=(C44/ρ)1/2 3.35
Vt⊥ [(C11-C12)/2ρ]1/2 2.48
[111] Vl' [(C11+2C12+4C44)/3ρ]1/2 5.4
Vt' [(C11-C12+C44)/3ρ]1/2 2.8

Phonon frequencies

(in units of 1012 Hz)

νTO(Γ) 8.02 νLO (X) 7.22
νLO(Γ) 8.55 νTA(L) 1.86
νTA(X) 2.36 νLA(L) 6.26
νLA(X) 6.80 νTO(L) 7.84
νTO(X) 7.56 νLO(L) 7.15




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