Place of Origin: | China |
Brand Name: | PAM-XIAMEN |
Minimum Order Quantity: | 1-10,000pcs |
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Price: | By Case |
Delivery Time: | 5-50 working days |
Payment Terms: | T/T |
Supply Ability: | 10,000 wafers/month |
Grade: | Dummy Grade | Name: | 6H N Type SIC Wafer |
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Application: | Researcher | Description: | Semiconductor Silicon Carbide Wafer |
Size: | 10mm X 10mm | Keywords: | SiC Wafer |
Diameter: | (50.8 ± 0.38) Mm | Dopant: | Nitrogen |
High Light: | 4h sic wafer,sic wafer |
C(0001) 6H N Type SiC Wafer , Dummy Grade , 10mm x 10mm
Here shows detail specification:
SILICON CARBIDE MATERIAL PROPERTIES
Polytype | Single Crystal 4H | Single Crystal 6H |
Lattice Parameters | a=3.076 Å | a=3.073 Å |
c=10.053 Å | c=15.117 Å | |
Stacking Sequence | ABCB | ABCACB |
Band-gap | 3.26 eV | 3.03 eV |
Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
Refraction Index | no = 2.719 | no = 2.707 |
ne = 2.777 | ne = 2.755 | |
Dielectric Constant | 9.6 | 9.66 |
Thermal Conductivity | 490 W/mK | 490 W/mK |
Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
Mohs Hardness | ~9 | ~9 |
6H N Type SiC Wafer, Dummy Grade,10mm x 10mm
SUBSTRATE PROPERTY | S6H-51-N-PWAM-330 S6H-51-N-PWAM-430 | |
Description | Dummy Grade 6H SiC Substrate | |
Polytype | 6H | |
Diameter | (50.8 ± 0.38) mm | |
Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm | |
Carrier Type | n-type | |
Dopant | Nitrogen | |
Resistivity (RT) | 0.012 – 0.0028 Ω·cm | |
Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) | |
FWHM | <50 arcsec | |
Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 | |
Surface Orientation | ||
On axis | <0001>± 0.5° | |
Off axis | 4°or 8° toward <11-20>± 0.5° | |
Primary flat orientation | Parallel {1-100} ± 5° | |
Primary flat length | 16.00 ± 1.70) mm | |
Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° | |
C-face:90° ccw. from orientation flat ± 5° | ||
Secondary flat length | 8.00 ± 1.70 mm | |
Surface Finish | Single or double face polished | |
Packaging | Single wafer box or multi wafer box | |
Usable area | ≥ 90 % | |
Edge exclusion | 1 mm |
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,weare devoted to continuously improve the quality of currently substrates and develop large size substrates.
SiC crystal growth
Bulk crystal growth is the technique for fabrication of single crystalline substrates , making the base for further device processing.To have a breakthrough in SiC technology obviously we need production of SiC substrate with a reproducible process.6H- and 4H- SiC crystals are grown in graphite crucibles at high temperatures up to 2100—2500°C. The operating temperature in the crucible is provided either by inductive (RF) or resistive heating. The growth occurs on thin SiC seeds. The source represents polycrystalline SiC powder charge. The SiC vapor in the growth chamber mainly consists of three species, namely, Si, Si2C, and SiC2, which are diluted by carrier gas, for example, Argon. The SiC source evolution includes both time variation of porosity and granule diameter and graphitization of the powder granules.
SiC MicroElectromechanical Systems (MEMS) and Sensors
For applications requiring high temperature, low-leakage SiC electronics not possible with SiC layers deposited on silicon (including high-temperature transistors, as discussed in Section 5.6.2), concepts for integrating much more capable electronics with MEMS on 4H/6H SiC wafers with epilayers have also been proposed. For example, pressure sensors being developed for use in higher temperature regions of jet engines are implemented in 6H-SiC, largely owing to the fact that low junction leakage is required to achieve proper sensor operation . On-chip 4H/6H integrated transistor electronics that beneficially enable signal conditioning at the high-temperature sensing site are also being developed . With all micromechanical-based sensors, it is vital to package the sensor in a manner that minimizes the imposition of thermomechanical induced stresses (which arise owing to thermal expansion coefficient mismatches over much larger temperature spans enabled by SiC) onto the sensing elements. Therefore (as mentioned previously in Section 5.5.6), advanced packaging is almost as critical as the use of SiC toward usefully expanding the operational envelope of MEMS in harsh environments.
As discussed in Section 5.3.1, a primary application of SiC harsh-environment sensors is to enable active monitoring and control of combustion engine systems to improve fuel efficiency while reducing pollution. Toward this end, SiC’s high-temperature capabilities have enabled the realization of catalytic metal–SiC and metal-insulator–SiC prototype gas sensor structures with great promise for emission monitoring applications and fuel system leak detection . High-temperature operation of these structures, not possible with silicon, enables rapid detection of changes in hydrogen and hydrocarbon content to sensitivities of parts per million in very small-sized sensors that could easily be placed unobtrusively on an engine without the need for cooling. However, further improvements to the reliability, reproducibility, and cost of SiC-based gas sensors are needed before these systems will be ready for widespread use in consumer automobiles and aircraft. In general, the same can be said for most SiC MEMS, which will not achieve widespread beneficial system insertion until high reliability in harsh environments is assured via further technology development.
About Us
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After years of development, we have established perfect sales network and integrated after-sale service system at domestic and abroad, which enables the company to provide timely, accurate and efficient services, and won good customer reputations. The products are sold all over in China and exported to more than 30 countries and regions such as Europe, America, Southeast Asia, South America, Middle East and Africa. The production, sales volume and scale are all ranked first in the same industry.
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