Home ProductsSilicon Carbide Wafer

Semi Insulating SiC Silicon Carbide Substrate 6H Dummy Grade 10mmx10mm

Semi Insulating SiC Silicon Carbide Substrate 6H Dummy Grade 10mmx10mm

Semi Insulating SiC Silicon Carbide Substrate 6H Dummy Grade 10mmx10mm

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Price: By Case
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
Contact Now
Detailed Product Description
Name: Semi Insulating SIC Wafer Grade: Dummy Grade
Description: 6H SEMI Substrate Size: 10mm X 10mm
Keywords: Single Crystal SiC Silicon Carbide Wafer Application: Optoelectronic Industry
High Light:

4h sic wafer


sic wafer

6H Semi-Insulating SiC Substrate, Dummy Grade,10mm x 10mm

SiC crystal growth

Bulk crystal growth is the technique for fabrication of single crystalline substrates , making the base for further device processing.To have a breakthrough in SiC technology obviously we need production of SiC substrate with a reproducible process.6H- and 4H- SiC crystals are grown in graphite crucibles at high temperatures up to 2100—2500°C. The operating temperature in the crucible is provided either by inductive (RF) or resistive heating. The growth occurs on thin SiC seeds. The source represents polycrystalline SiC powder charge. The SiC vapor in the growth chamber mainly consists of three species, namely, Si, Si2C, and SiC2, which are diluted by carrier gas, for example, Argon. The SiC source evolution includes both time variation of porosity and granule diameter and graphitization of the powder granules.


Please contact us for more information

PolytypeSingle Crystal 4HSingle Crystal 6H
Lattice Parametersa=3.076 Åa=3.073 Å
 c=10.053 Åc=15.117 Å
Stacking SequenceABCBABCACB
Band-gap3.26 eV3.03 eV
Density3.21 · 103 kg/m33.21 · 103 kg/m3
Therm. Expansion Coefficient4-5×10-6/K4-5×10-6/K
Refraction Indexno = 2.719no = 2.707
 ne = 2.777ne = 2.755
Dielectric Constant9.69.66
Thermal Conductivity490 W/mK490 W/mK
Break-Down Electrical Field2-4 · 108 V/m2-4 · 108 V/m
Saturation Drift Velocity2.0 · 105 m/s2.0 · 105 m/s
Electron Mobility800 cm2/V·S400 cm2/V·S
hole Mobility115 cm2/V·S90 cm2/V·S
Mohs Hardness~9~9


PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide) wafer for electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available.

6H Semi-Insulating SiC Substrate, Dummy Grade,10mm x 10mm

DescriptionDummy Grade 6H SEMI Substrate
Diameter(50.8 ± 0.38) mm
Thickness(250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
Resistivity (RT)>1E5 Ω·cm
Surface Roughness< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM<50 arcsec
Micropipe DensityA+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
Surface Orientation
On axis <0001>± 0.5°
Off axis 3.5° toward <11-20>± 0.5°
Primary flat orientationParallel {1-100} ± 5°
Primary flat length16.00 ± 1.70 mm
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length8.00 ± 1.70 mm
Surface FinishSingle or double face polished
PackagingSingle wafer box or multi wafer box
Usable area≥ 90 %
Edge exclusion1 mm


SiC Insulators: Thermal Oxides and MOS Technology


The vast majority of semiconductor-integrated circuit chips in use today rely on silicon metal-oxide–

semiconductor field-effect transistors (MOSFETs), whose electronic advantages and operational

device physics are summarized in Katsumata’s chapter and elsewhere . Given the extreme

usefulness and success of inversion channel MOSFET-based electronics in VLSI silicon (as well as

discrete silicon power devices), it is naturally desirable to implement high-performance inversion

channel MOSFETs in SiC. Like silicon, SiC forms a thermal Semi Insulating SiC Silicon Carbide Substrate 6H Dummy Grade 10mmx10mm when it is sufficiently heated in an

oxygen environment. While this enables SiC MOS technology to somewhat follow the highly successful

path of silicon MOS technology, there are nevertheless important differences in insulator quality and

device processing that are presently preventing SiC MOSFETs from realizing their full beneficial

potential. While the following discourse attempts to quickly highlight key issues facing SiC MOSFET

development, more detailed insights can be found in References 133–142.
About Us
Responsibility is the assurance of quality, and quality is the life of corporation. We are looking forward to long term cooperation with customers, we will make best service and after sales service for all of our customers. If you have any inquiry, please don’t hesitate to contact us. We will reply you at the first time as we can.
After years of development, we have established perfect sales network and integrated after-sale service system at domestic and abroad, which enables the company to provide timely, accurate and efficient services, and won good customer reputations. The products are sold all over in China and exported to more than 30 countries and regions such as Europe, America, Southeast Asia, South America, Middle East and Africa. The production, sales volume and scale are all ranked first in the same industry.

Contact Details
Send your inquiry directly to us (0 / 3000)

Other Products