Place of Origin: | China |
Brand Name: | PAM-XIAMEN |
Minimum Order Quantity: | 1-10,000pcs |
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Price: | By Case |
Delivery Time: | 5-50 working days |
Payment Terms: | T/T |
Supply Ability: | 10,000 wafers/month |
Name: | Semi Insulating SIC Wafer | Grade: | Dummy Grade |
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Description: | 6H SEMI Substrate | Size: | 10mm X 10mm |
Keywords: | Single Crystal SiC Silicon Carbide Wafer | Application: | Optoelectronic Industry |
High Light: | 4h sic wafer,sic wafer |
6H Semi-Insulating SiC Substrate, Dummy Grade,10mm x 10mm
SiC crystal growth
Bulk crystal growth is the technique for fabrication of single crystalline substrates , making the base for further device processing.To have a breakthrough in SiC technology obviously we need production of SiC substrate with a reproducible process.6H- and 4H- SiC crystals are grown in graphite crucibles at high temperatures up to 2100—2500°C. The operating temperature in the crucible is provided either by inductive (RF) or resistive heating. The growth occurs on thin SiC seeds. The source represents polycrystalline SiC powder charge. The SiC vapor in the growth chamber mainly consists of three species, namely, Si, Si2C, and SiC2, which are diluted by carrier gas, for example, Argon. The SiC source evolution includes both time variation of porosity and granule diameter and graphitization of the powder granules.
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SILICON CARBIDE MATERIAL PROPERTIES
Polytype | Single Crystal 4H | Single Crystal 6H |
Lattice Parameters | a=3.076 Å | a=3.073 Å |
c=10.053 Å | c=15.117 Å | |
Stacking Sequence | ABCB | ABCACB |
Band-gap | 3.26 eV | 3.03 eV |
Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
Refraction Index | no = 2.719 | no = 2.707 |
ne = 2.777 | ne = 2.755 | |
Dielectric Constant | 9.6 | 9.66 |
Thermal Conductivity | 490 W/mK | 490 W/mK |
Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
Mohs Hardness | ~9 | ~9 |
PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide) wafer for electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available.
6H Semi-Insulating SiC Substrate, Dummy Grade,10mm x 10mm
SUBSTRATE PROPERTY | S6H-51-SI-PWAM-250 S6H-51-SI-PWAM-330 S6H-51-SI-PWAM-430 |
Description | Dummy Grade 6H SEMI Substrate |
Polytype | 6H |
Diameter | (50.8 ± 0.38) mm |
Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm |
Resistivity (RT) | >1E5 Ω·cm |
Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
FWHM | <50 arcsec |
Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 |
Surface Orientation | |
On axis <0001>± 0.5° | |
Off axis 3.5° toward <11-20>± 0.5° | |
Primary flat orientation | Parallel {1-100} ± 5° |
Primary flat length | 16.00 ± 1.70 mm |
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5° | |
C-face:90° ccw. from orientation flat ± 5° | |
Secondary flat length | 8.00 ± 1.70 mm |
Surface Finish | Single or double face polished |
Packaging | Single wafer box or multi wafer box |
Usable area | ≥ 90 % |
Edge exclusion | 1 mm |
SiC Insulators: Thermal Oxides and MOS Technology
The vast majority of semiconductor-integrated circuit chips in use today rely on silicon metal-oxide–
semiconductor field-effect transistors (MOSFETs), whose electronic advantages and operational
device physics are summarized in Katsumata’s chapter and elsewhere . Given the extreme
usefulness and success of inversion channel MOSFET-based electronics in VLSI silicon (as well as
discrete silicon power devices), it is naturally desirable to implement high-performance inversion
channel MOSFETs in SiC. Like silicon, SiC forms a thermal when it is sufficiently heated in an
oxygen environment. While this enables SiC MOS technology to somewhat follow the highly successful
path of silicon MOS technology, there are nevertheless important differences in insulator quality and
device processing that are presently preventing SiC MOSFETs from realizing their full beneficial
potential. While the following discourse attempts to quickly highlight key issues facing SiC MOSFET
development, more detailed insights can be found in References 133–142.
About Us
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After years of development, we have established perfect sales network and integrated after-sale service system at domestic and abroad, which enables the company to provide timely, accurate and efficient services, and won good customer reputations. The products are sold all over in China and exported to more than 30 countries and regions such as Europe, America, Southeast Asia, South America, Middle East and Africa. The production, sales volume and scale are all ranked first in the same industry.
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