 |
| Place of Origin: | China |
| Brand Name: | PAM-XIAMEN |
| Minimum Order Quantity: | 1-10,000pcs |
|---|---|
| Price: | By Case |
| Packaging Details: | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| Delivery Time: | 5-50 working days |
| Payment Terms: | T/T |
| Supply Ability: | 10,000 wafers/month |
| Dimension: | 10X10 Mm | Item: | PAM-T-GaN-10-U |
|---|---|---|---|
| Product Name: | 10*10mm2 Undoped GaN/Sapphire Substrates | Conduction Type: | N-type |
| Other Name: | GaN Wafer | Thickness: | 5 ±1 μm |
| Useable Area: | > 90% (edge And Macro Defects Exclusion) | Orientation Flat Of Sapphire: | (11-20) 0 ±0.2°, 16 ±1 Mm |
| High Light: | gallium nitride gan,gan wafer |
||
10*10mm2 Undoped Epigan On Sapphire Substrates For Gallium Nitride Devices
Here shows detail specification:
10*10mm2 Undoped GaN/Sapphire Substrates
| Item | PAM-T-GaN-10-U |
| Dimension | 10X10 mm |
| Thickness | 5 ±1 μm |
| Orientation of GaN | C plane (0001) off angle toward A-axis 0.2 ±0.1° |
| Orientation Flat of GaN | (1-100) 0 ±0.2°, 16 ±1 mm |
| Conduction Type | N-type |
| Resistivity (300K) | < 0.5 Ω·cm |
| Carrier Concentration | <5X1017CM-3 |
| Mobility | ~ 300cm2 / V·s |
| Dislocation Density | < 5x108cm-2(estimated by FWHMs of XRD) |
| Structure | 5 ±1 μm GaN/~ 50 nm uGaN buffer layer/430 ±25 μm sapphire |
| Orientation of Sapphire | C plane (0001) off angle toward M-axis 0.2 ±0.1° |
| Orientation Flat of Sapphire | (11-20) 0 ±0.2°, 16 ±1 mm |
| Surface Roughness: | Front side: Ra<0.5nm, epi-ready; Back side: etched or polished. |
| Useable Area | > 90% (edge and macro defects exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
10*10mm2 Undoped GaN/Sapphire Substrates
Testing Project: FWHM and XRD project
The half-height full width (FWHM) is an expression of the range of functions given by the difference between two extreme values of the independent variable equal to half of its maximum. In other words, it is the width of the spectral curve measured between those points on the Y-axis, which is half the maximum amplitude.
Below is an example of FWHM and XRD of AlN template:
FWHM and XRD of AlN template
FWHM and XRD of AlN template
Here we show experiment as an example:
Experiment on GaN on sapphire:Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition:
Experiment on GaN on sapphire:Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition:
All GaN film samples were deposited on different substrates by PLD at 1000 ◦C in a nitrogen plasma ambient atmosphere. The chamber was pumped down to 10−6 Torr before the deposition process began, and N2 gas (with a purity of 99.999%) was introduced. The working pressure once the N2 plasma was injected was 1.13 × 10−4 Torr. A KrF excimer laser (λ = 248 nm, Lambda Physik, Fort Lauderdale, FL, USA) was employed as the ablation source and operated with a repetition rate of 1 Hz and a pulse energy of 60 mJ. The average growth rate of the GaN film was approximately 1 µm/h. The laser beam was incident on a rotating target at an angle of 45◦ . The GaN target was fabricated by HVPE and set at a fixed distance of 9 cm from the substrate before being rotated at 30 rpm during film deposition. In this case, ~4 µm-thick GaN films were grown on a GaN/sapphire template (sample A), sapphire (sample B), Si(111) (sample C), and Si(100) (sample D). For the GaN on sample A, a 2-µm GaN layer was firstly deposited on sapphire substrate by MOCVD. Scanning electron microscopy (SEM, S-3000H, Hitachi, Tokyo, Japan), transmission electron microcopy (TEM, H-600, Hitachi, Tokyo, Japan), atomic force microscopy (AFM, DI-3100, Veeco, New York, NY, USA), double-crystal X-ray diffraction (XRD, X’Pert PRO MRD, PANalytical, Almelo, The Netherlands), low-temperature photoluminescence (PL, Flouromax-3, Horiba, Tokyo, Japan), and Raman spectroscopy (Jobin Yvon, Horiba, Tokyo, Japan) were employed to explore the microstructure and optical properties of the GaN templates deposited on different substrates. The electrical properties of the GaN films were determined by Van der Pauw-Hall measurement under liquid nitrogen cooling at 77 K
Conclusion: the GaN thick films grown on a GaN/sapphire template, sapphire, Si(111), and Si(100) by high-temperature PLD. The substrate effect on GaN crystalline growth quality, surface morphology, stress behavior, and interface property were studied, if you need more product information, please enquire us.
Service
7X24-hour Telephone Consulting Service is available.
Reply and solution will be provided in 8 hours upon customer’s service request.
After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.
Quality inspection from raw material to production, and delivery.
Professional quality control person, to avoid the unqualified products flowing to customer.
Strict inspection to Raw material, production, and delivery.
Full series of equipment in quality laboratory.
4 Inch Indium Phosphide Wafer P Type Test Grade InP Epi Ready Wafer
Single Crystal Indium Phosphide Wafer High Purity 4 Inch Prime Grade
Fe Doped InP Test Grade Wafer 4" Semi Insulating Optical Sensing Application
2 Inch Gallium Nitride Wafer Bulk GaN Substrates For LED HEMT Structure
2 Inch GaN Gallium Nitride Substrates Freestanding High Frequency Devices Use
2 Inch Bulk U Gallium Nitride Wafer Epi Ready Wafer For GaN Laser Diode
6H N Type SiC Wafer Dummy Grade C 0001 Bulk Crystal Growth <50 Arcsec FWHM
On Axis Sic Silicon Carbide Wafer 4 Deg Off 4H N Type Production Grade
Research Grade Silicon Carbide Wafer 6H SiC Semi Standard Wafer Cmp Polished
