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2 Inch Bulk U Gallium Nitride Wafer Epi Ready Wafer For GaN Laser Diode

2 Inch Bulk U Gallium Nitride Wafer Epi Ready Wafer For GaN Laser Diode

2 Inch Bulk U Gallium Nitride Wafer Epi Ready Wafer For GaN Laser Diode

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Price: By Case
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Dimension: 50.8 ±1 Mm Other Name: Gallium Nitride Substrate
Product Name: GaN Wafer Conduction Type: N-type,Semi-Insulating
Item: PAM-FS-GAN-50-U Thickness: 350 ±25 μm 430±25μm
High Light:

gan on silicon wafer


gan wafer

2 Inch Free Standing U-GaN Bulk GaN Substrates,Epi-Ready Grade For GaN Laser Diode


GaN is a very hard (12±2 GPa, mechanically stable wide bandgap semiconductor material with high heat capacity and thermal conductivity. In its pure form it resists cracking and can be deposited in thin film on sapphire or silicon carbide, despite the mismatch in their lattice constants. GaN can be doped with silicon (Si) or with oxygen to n-type and with magnesium (Mg) to p-type. However, the Si and Mg atoms change the way the GaN crystals grow, introducing tensile stresses and making them brittle.Galliumnitride compounds also tend to have a high dislocation density, on the order of 108 to 1010 defects per square centimeter. The wide band-gap behavior of GaN is connected to specific changes in the electronic band structure, charge occupation and chemical bond regions


2inch Freestanding U-GaN GaN Substrates


Item PAM-FS-GaN-50-U
Dimension 50.8 ±1 mm
Thickness 350 ±25 μm 430±25μm
Orientation C plane (0001) off angle toward M-axis 0.35 ±0.15°
Orientation Flat (1-100) 0 ±0.5°, 16 ±1 mm
Secondary Orientation Flat (11-20) 0 ±3°, 8 ±1 mm
Conduction Type


Resistivity (300K)

< 0.1 Ω·cm

TTV ≤ 15 μm
BOW -20 μm ≤ BOW ≤ 20 μm
Surface Roughness:

Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.

Dislocation Density From 1 x 105 to 5 x 10 6cm -2(calculated by CL)*
Macro Defect Density < 2 cm-2
Useable Area > 90% (edge and macro defects exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room


2inch Freestanding U-GaN GaN Substrates


PAM-XIAMEN's GaN(Gallium Nitride) substrate is singlecry stal substrate with high quality, which is made with original HVPE method and wafer processing technology. They are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green), Furthermore development has progressed for power and high frequency electronic device applications.


GaN technology is used in numerous high-power applications such as industrial, consumer and server power supplies, solar, AC drive and UPS inverters, and hybrid and electric cars. Furthermore, GaN is ideally suited for RF applications such as cellular base stations, radars and cable TV infrastructure in the networking, aerospace and defense sectors,thanks to its high breakdown strength, low noise figure and high linearity.


Surface Roughness-GaN material-TEST REPORT


Surface roughness is usually shortened to roughness and is a component of surface texture. It is quantified by the deviation of the normal vector direction of the real surface from its ideal form. If these deviations are large, the surface is rough; If they’re small, the surface is smooth. In surface measurement, roughness is generally considered to be the high frequency short-wave length component of measuring scale surface. In practice, however, it is often necessary to know the amplitude and frequency to ensure that the surface is suitable for a purpose.


Below is an example of surface roughness of GaN material:


2 Inch Bulk U Gallium Nitride Wafer Epi Ready Wafer For GaN Laser Diode


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