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| Place of Origin: | China |
| Brand Name: | PAM-XIAMEN |
| Minimum Order Quantity: | 1-10,000pcs |
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| Price: | By Case |
| Packaging Details: | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| Delivery Time: | 5-50 working days |
| Payment Terms: | T/T |
| Supply Ability: | 10,000 wafers/month |
| Thickness: | 350 ±25 μm 430±25μm | Item: | PAM-FS-GAN-50-N |
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| Conduction Type: | N-type | Product Name: | Gallium Nitride Substrate Wafer |
| Other Name: | GaN Wafer | Dimension: | 50.8 ±1 Mm |
| TTV: | < 0.05 Ω·cm | BOW: | -20 μm ≤ BOW ≤ 20 μm |
| High Light: | gallium nitride gan,gan on silicon wafer |
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2 Inch Freestanding N-GaN Bulk GaN Substrates For LED,LD Or HEMT Structure
2inch Freestanding N-GaN GaN Substrates
The growing demand for high-speed, high-temperature and high power-handling capabilities has made the semiconductor industry rethink the choice of materials used as semiconductors. For instance, as various faster and smaller computing devices arise, the use of silicon is making it difficult to sustain Moore’s Law. But also in power electronics, the properties of silicon are no longer sufficient to allow further improvements in conversion efficiency.
Here shows detail specification:
2inch Freestanding N-GaN GaN Substrates
| Item | PAM-FS-GaN-50-N |
| Dimension | 50.8 ±1 mm |
| Thickness | 350 ±25 μm 430±25μm |
| Orientation | C plane (0001) off angle toward M-axis 0.35 ±0.15° |
| Orientation Flat | (1-100) 0 ±0.5°, 16 ±1 mm |
| Secondary Orientation Flat | (11-20) 0 ±3°, 8 ±1 mm |
| Conduction Type | N-type |
| Resistivity (300K) |
>106 Ω·cm |
| TTV | < 0.05 Ω·cm |
| BOW | -20 μm ≤ BOW ≤ 20 μm |
| Surface Roughness: |
Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. |
| Dislocation Density | From 1 x 105 to 5 x 10 6cm -2(calculated by CL)* |
| Macro Defect Density | < 2 cm-2 |
| Useable Area | > 90% (edge and macro defects exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
Transmitance-GaN material-TEST REPORT
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing equipment,micropipe density by polarizing microscope, orientation by X-ray Orientator etc. if the wafers meet the requirement, we will clean and pack them in 100 class clean room, if the wafers do not match the custom spec, we will take it off.
The transmittance of the wafer surface is the effectiveness of its transmission of radiative energy. Compared with the transmission coefficient, it is the fraction of the incident electromagnetic power transmitted through the sample, and the transmission coefficient is the ratio of the transmitted electric field to the incident electric field.
Service
7X24-hour Telephone Consulting Service is available.
Reply and solution will be provided in 8 hours upon customer’s service request.
After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.
Quality inspection from raw material to production, and delivery.
Professional quality control person, to avoid the unqualified products flowing to customer.
Strict inspection to Raw material, production, and delivery.
Full series of equipment in quality laboratory.
Transmitance of GaN material
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