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| Place of Origin: | China |
| Brand Name: | PAM-XIAMEN |
| Minimum Order Quantity: | 1-10,000pcs |
|---|---|
| Price: | By Case |
| Packaging Details: | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| Delivery Time: | 5-50 working days |
| Payment Terms: | T/T |
| Supply Ability: | 10,000 wafers/month |
| Other Name: | GaN Wafer | Product Name: | Freestanding GaN Substrate |
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| Dimension: | 10 X 10.5 Mm2 | Item: | PAM-FS-GAN-50-U |
| Conduction Type: | N-type | Thickness: | 350 ±25 µm 430±25 µm |
| Resistivity (300K): | < 0.1 Ω·cm | TTV: | ≤ 10 µm |
| High Light: | gallium nitride gan,gan wafer |
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10*10mm2 U-GaN Free-Standing GaN Single-Crystal Substrate
10*10mm2 U-GaN Freestanding GaN Substrate
PAM-XIAMEN's GaN(Gallium Nitride) substrate is singlecrystal substrate with high quality, which is made with original HVPE method and wafer processing technology. They are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green), Furthermore development has progressed for power and high frequency electronic device applications.
GaN technology is used in numerous high-power applications such as industrial, consumer and server power supplies, solar, AC drive and UPS inverters, and hybrid and electric cars. Furthermore, GaN is ideally suited for RF applications such as cellular base stations, radars and cable TV infrastructure in the networking, aerospace and defense sectors,thanks to its high breakdown strength, low noise figure and high linearity.
Here shows detail specification:
10*10mm2 U-GaN Freestanding GaN Substrate
| Item | PAM-FS-GaN-50-U |
| Dimension | 10 x 10.5 mm2 |
| Thickness | 350 ±25 µm 430±25 µm |
| Orientation | C plane (0001) off angle toward M-axis 0.35 ±0.15° |
| Conduction Type | N-type |
| Resistivity (300K) | < 0.1 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness: |
Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. |
| Dislocation Density | From 1 x 105 to 5x 106 cm-2 (calculated by CL)* |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
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Package |
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
XRD Rocking Curves-GaN Material-TEST REPORT
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing equipment,micropipe density by polarizing microscope, orientation by X-ray Orientator etc. if the wafers meet the requirement, we will clean and pack them in 100 class clean room, if the wafers do not match the custom spec, we will take it off.
Below is an example of XRD Rocking Curves of GaN Material:
XRD Rocking Curves of GaN Material
About Us
Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.
We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.
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