|Place of Origin:||China|
|Minimum Order Quantity:||1-10,000pcs|
|Packaging Details:||Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere|
|Delivery Time:||5-50 working days|
|Supply Ability:||10,000 wafers/month|
|Keyword:||InP Wafer||Wafer Diamter:||3 Inch|
|Conduction Type:||Semi Insulating||Product Name:||Indium Phosphide Wafer|
|TTV:||<12um||Laser Marking:||Upon Request|
Semi-Insulating ,InP ( Indium Phosphide) Crystal Wafer , 3”, Dummy Grade
Semi-Insulating, InP Wafer, 3”, Dummy Grade
|3"InP Wafer Specification|
|Primary Flat Length||16±2mm|
|Secondary Flat Length||8±1mm|
|Laser Marking||upon request|
|Suface Finish||P/E, P/P|
|Package||Single wafer container or cassette|
PAM-XIAMEN offers InP wafer – Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic (“zinc blende”) crystal structure, identical to that of GaAs and most of the III-V semiconductors.Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide[clarification needed] at 400 °C., also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphide. InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
Indium Phosphide (InP) is used to produce efficient lasers, sensitive photodetectors and modulators in the wavelength window typically used for telecommunications, i.e., 1550 nm wavelengths, as it is a direct bandgap III-V compound semiconductor material. The wavelength between about 1510 nm and 1600 nm has the lowest attenuation available on optical fibre (about 0.26 dB/km). InP is a commonly used material for the generation of laser signals and the detection and conversion of those signals back to electronic form. Wafer diameters range from 2-4 inches.
• Company networks and data center
• Fibre to the home
• Connections to wireless 3G, LTE and 5G base stations
• Free space satellite communication
|Breakdown field||≈5·105 V cm-1|
|Mobility electrons||≤5400 cm2V-1s-1|
|Mobility holes||≤200 cm2 V-1s-1|
|Diffusion coefficient electrons||≤130 cm2 s-1|
|Diffusion coefficient holes||≤5 cm2 s-1|
|Electron thermal velocity||3.9·105 m s-1|
|Hole thermal velocity||1.7·105 m s-1|
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