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Iron Doped Indium Phosphide Wafer Prime Grade 4 Inch Wafer

Iron Doped Indium Phosphide Wafer Prime Grade 4 Inch Wafer

Iron Doped Indium Phosphide Wafer Prime Grade 4 Inch Wafer

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Laser Marking: Upon Request Conduction Type: Semi Insulating
Product Name: Indium Phosphide Substrate Wafer Application: 600±25um
Wafer Diamter: 4 Inch Keyword: Single Crystal Indium Phosphide Wafer
Suface Finish: P/E, P/P Grade: Prime Grade

Semi-Insulating , Iron-Doped Indium Phosphide Substrate , 4”, Prime Grade
 
Semi-Insulating, Indium Phosphide Substrate, 4”, Prime Grade

4"InP Wafer Specification   
ItemSpecifications
Conduction TypeSI-type
DopantIron
Wafer Diameter4"
Wafer Orientation100±0.5°
Wafer Thickness600±25um
Primary Flat Length16±2mm
Secondary Flat Length8±1mm
Carrier Concentration≤3x1016cm-3(0.8-6)x1018cm-3(0.6-6)x1018cm-3N/A
Mobility(3.5-4)x103cm2/V.s(1.5-3.5)x103cm2/V.s50-70cm2/V.s>1000cm2/V.s
ResistivityN/AN/AN/A>0.5x107Ω.cm
EPD<1000cm-2<1x103cm-2<1x103cm-2<5x103cm-2
TTV<15um
BOW<15um
WARP<15um
Laser Markingupon request
Suface FinishP/E, P/P
Epi Readyyes
PackageSingle wafer container or cassette
 

What is InP wafer?
 

Indium phosphide is a semiconducting material similar to GaAs and silicon but is very much a niche product. It’s very effective at developing very high-speed processing and is more expensive than GaAs because of the great lengths to gather and develop the ingredients. Let’s take a look at some more facts about indium phosphide as it pertains to an InP Wafer.

Optical Sensing application

Spectroscopic Sensing aiming environmental protection and identification of dangerous substances
• A growing field is sensing based on the wavelength regime of InP. One example for Gas Spectroscopy is drive test equipment with real-time measurement of (CO, CO2, NOX [or NO + NO2]).
• Quick verification of traces of toxic substances in gases and liquids (including tap water) or surface contaminations down to the ppb level.
• Spectroscopy for non-destructive product control of e.g. food (early detection of spoiled foodstuff)
• Spectroscopy for many novel applications, especially in air pollution control are being discussed today and implementations are on the way.

 

Iron Doped Indium Phosphide Wafer Prime Grade 4 Inch WaferElectron Hall mobility versus temperature for different doping levels.
Bottom curve - no=Nd-Na=8·1017 cm-3;
Middle curve - no=2·1015 cm-3;
Top curve - no=3·1013 cm-3.
(Razeghi et al. [1988]) and (Walukiewicz et al [1980]).
Iron Doped Indium Phosphide Wafer Prime Grade 4 Inch WaferElectron Hall mobility versus temperature (high temperatures):
Bottom curve - no=Nd-Na~3·1017 cm-3;
Middle curve - no~1.5·1016 cm-3;
Top curve - no~3·1015 cm-3.
(Galavanov and Siukaev[1970]).

For weakly doped n-InP at temperatures close to 300 K electron drift mobility:

µn = (4.2÷5.4)·103·(300/T) (cm2V-1 s-1)

Iron Doped Indium Phosphide Wafer Prime Grade 4 Inch WaferHall mobility versus electron concentration for different compensation ratios.
θ = Na/Nd, 77 K.
Dashed curves are theoretical calculations: 1. θ = 0; 2. θ = 0.2; 3. θ = 0.4; 4. θ = 0.6; 5. θ = 0.8;
(Walukiewicz et al. [1980]).
Solid line is mean observed values (Anderson et al. [1985]).
Iron Doped Indium Phosphide Wafer Prime Grade 4 Inch WaferHall mobility versus electron concentration for different compensation ratios
θ =Na/Nd, 300 K.
Dashed curves are theoretical calculations: 1. θ = 0; 2. θ = 0.2; 3. θ = 0.4; 4. θ = 0.6; 5. θ = 0.8;
(Walukiewicz et al. [1980]).
Solid line is mean observed values (Anderson et al. [1985]).

Approximate formula for electron Hall mobility

µ=µOH/[1+(Nd/107)1/2],
where µOH=5000 cm2V-1 s-1,
Nd- in cm-3 (Hilsum [1974])
At 300 K, the electron Hall factor rn≈1 in n-InP.
for Nd > 1015 cm-3.

Iron Doped Indium Phosphide Wafer Prime Grade 4 Inch WaferHole Hall mobility versus temperature for different doping (Zn) levels.
Hole concentration at 300 K: 1. 1.75·1018 cm-3; 2. 3.6·1017 cm-3; 3. 4.4·1016 cm-3.
θ=Na/Nd~0.1.
(Kohanyuk et al. [1988]).

For weakly doped p-InP at temperature close to 300 K the Hall mobility

µpH~150·(300/T)2.2 (cm2V-1 s-1).

Iron Doped Indium Phosphide Wafer Prime Grade 4 Inch WaferHole Hall mobility versus hole density, 300 K (Wiley [1975]).
The approximate formula for hole Hall mobility:
µp=µpo/[1 + (Na/2·1017)1/2], where µpo~150 cm2V-1 s-1, Na- in cm-3

At 300 K, the hole factor in pure p-InP: rp~1
 
PAM-XIAMEN manufactures high purity single crystal Indium Phosphide Wafers for optoelectronics applications. Our standard wafer diameters range from 25.4 mm (1 inch) to 200 mm (6 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, technical grade, and optical grade. PAM-XIAMEN also offer materials to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.
 
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