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Fe Doped InP Test Grade Wafer 4" Semi Insulating Optical Sensing Application

Fe Doped InP Test Grade Wafer 4" Semi Insulating Optical Sensing Application

Fe Doped InP Test Grade Wafer 4" Semi Insulating Optical Sensing Application

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: Single Crystal Indium Phosphide Wafer Wafer Diamter: 4 Inch
Conduction Type: Semi Insulating Grade: Test Grade
Keyword: InP Wafer Application: 600±25um
TTV: <15um BOW: <15um

Semi-Insulating ,Fe-Doped Indium Phosphide Substrate , 4”, Test Grade
 
Semi-Insulating, Indium Phosphide Substrate, 4”, Test Grade

4"InP Wafer Specification      
Item Specifications
Conduction Type SI-type
Dopant Iron
Wafer Diameter 4"
Wafer Orientation 100±0.5°
Wafer Thickness 600±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration ≤3x1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N/A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70cm2/V.s >1000cm2/V.s
Resistivity N/A N/A N/A >0.5x107Ω.cm
EPD <1000cm-2 <1x103cm-2 <1x103cm-2 <5x103cm-2
TTV <15um
BOW <15um
WARP <15um
Laser Marking upon request
Suface Finish P/E, P/P
Epi Ready yes
Package Single wafer container or cassette
 


PAM-XIAMEN manufactures high purity single crystal Indium Phosphide Wafers for optoelectronics applications. Our standard wafer diameters range from 25.4 mm (1 inch) to 200 mm (6 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, technical grade, and optical grade. PAM-XIAMEN also offer materials to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.

 

Optical Sensing application

Spectroscopic Sensing aiming environmental protection and identification of dangerous substances
• A growing field is sensing based on the wavelength regime of InP. One example for Gas Spectroscopy is drive test equipment with real-time measurement of (CO, CO2, NOX [or NO + NO2]).
• Quick verification of traces of toxic substances in gases and liquids (including tap water) or surface contaminations down to the ppb level.
• Spectroscopy for non-destructive product control of e.g. food (early detection of spoiled foodstuff)
• Spectroscopy for many novel applications, especially in air pollution control are being discussed today and implementations are on the way.

 

Fe Doped InP Test Grade Wafer 4" Semi Insulating Optical Sensing Application Electron Hall mobility versus temperature for different doping levels.
Bottom curve - no=Nd-Na=8·1017 cm-3;
Middle curve - no=2·1015 cm-3;
Top curve - no=3·1013 cm-3.
(Razeghi et al. [1988]) and (Walukiewicz et al [1980]).
Fe Doped InP Test Grade Wafer 4" Semi Insulating Optical Sensing Application Electron Hall mobility versus temperature (high temperatures):
Bottom curve - no=Nd-Na~3·1017 cm-3;
Middle curve - no~1.5·1016 cm-3;
Top curve - no~3·1015 cm-3.
(Galavanov and Siukaev[1970]).

For weakly doped n-InP at temperatures close to 300 K electron drift mobility:

µn = (4.2÷5.4)·103·(300/T) (cm2V-1 s-1)

Fe Doped InP Test Grade Wafer 4" Semi Insulating Optical Sensing Application Hall mobility versus electron concentration for different compensation ratios.
θ = Na/Nd, 77 K.
Dashed curves are theoretical calculations: 1. θ = 0; 2. θ = 0.2; 3. θ = 0.4; 4. θ = 0.6; 5. θ = 0.8;
(Walukiewicz et al. [1980]).
Solid line is mean observed values (Anderson et al. [1985]).
Fe Doped InP Test Grade Wafer 4" Semi Insulating Optical Sensing Application Hall mobility versus electron concentration for different compensation ratios
θ =Na/Nd, 300 K.
Dashed curves are theoretical calculations: 1. θ = 0; 2. θ = 0.2; 3. θ = 0.4; 4. θ = 0.6; 5. θ = 0.8;
(Walukiewicz et al. [1980]).
Solid line is mean observed values (Anderson et al. [1985]).

Approximate formula for electron Hall mobility

µ=µOH/[1+(Nd/107)1/2],
where µOH=5000 cm2V-1 s-1,
Nd- in cm-3 (Hilsum [1974])
At 300 K, the electron Hall factor rn≈1 in n-InP.
for Nd > 1015 cm-3.

Fe Doped InP Test Grade Wafer 4" Semi Insulating Optical Sensing Application Hole Hall mobility versus temperature for different doping (Zn) levels.
Hole concentration at 300 K: 1. 1.75·1018 cm-3; 2. 3.6·1017 cm-3; 3. 4.4·1016 cm-3.
θ=Na/Nd~0.1.
(Kohanyuk et al. [1988]).

For weakly doped p-InP at temperature close to 300 K the Hall mobility

µpH~150·(300/T)2.2 (cm2V-1 s-1).

Fe Doped InP Test Grade Wafer 4" Semi Insulating Optical Sensing Application Hole Hall mobility versus hole density, 300 K (Wiley [1975]).
The approximate formula for hole Hall mobility:
µp=µpo/[1 + (Na/2·1017)1/2], where µpo~150 cm2V-1 s-1, Na- in cm-3

At 300 K, the hole factor in pure p-InP: rp~1

 

Are You Looking for an InP Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including InP wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

 

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