|Place of Origin:||China|
|Minimum Order Quantity:||1-10,000pcs|
|Packaging Details:||Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere|
|Delivery Time:||5-50 working days|
|Supply Ability:||10,000 wafers/month|
|Product Name:||Indium Phosphide Wafer||Wafer Diamter:||3 Inch|
|Conduction Type:||P Type||Grade:||Dummy Grade|
|Wafer Thickness:||350±25um||Keyword:||InP Substrate Wafer|
|Wafer Orientation:||100±0.5°||Secondary Flat Length:||8±1mm|
P Type , InP( Indium Phosphide) Substrate , 3”, Dummy Grade
Please contact our engineer team for more wafer information.
P Type, InP Substrate, 3”, Dummy Grade
|3"InP Wafer Specification|
|Primary Flat Length||16±2mm|
|Secondary Flat Length||8±1mm|
|Laser Marking||upon request|
|Suface Finish||P/E, P/P|
|Package||Single wafer container or cassette|
PAM-XIAMEN provides single crystal InP(Indium phosphide) wafer for micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 6 inch. Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InP wafer is an important semiconductor material which have superior electrical and thermal properties, InP wafer has higher electron mobility, higher frequency, low power consumption , higher thermal conductivity and low noise performance . PAM-XIAMEN can provide epi ready grade InP wafer for your MOCVD & MBE epitaxial application .
|Breakdown field||≈5·105 V cm-1|
|Mobility electrons||≤5400 cm2V-1s-1|
|Mobility holes||≤200 cm2 V-1s-1|
|Diffusion coefficient electrons||≤130 cm2 s-1|
|Diffusion coefficient holes||≤5 cm2 s-1|
|Electron thermal velocity||3.9·105 m s-1|
|Hole thermal velocity||1.7·105 m s-1|
It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. The company Infinera uses indium phosphide as its major technological material for manufacturing photonic integrated circuits for the optical telecommunications industry, to enable wavelength-division multiplexing applications.
InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
PAM-XIAMEN is your go-to place for everything wafers, including InP wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!
We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.