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Single Crystal Indium Phosphide Wafer High Purity 4 Inch Prime Grade

Single Crystal Indium Phosphide Wafer High Purity 4 Inch Prime Grade

Single Crystal Indium Phosphide Wafer High Purity 4 Inch Prime Grade

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: Indium Phosphide InP Wafer Wafer Diamter: 4 Inch
Conduction Type: P Type Grade: Prime Grade
Wafer Thickness: 350±25um Primary Flat Length: 16±2mm
Secondary Flat Length: 8±1mm Keyword: Single Crystal Indium Phosphide Wafers

P Type , High Purity Single Crystal Indium Phosphide Wafer , 4”, Prime Grade

 

What is InP wafer?

Indium phosphide is a semiconducting material similar to GaAs and silicon but is very much a niche product. It’s very effective at developing very high-speed processing and is more expensive than GaAs because of the great lengths to gather and develop the ingredients. Let’s take a look at some more facts about indium phosphide as it pertains to an InP Wafer.

P Type, Indium Phosphide Wafer, 4”, Prime Grade

4"InP Wafer Specification      
Item Specifications
Conduction Type P-type
Dopant Zinc
Wafer Diameter 4"
Wafer Orientation 100±0.5°
Wafer Thickness 600±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration ≤3x1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N/A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70cm2/V.s >1000cm2/V.s
Resistivity N/A N/A N/A >0.5x107Ω.cm
EPD <1000cm-2 <1x103cm-2 <1x103cm-2 <5x103cm-2
TTV <15um
BOW <15um
WARP <15um
Laser Marking upon request
Suface Finish P/E, P/P
Epi Ready yes
Package Single wafer container or cassette
 

 

Transport Properties in High Electric Fields

Single Crystal Indium Phosphide Wafer High Purity 4 Inch Prime Grade Field dependences of the electron drift velocity in InP, 300 K.
Solid curve are theoretical calculation.
Dashed and dotted curve are measured data.
(Maloney and Frey [1977]) and (Gonzalez Sanchez et al. [1992]).
Single Crystal Indium Phosphide Wafer High Purity 4 Inch Prime Grade The field dependences of the electron drift velocity for high electric fields.
T(K): 1. 95; 2. 300; 3. 400.
(Windhorn et al. [1983]).
Single Crystal Indium Phosphide Wafer High Purity 4 Inch Prime Grade Field dependences of the electron drift velocity at different temperatures.
Curve 1 -77 K (Gonzalez Sanchez et al. [1992]).
Curve 2 - 300 K, Curve 3 - 500 K (Fawcett and Hill [1975]).
Single Crystal Indium Phosphide Wafer High Purity 4 Inch Prime Grade Electron temperature versus electric field for 77 K and 300 K.
(Maloney and Frey [1977])
Single Crystal Indium Phosphide Wafer High Purity 4 Inch Prime Grade Fraction of electrons in L and X valleys nL/no and nX/no as a function of electric field, 300 K.
(Borodovskii and Osadchii [1987]).
Single Crystal Indium Phosphide Wafer High Purity 4 Inch Prime Grade Frequency dependence of the efficiency η at first (solid line) and at the second (dashed line) harmonic in LSA mode.
Monte Carlo simulation.
F = Fo + F1·sin(2π·ft) + F2·[sin(4π·ft)+3π/2],
Fo=F1=35 kV cm-1,
F2=10.5 kV cm-1
(Borodovskii and Osadchii [1987]).
Single Crystal Indium Phosphide Wafer High Purity 4 Inch Prime Grade Longitudinal (D || F) and transverse (D ⊥ F) electron diffusion coefficients at 300 K.
Ensemble Monte Carlo simulation.
(Aishima and Fukushima [1983]).
Single Crystal Indium Phosphide Wafer High Purity 4 Inch Prime Grade Longitudinal (D || F) and transverse (D ⊥ F) electron diffusion coefficients at 77K.
Ensemble Monte Carlo simulation.
(Aishima and Fukushima [1983]).

Optoelectronic Applications

InP based lasers and LEDs can emit light in the very broad range of 1200 nm up to 12 µm. This light is used for fibre based Telecom and Datacom applications in all areas of the digitalised world. Light is also used for sensing applications. On one hand there are spectroscopic applications, where a certain wavelength is needed to interact with matter to detect highly diluted gases for example. Optoelectronic terahertz is used in ultra-sensitive spectroscopic analysers, thickness measurements of polymers and for the detection of multilayer coatings in the automotive industry. On the other hand there is a huge benefit of specific InP lasers because they are eye safe. The radiation is absorbed in the vitreous body of the human eye and cannot harm the retina. InP lasers in LiDAR (Light Detection And Ranging) will be a key component for the mobility of the future and the automation industry.

Are You Looking for an InP Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including InP wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

 

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We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.

 

 

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