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4 Inch Indium Phosphide Wafer P Type Test Grade InP Epi Ready Wafer

4 Inch Indium Phosphide Wafer P Type Test Grade InP Epi Ready Wafer

4 Inch Indium Phosphide Wafer P Type Test Grade InP Epi Ready Wafer

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Keyword: InP Indium Phosphide Wafer Product Name: P Type InP Wafer
Conduction Type: P Type Wafer Diamter: 4”
Wafer Thickness: 350±25um Grade: Test Grade
Primary Flat Length: 16±2mm WARP: <15um

P Type , Indium Phosphide Wafer , 4”, Test Grade -InP Wafer Manufacturing
 
Please contact our engineer team for more wafer information.
P Type, Indium Phosphide Wafer, 4”, Test Grade

4"InP Wafer Specification      
Item Specifications
Conduction Type P-type
Dopant Zinc
Wafer Diameter 4"
Wafer Orientation 100±0.5°
Wafer Thickness 600±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration ≤3x1016cm-3 (0.8-6)x1018cm-3 (0.6-6)x1018cm-3 N/A
Mobility (3.5-4)x103cm2/V.s (1.5-3.5)x103cm2/V.s 50-70cm2/V.s >1000cm2/V.s
Resistivity N/A N/A N/A >0.5x107Ω.cm
EPD <1000cm-2 <1x103cm-2 <1x103cm-2 <5x103cm-2
TTV <15um
BOW <15um
WARP <15um
Laser Marking upon request
Suface Finish P/E, P/P
Epi Ready yes
Package Single wafer container or cassette
 

Indium Phosphide Facts

  • Molecular weight: 145.792 g/mol
  • Melting point: 1062 °C (1943.6 °F)
  • It can be used for virtually any electronic device that requires high speed or high power.
  • It has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.
  • InP is the most important material for the generation of laser signals and the detection and conversion of those signals back to electronic form.
  • Indium phosphide (InP) includes phosphorus and indium and is a binary semiconductor.
  • It has a zincblende crystal structure similar to GaAs and almost all the III-V semiconductors.
4 Inch Indium Phosphide Wafer P Type Test Grade InP Epi Ready Wafer Field dependences of the electron drift velocity in InP, 300 K.
Solid curve are theoretical calculation.
Dashed and dotted curve are measured data.
(Maloney and Frey [1977]) and (Gonzalez Sanchez et al. [1992]).
4 Inch Indium Phosphide Wafer P Type Test Grade InP Epi Ready Wafer The field dependences of the electron drift velocity for high electric fields.
T(K): 1. 95; 2. 300; 3. 400.
(Windhorn et al. [1983]).
4 Inch Indium Phosphide Wafer P Type Test Grade InP Epi Ready Wafer Field dependences of the electron drift velocity at different temperatures.
Curve 1 -77 K (Gonzalez Sanchez et al. [1992]).
Curve 2 - 300 K, Curve 3 - 500 K (Fawcett and Hill [1975]).
4 Inch Indium Phosphide Wafer P Type Test Grade InP Epi Ready Wafer Electron temperature versus electric field for 77 K and 300 K.
(Maloney and Frey [1977])
4 Inch Indium Phosphide Wafer P Type Test Grade InP Epi Ready Wafer Fraction of electrons in L and X valleys nL/no and nX/no as a function of electric field, 300 K.
(Borodovskii and Osadchii [1987]).
4 Inch Indium Phosphide Wafer P Type Test Grade InP Epi Ready Wafer Frequency dependence of the efficiency η at first (solid line) and at the second (dashed line) harmonic in LSA mode.
Monte Carlo simulation.
F = Fo + F1·sin(2π·ft) + F2·[sin(4π·ft)+3π/2],
Fo=F1=35 kV cm-1,
F2=10.5 kV cm-1
(Borodovskii and Osadchii [1987]).
4 Inch Indium Phosphide Wafer P Type Test Grade InP Epi Ready Wafer Longitudinal (D || F) and transverse (D ⊥ F) electron diffusion coefficients at 300 K.
Ensemble Monte Carlo simulation.
(Aishima and Fukushima [1983]).
4 Inch Indium Phosphide Wafer P Type Test Grade InP Epi Ready Wafer Longitudinal (D || F) and transverse (D ⊥ F) electron diffusion coefficients at 77K.
Ensemble Monte Carlo simulation.
(Aishima and Fukushima [1983]).
 

Applications are:

 

• Connections to wireless 3G, LTE and 5G base stations
• Free space satellite communication
• Long-haul optical fibre connections over great distance up to 5000 km typically >10 Tbit/s
• Metro ring access networks

 

Telecom/Datacom Application

Indium Phosphide (InP) is used to produce efficient lasers, sensitive photodetectors and modulators in the wavelength window typically used for telecommunications, i.e., 1550 nm wavelengths, as it is a direct bandgap III-V compound semiconductor material. The wavelength between about 1510 nm and 1600 nm has the lowest attenuation available on optical fibre (about 0.26 dB/km). InP is a commonly used material for the generation of laser signals and the detection and conversion of those signals back to electronic form. Wafer diameters range from 2-4 inches.

 

Service

 

7X24-hour Telephone Consulting Service is available.

Reply and solution will be provided in 8 hours upon customer’s service request.

After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.

 

Quality inspection from raw material to production, and delivery.

Professional quality control person, to avoid the unqualified products flowing to customer.

Strict inspection to Raw material, production, and delivery.

Full series of equipment in quality laboratory.

 

 

Contact Details
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