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Semiconductor CdZnTe Wafer For Diodes Transistors Opitical Components

Semiconductor CdZnTe Wafer For Diodes Transistors Opitical Components

Semiconductor CdZnTe Wafer For Diodes Transistors Opitical Components

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Price: By Case
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Growth Method: VGF Wafer Diamter: 2, 3,4 & 6
Thickness: 200~550 Dopant: Gallium Or Antimony
OF: EJ Or US Conduction Type: N-type, P Type, Undoped
Electronic Grade: Used For Diodes And Transistors Laser Marking: Upon Request

Semiconductor CdZnTe Substrate Used For Diodes And Transistors, Ir Optical Window Or Disks, Opitical Components

Product Description

Single crystal (Ge)Germanium Wafer

PAM-XIAMENoffers semiconductor materials,Ge(Germanium) Single Crystals and Wafers grown by VGF / LEC

 

Application:

 

Germanium blank or window are used in night vision and thermographic imaging solutions for commercial security, fire fighting and industrial monitoring equipment. Also, they are used as filters for analytical and measuring equipment, windows for remote temperature measurement, and mirrors for lasers.

Thin Germanium substrates are used in III-V triple-junction solar cells and for power Concentrated PV (CPV) systems.

 

General Properties of Germanium Wafer

General Properties Structure Cubic, a = 5.6754 Å
Density: 5.765 g/cm3
Melting Point: 937.4 oC
Thermal Conductivity: 640
Crystal Growth Technology Czochralski
Doping available Undoped Sb Doping Doping In or Ga
Conductive Type / N P
Resistivity, ohm.cm >35 < 0.05 0.05 – 0.1
EPD < 5×103/cm2 < 5×103/cm2 < 5×103/cm2
< 5×102/cm2 < 5×102/cm2 < 5×102/cm2

 

Grades and Application of Germanium wafer

Electronic Grade Used for diodes and transistors,
Infrared or opitical Grade Used for IR optical window or disks,opitical components
Cell Grade Used for substrates of solar cell

Standard Specs of Germanium Crystal and wafer

Crystal Orientation <111>,<100> and <110> ± 0.5o or custom orientation
Crystal boule as grown 1″ ~ 6″ diameter x 200 mm Length
Standard blank as cut 1″x 0.5mm 2″x0.6mm 4″x0.7mm 5″&6″x0.8mm
Standard Polished wafer(One/two sides polished) 1″x 0.30 mm 2″x0.5mm 4″x0.5mm 5″&6″x0.6mm

Special size and orientation are available upon requested Wafers

Specification of Germanium Wafer

Item Specifications Remarks
Growth Method VGF  
Conduction Type n-type, p type, undoped  
Dopant Gallium or Antimony  
Wafer Diamter 2, 3,4 & 6 inch
Crystal Orientation (100),(111),(110)  
Thickness 200~550 um
OF EJ or US  
Carrier Concentration request upon customers  
Resistivity at RT (0.001~80) Ohm.cm
Etch Pit Density <5000 /cm2
Laser Marking upon request  
Surface Finish P/E or P/P  
Epi ready Yes  
Package Single wafer container or cassette  
4 inch Ge wafer Specification for Solar Cells
Doping P  
Doping substances Ge-Ga  
Diameter 100±0.25 mm  
Orientation (100) 9° off toward <111>+/-0.5
Off-orientation tilt angle N/A  
Primary Flat Orientation N/A  
Primary Flat Length 32±1 mm
Secondary Flat Orientation N/A  
Secondary Flat Length N/A mm
cc (0.26-2.24)E18 /c.c
Resistivity (0.74-2.81)E-2 ohm.cm
Electron Mobility 382-865 cm2/v.s.
EPD <300 /cm2
Laser Mark N/A  
Thickness 175±10 μm
TTV <15 μm
TIR N/A μm
BOW <10 μm
Warp <10 μm
Front face Polished  
Back face Ground  

 

Service

 

7X24-hour Telephone Consulting Service is available.

Reply and solution will be provided in 8 hours upon customer’s service request.

After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.

 

Quality inspection from raw material to production, and delivery.

Professional quality control person, to avoid the unqualified products flowing to customer.

Strict inspection to Raw material, production, and delivery.

Full series of equipment in quality laboratory.

 

Germanium Wafer Process

In the germanium wafer production process, germanium dioxide from the residue processing is further purified in chlorination and hydrolysis steps.

1 ) High purity germanium is obtained during zone refining.

2) A germanium crystal is produced via the Czochralski process.

3) The germanium wafer is manufactured via several cutting, grinding, and etching steps.

4) The wafers are cleaned and inspection. During this process, the wafers are single side polished or double side polished according to custom requirement, epi-ready wafer comes.

5) The wafers are packed in single wafer containers, under a nitrogen atmosphere.

 

About Us

 

Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.

 

We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.

Contact Details
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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