|Place of Origin:||China|
|Minimum Order Quantity:||1-10,000pcs|
|Delivery Time:||5-50 working days|
|Supply Ability:||10,000 wafers/month|
|Product Name:||6" Silicon Epitaxial Wafer||Resistivity:||0.008-0.025Ωcm|
|Epi Layer Thickness:||10-15μm||Size:||6"|
float zone wafer,
epitaxial silicon wafer
6" Silicon Epitaxial Wafer Substrate Thickness 290±20µm / Resistivity 0.008-0.025Ωcm , Epi Layer Thickness 10-15μm
6" Silicon Epitaxial Wafer Substrate Thickness 290±20µm / Resistivity 0.008-0.025Ωcm, Epi Layer Thickness 10-15μm / Resistivity 10-16Ωcm
|6" Silicon Epitaxial Wafer|
|diameter||6" (150 +-0,5 mm)|
|Surface||Single Side Polished|
|Primary flat length||57.5mm+/-2.5mm|
|Primary flat||<110> +/- 1|
|Secondary Flat||No Secondary Flat|
|Resistivity||0.008-0.025 ohm cm|
|Thickness||290±20 um (Without Backlapping Introduced)|
|Resistivity||10-16 ohm cm|
|1. The deviation of the central resistivity value of the epitaxial layer ≤±5%
2. The resistivity uniformity of the epitaxial layer is ≤±3%
3. The deviation of the thickness center value of the epitaxial layer is ≤±5%
4. Thickness uniformity of the epitaxial layer ≤±3%
5. Stacking dislocation density 10/cm2
6. Total length does not exceed the wafer radius
7. Haze, Scratch, Pit, Orange peel, Crack, Edge breakage/ chipping, Impurity, Back stain NONE
8. Coronal margin, surface elevation not exceeding 1/3 of epitaxial thickness
9. Point defect SEMI standard: Particle@>0.3μm, <20 counts
What is silicon epitaxial wafer?
Silicon epi wafers were first developed around 1966, and achieved commercial acceptance by the early 1980s. Methods for growing the epitaxial layer on monocrystalline silicon or other wafers include: various types of chemical vapor deposition (CVD) classified as Atmospheric pressure CVD (APCVD) or metal organic chemical vapor deposition (MOCVD), as well as molecular beam epitaxy (MBE). Two "kerfless" methods (without abrasive sawing) for separating the epitaxial layer from the substrate are called "implant-cleave" and "stress liftoff". A method applicable when the epi-layer and substrate are the same material employs ion implantation to deposit a thin layer of crystal impurity atoms and resulting mechanical stress at the precise depth of the intended epi layer thickness. The induced localized stress provide a controlled path for crack propagation in the following cleavage step.
PAM-XIAMEN custom epitaxial or EPI wafer services on silicon wafers for research and development or mass production. PAM-XIAMEN processes single crystalline EPI layers on wafer diameters from 50mm to 150mm. Epitaxy is offered on bare wafers or those with buried layers, patterns or advanced device structures. For epitaxial layer deposition, it is important to determine what type EPI layer the application requires before determining how to deposit it. Homoepitaxy is when a crystalline film is grown with the same material as the substrate. Heteroepitaxy is more common, and grows a crystalline film made of a different material than the substrate. Depending on the type epi layer, there are three different ways that they can be deposited. PAM-XIAMEN offers epitaxial wafers with diameters up to 300mm. While 300mm EPI wafers are primarily used in highly integrated semiconductor elements (ICs), smaller diameters are also used for power applications. In order to satisfy the various requirements, substrates and epitaxial layers are designed according to customer specifications
Are You Looking for an Silicon Wafer?
PAM-XIAMEN is your go-to place for semiconductor wafers, including Silicon wafers, as we have been doing it for almost 30 years! Send us enquiry to learn more about the wafers that we offer and how we can help you with your next project. Our group team can give you technology support.
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