|Place of Origin:||China|
|Minimum Order Quantity:||1-10,000pcs|
|Delivery Time:||5-50 working days|
|Supply Ability:||10,000 wafers/month|
|Product Name:||GaSb Wafer||Other Name:||P Type Gallium Antimonide Wafer|
|Wafer Thickness:||500±25um||Wafer Diameter:||2"|
2 inch wafer,
4 inch wafer
P Type , GaSb(Gallium Antimonide) Wafer , 2”, Test Grade -Semiconductor Wafer Manufacturing
2" GaSb Wafer Specification
|Primary Flat Length||16±2mm|
|Secondary Flat Length||8±1mm|
|Laser Marking||upon request|
|Suface Finish||P/E, P/P|
|Package||Single wafer container or cassette|
Band structure and carrier concentration of GaSb Wafer include Basic Parameters,Temperature, Dependences,Dependence of the Energy Gap on Hydrostatic Pressure, Effective Masses, Donors and Acceptors
Quality inspection from raw material to production, and delivery.
Professional quality control person, to avoid the unqualified products flowing to customer.
Strict inspection to Raw material, production, and delivery.
Full series of equipment in quality laboratory.
|Energy gap||0.726 eV|
|Energy separation (EΓL) between Γ and L valleys||0.084 eV|
|Energy separation (EΓX) between Γ and X valleys||0.31 eV|
|Energy spin-orbital splitting||0.80 eV|
|Intrinsic carrier concentration||1.5·1012 cm-3|
|Intrinsic resistivity||103 Ω·cm|
|Effective conduction band density of states||2.1·1017 cm-3|
|Effective valence band density of states||1.8·1019 cm-3|
|Band structure and carrier concentration of GaSb. 300 K
Eg= 0.726 eV
EL = 0.81 eV
EX = 1.03 eV
Eso = 0.8 eV
For typical donor concentrations Nd≥ 1017 cm-3 the shallow donor states connected with Γ-valley did not appear.
The dominant acceptor of undoped GaSb seems to be a native defect.
This acceptor is doubly ionizable
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