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Semiconductor GaSb Gallium Antimonide Wafer 2 Inch Test Grade 500±25um Thickness

Semiconductor GaSb Gallium Antimonide Wafer 2 Inch Test Grade 500±25um Thickness

Semiconductor GaSb Gallium Antimonide Wafer 2 Inch Test Grade 500±25um Thickness

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Price: By Case
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: GaSb Wafer Other Name: P Type Gallium Antimonide Wafer
Feature: Test Grade Dopant: Zinc
Wafer Thickness: 500±25um Wafer Diameter: 2"
WARP: <12um BOW: <10um

P Type , GaSb(Gallium Antimonide) Wafer , 2”, Test Grade -Semiconductor Wafer Manufacturing
 
2" GaSb Wafer Specification

Item Specifications
Dopant Zinc
Conduction Type P-type
Wafer Diameter 2"
Wafer Orientation (100)±0.5°
Wafer Thickness 500±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration (5-100)x1017cm-3
Mobility 200-500cm2/V.s
EPD <2x103cm-2
TTV <10um
BOW <10um
WARP <12um
Laser Marking upon request
Suface Finish P/E, P/P
Epi Ready yes
Package Single wafer container or cassette

Band structure and carrier concentration of GaSb Wafer

Band structure and carrier concentration of GaSb Wafer include Basic Parameters,Temperature, Dependences,Dependence of the Energy Gap on Hydrostatic Pressure, Effective Masses, Donors and Acceptors

 

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Full series of equipment in quality laboratory.

 

Basic Parameters

Energy gap 0.726 eV
Energy separation (EΓL) between Γ and L valleys 0.084 eV
Energy separation (EΓX) between Γ and X valleys 0.31 eV
Energy spin-orbital splitting 0.80 eV
Intrinsic carrier concentration 1.5·1012 cm-3
Intrinsic resistivity 103 Ω·cm
Effective conduction band density of states 2.1·1017 cm-3
Effective valence band density of states 1.8·1019 cm-3

 

Semiconductor GaSb Gallium Antimonide Wafer 2 Inch Test Grade 500±25um Thickness Band structure and carrier concentration of GaSb. 300 K
Eg= 0.726 eV
EL = 0.81 eV
EX = 1.03 eV
Eso = 0.8 eV

Ionization energies of shallow donors (eV)

Te(L) Te(X) Se(L) Se(X) S(L) S(X)
~0.02 ≤0.08 ~0.05 ~0.23 ~0.15 ~0.30

For typical donor concentrations Nd≥ 1017 cm-3 the shallow donor states connected with Γ-valley did not appear.

Ionization energies of shallow acceptors (eV):

The dominant acceptor of undoped GaSb seems to be a native defect.
This acceptor is doubly ionizable

Ea1 Ea2 Si Ge Zn
0.03 0.1 ~0.01 ~0.009 ~0.037

 

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We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.

 

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