|Place of Origin:||China|
|Minimum Order Quantity:||1-10,000pcs|
|Packaging Details:||Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere|
|Delivery Time:||5-50 working days|
|Supply Ability:||10,000 wafers/month|
|Product Name:||N Type InSb Substrate Wafer||Wafer Diamter:||3 Inch|
|Application:||Photoelectromagnetic Device||Grade:||Dummy Grade|
|Wafer Thickness:||76.2±0.4mm||Keyword:||InSb Wafer Indium Antimonide|
polished silicon wafer,
N Type , InSb Substrate , 3”, Dummy Grade -Compound Semiconductor
N Type, InSb Substrate, 3”, Dummy Grade
|Primary flat length||
|Secondary flat length||
|Surface Finish||P/E, P/P|
|Package||Epi-Ready,Single wafer container or CF cassette|
|Electrical and Doping Specification|
|Dopant||Tellurium||Low tellurium||High tellurium|
|Mobility cm² V-1s-1||≥2.5*104||≥2.5*105||Not Specified|
|Carrier Concentration cm-3||(1-7)*1017||4*1014-2*1015||≥1*1018|
|Infrared refractive index||4.0|
|Radiative recombination coefficient||5·10-11 cm3s-1|
7X24-hour Telephone Consulting Service is available.
Reply and solution will be provided in 8 hours upon customer’s service request.
After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.
Quality inspection from raw material to production, and delivery.
Professional quality control person, to avoid the unqualified products flowing to customer.
Strict inspection to Raw material, production, and delivery.
Full series of equipment in quality laboratory.
Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.
We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.
For 120K < T < 360K dn/dT = 1.6·10-11·n
|Refractive index n versus photon energy, 300 K.
|Normal incidence reflectivity versus photon energy, 300 K.
|Absorption coefficient near the intrinsic absorption edge, T = 2K
A ground state Rydberg energy RX1= 0.5 meV.
|Absorption coefficient near the intrinsic absorption edge for different temperatures
|Absorption edge of pure InSb. T (K):
|Absorption coefficient versus photon energy, T = 300 K.
|Absorption coefficient versus photon energy at different doping levels, n-InSb, T = 130 K
|Absorption coefficient versus photon energy at different doping levels, p-InSb, T = 5K.