|Place of Origin:||China|
|Minimum Order Quantity:||1-10,000pcs|
|Packaging Details:||Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere|
|Delivery Time:||5-50 working days|
|Supply Ability:||10,000 wafers/month|
|Product Name:||N Type InSb Wafer||Wafer Diamter:||4 Inch|
|Application:||Photoelectromagnetic Device||Grade:||Prime Grade|
|Wafer Thickness:||1000.0±0.5mm||Keyword:||Indium Antimonide Wafer|
|Surface Finish:||P/E, P/P||Package:||Epi-Ready,Single Wafer Container Or CF Cassette|
polished silicon wafer,
as cut wafer
N Type , Te-doped InSb Wafer , 4”, Prime Grade -Powerway Wafer
N Type, InSb Wafer, 4”, Prime Grade
|Primary flat length||
|Secondary flat length||
|Surface Finish||P/E, P/P|
|Package||Epi-Ready,Single wafer container or CF cassette|
|Electrical and Doping Specification|
|Dopant||Tellurium||Low tellurium||High tellurium|
|Mobility cm² V-1s-1||≥2.5*104||≥2.5*105||Not Specified|
|Carrier Concentration cm-3||(1-7)*1017||4*1014-2*1015||≥1*1018|
Thermal properties of InSb Wafer
|Bulk modulus||4.7·1011 dyn cm-1|
|Melting point||527 °C|
|Specific heat||0.2 J g-1°C-1|
|Thermal conductivity||0.18 W cm-1 °C-1|
|Thermal diffusivity||0.16 cm2 s-1|
|Thermal expansion, linear||5.37·10-6 °C-1|
|Temperature dependence of thermal conductivity n-InSb. Electron concentration at 78 K n (cm-3):
Solid line shows the temperature dependence of thermal conductivity at high temperatures
|Temperature dependence of thermal conductivity p-InSb.
Electron concentration at 78K p (cm-3):
|Temperature dependence of specific heat at constant pressure.
|Temperature dependence of linear expansion coefficient (low temperatures)
|Temperature dependence of linear expansion coefficient (high temperatures)
|Temperature dependence of Sb saturation vapor pressure
Melting point Tm = 800K.
PAM-XIAMEN provides single crystal InSb(Indium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. Indium Antimonide (InSb) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness.PAM-XIAMEN can provide epi ready grade InSb wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.
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After years of development, we have established perfect sales network and integrated after-sale service system at domestic and abroad, which enables the company to provide timely, accurate and efficient services, and won good customer reputations. The products are sold all over in China and exported to more than 30 countries and regions such as Europe, America, Southeast Asia, South America, Middle East and Africa. The production, sales volume and scale are all ranked first in the same industry.