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Prime Grade InSb Wafer 3 Inch Undoped For Infrared Astronomy N Type

Prime Grade InSb Wafer 3 Inch Undoped For Infrared Astronomy N Type

Prime Grade InSb Wafer 3 Inch Undoped For Infrared Astronomy N Type

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: Indium Antimonide Substrate Wafer Wafer Diamter: 3 Inch
Grade: Prime Grade Feature: Undoped InSb Wafer
Wafer Thickness: 3″ 800or900±25um Keyword: Indium Antimonide InSb Wafer
High Light:

as cut wafer

,

insb wafer

Undoped, Indium Antimonide Substrate, 3”, Prime Grade

 

Undoped, Indium Antimonide Substrate, 3”, Prime Grade

 

Wafer Specification
Item Specifications
Wafer Diameter

 

3″76.2±0.4mm
 

Crystal Orientation

 

3″(111)AorB±0.1°

Thickness

 

3″ 800or900±25um
 

Primary flat length

 

3″22±2mm
 

Secondary flat length

 

3″11±1mm
 

Surface Finish P/E, P/P
Package Epi-Ready,Single wafer container or CF cassette

 

Electrical and Doping Specification
Conduction Type n-type
Dopant Undoped
EPD cm-2 ≤50
Mobility cm² V-1s-1 ≥4*105
Carrier Concentration cm-3 5*1013-3*1014

Electrical properties of InSb Wafer

Band structure and carrier concentration of InSb Wafer include Basic Parameters,Mobility and Hall Effect,Transport Properties in High Electric Fields,Impact Ionization
,Recombination Parameters

 

PAM-XIAMEN offers InSb wafer – Indium Antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111)or(100).Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths.

 

Service

 

7X24-hour Telephone Consulting Service is available.

Reply and solution will be provided in 8 hours upon customer’s service request.

After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.

 

Quality inspection from raw material to production, and delivery.

Professional quality control person, to avoid the unqualified products flowing to customer.

Strict inspection to Raw material, production, and delivery.

Full series of equipment in quality laboratory.

Basic Parameters

Breakdown field ≈103 V cm-1
Mobility Electrons ≤7.7·104 cm2V-1s-1
Mobility Holes ≤850 cm2V-1s-1
Diffusion coefficient Electrons ≤2·103 cm2s-1
Diffusion coefficient Holes ≤22 cm2s-1
Electron thermal velocity 9.8·105 m s-1
Hole thermal velocity 1.8·105 m s-1

Mobility and Hall Effect

Prime Grade InSb Wafer 3 Inch Undoped For Infrared Astronomy N Type

Electron Hall mobility versus temperature for different doping levels and different compensation ratios

Curve Nd (cm-3) θ = Na/Nd
1. 3.85·1014 0.5
2. 8.5·1014 0.88
3. 9.5·1014 0.98
4. 1.35·1015 0.99

 

Prime Grade InSb Wafer 3 Inch Undoped For Infrared Astronomy N Type Electron mobility versus temperature (high temperatures).
Solid line is theoretical calculation for electron-drift mobility.
Experimental data are Hall mobilities.
 

 

 

 

Maximal electron mobility for pure n-InSb
77 K 1.2·106 cm2V-1s-1
300 K 7.7·104 cm2V-1s-1
Maximal electron mobility for InSb grown on GaAs substrate
77K 1.5·105 cm2V-1s-1 (no= 2.2·1015 cm-3)
300 K 7.0·104 cm2V-1s-1 (no= 2.0·1016 cm-3)
Maximal electron mobility for InSb grown on InP substrate
77 K 1.1·105 cm2V-1s-1
300 K 7.0·104 cm2V-1s-1

 

Prime Grade InSb Wafer 3 Inch Undoped For Infrared Astronomy N Type Hole Hall mobility versus temperature for different hole concentrations.
po (cm-3):
1. 8·1014;
2. 3.15·1018;
3. 2.5·1019;
 

 

Impact Ionization

 

Prime Grade InSb Wafer 3 Inch Undoped For Infrared Astronomy N Type The dependence of generation rate for electrons gn versus electric field F, 300 K
 

For 300 K, for 30 V/cm < F < 300 V/cm:

gn(F) = 126·F2exp(F/160) (s-1),

where F is in V cm-1.

Prime Grade InSb Wafer 3 Inch Undoped For Infrared Astronomy N Type The dependence of generation rate for electrons gn versus electric field F, 77 K
 
Prime Grade InSb Wafer 3 Inch Undoped For Infrared Astronomy N Type The dependence of ionization rates for electrons αi versus the electric field F, T=78 K
 
Prime Grade InSb Wafer 3 Inch Undoped For Infrared Astronomy N Type The dependence of generation rate for holes gp versus the electric field F, T =77K
 

Recombination Parameters

For pure InSb at T≥250K lifetime of carrier (electrons and holes) is determined by Auger recombination:
τn = τp ≈1/C ni2,
where C≈5·10-26 cm-6 s-1 is the Auger coefficient.
ni is the intrinsic carrier concentration.

For T = 300 K τn = τp≈5·10-8 s
For T = 77K
n-type: the lifetime of holes τp ~ 10-6 s
p-type: the lifetime of electrons τn ~ 10-10 s

 

Prime Grade InSb Wafer 3 Inch Undoped For Infrared Astronomy N Type Temperature dependence of surface recombination velocity for p-InSb.
 
Prime Grade InSb Wafer 3 Inch Undoped For Infrared Astronomy N Type Temperature dependence of surface recombination velocity for n-InSb.
 

 

Radiative recombination coefficient ~5·10-11 cm3s-1
Auger coefficient ~5·10-26 cm6s-1

Are You Looking for an InSb Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including InSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

 

Service

 

7X24-hour Telephone Consulting Service is available.

Reply and solution will be provided in 8 hours upon customer’s service request.

After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.

 

Quality inspection from raw material to production, and delivery.

Professional quality control person, to avoid the unqualified products flowing to customer.

Strict inspection to Raw material, production, and delivery.

Full series of equipment in quality laboratory.

 

Contact Details
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