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4 Inch InAs Wafer Prime Grade P Type Zinc Dopant Mechanical Grade

4 Inch InAs Wafer Prime Grade P Type Zinc Dopant Mechanical Grade

4 Inch InAs Wafer Prime Grade P Type Zinc Dopant Mechanical Grade

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: Prime Grade InAs Wafer Conduction Type: P Type
Wafer Thickness: 900±25um Wafer Diamter: 4 Inch
Grade: Prime Grade Keyword: Indium Arsenide InAs Wafer
EPD: <3x104cm-2 BOW: <15um
High Light:

n type wafer

,

3 inch wafer

P Type , InAs (Indium Arsenide) Wafer , 4”, Prime Grade
 
4" InAs Wafer Specification

Item Specifications
Dopant Zinc
Conduction Type P-type
Wafer Diameter 4"
Wafer Orientation (100)±0.5°
Wafer Thickness 900±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration (1-10)x1017cm-3
Mobility 100-400cm2/V.s
EPD <3x104cm-2
TTV <15um
BOW <15um
WARP <20um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

Thermal properties of InAs Wafer

Bulk modulus 5.8·1011 dyn cm-2
Melting point 942 °C
Specific heat 0.25 J g-1 °C-1
Thermal conductivity 0.27 W cm-1 °C-1
Thermal diffusivity 0.19 cm2s-1
Thermal expansion, linear 4.52·10-6 °C-1

 

 

4 Inch InAs Wafer Prime Grade P Type Zinc Dopant Mechanical Grade Temperature dependence of linear expansion coefficient
(low temperature)
 
4 Inch InAs Wafer Prime Grade P Type Zinc Dopant Mechanical Grade Temperature dependence of linear expansion coefficient
(high temperature)
 
4 Inch InAs Wafer Prime Grade P Type Zinc Dopant Mechanical Grade Temperature dependences of Nernst coefficient (transverse Nernst-Ettinghausen effect)
Electron concentration at 77K
no (cm-3): 1. 2.96·1016; 2. 4.46·1016; 3. 8.43·1016; 4. 4.53·1017; 5. 1.56·1018; 6. 2.28·1018; 7. 5·1018; 8. 1.68·1019.
 

Melting point Tm = 1215 K.
Saturated vapor pressure (in Pascals):

for 950 K - 2·10-3,
for 1000 K - 10-2,
for 1050 K - 10-1.

Thermal properties of InAs Wafer

Bulk modulus 5.8·1011 dyn cm-2
Melting point 942 °C
Specific heat 0.25 J g-1 °C-1
Thermal conductivity 0.27 W cm-1 °C-1
Thermal diffusivity 0.19 cm2s-1
Thermal expansion, linear 4.52·10-6 °C-1

 

4 Inch InAs Wafer Prime Grade P Type Zinc Dopant Mechanical Grade

Temperature dependence of thermal conductivity.
n-type sample, no (cm-3): 1. 1.6·1016; 2. 2.0·1017;
p-type sample, po (cm-3): 3. 2.0·1017.
 

4 Inch InAs Wafer Prime Grade P Type Zinc Dopant Mechanical Grade Temperature dependences of thermal conductivity for high temperatures
Electron concentration
no (cm-3): 1. 5·1016; 2. 2·1016; 3. 3·1016.
4 Inch InAs Wafer Prime Grade P Type Zinc Dopant Mechanical Grade Temperature dependence of specific heat at constant pressure
 

For 298K < T < 1215K

Cp= 0.240 + 3.97·10-5·T (J g-1°C -1).

 

4 Inch InAs Wafer Prime Grade P Type Zinc Dopant Mechanical Grade Temperature dependence of linear expansion coefficient
(low temperature)
 
4 Inch InAs Wafer Prime Grade P Type Zinc Dopant Mechanical Grade Temperature dependence of linear expansion coefficient
(high temperature)
 
4 Inch InAs Wafer Prime Grade P Type Zinc Dopant Mechanical Grade Temperature dependences of Nernst coefficient (transverse Nernst-Ettinghausen effect)
Electron concentration at 77K
no (cm-3): 1. 2.96·1016; 2. 4.46·1016; 3. 8.43·1016; 4. 4.53·1017; 5. 1.56·1018; 6. 2.28·1018; 7. 5·1018; 8. 1.68·1019.
 

Melting point Tm = 1215 K.
Saturated vapor pressure (in Pascals):

for 950 K - 2·10-3,
for 1000 K - 10-2,
for 1050 K - 10-1.

 

About Us

 

Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.

 

We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.

 

Contact Details
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