|Place of Origin:||China|
|Minimum Order Quantity:||1-10,000pcs|
|Packaging Details:||Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere|
|Delivery Time:||5-50 working days|
|Supply Ability:||10,000 wafers/month|
|Product Name:||GaAs Wafer||Wafer Diamter:||6 Inch|
|Conduction Type:||Semi-insulating||Grade:||Mechanical Grade|
|Usage:||Microelectronics||Keyword:||Gallium Arsenide Wafer|
n type silicon wafer,
p type silicon wafer
Semi-Insulating, Gallium Arsenide Substrate, 6”, Mechanical Grade
(6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications
|NOTCH Deepth(mm)||(1-1.25)mm 89°-95°|
|Resistivity(ohm.cm||＞1.0×107 or 0.8-9 x10-3|
|Edge Exclusion for Bow and Warp(mm)||N/A|
Properties of GaAs Crystal
|Atoms/cm3||4.42 x 1022|
|Breakdown Field||approx. 4 x 105|
|Effective Density of States in the Conduction Band, Nc (cm-3)||4.7 x 1017|
|Effective Density of States in the Valence Band, Nv (cm-3)||7.0 x 1018|
|Electron Affinity (V)||4.07|
|Energy Gap at 300K (eV)||1.424|
|Intrinsic Carrier Concentration (cm-3)||1.79 x 106|
|Intrinsic Debye Length (microns)||2250|
|Intrinsic Resistivity (ohm-cm)||108|
|Lattice Constant (angstroms)||5.6533|
|Linear Coefficient of Thermal Expansion,||6.86 x 10-6|
|ΔL/L/ΔT (1/deg C)|
|Melting Point (deg C)||1238|
|Minority Carrier Lifetime (s)||approx. 10-8|
|Optical Phonon Energy (eV)||0.035|
|Phonon Mean Free Path (angstroms)||58|
|Thermal Conductivity at 300 K||0.46|
|Thermal Diffusivity (cm2/sec)||0.24|
|Vapor Pressure (Pa)||100 at 1050 deg C;|
|1 at 900 deg C|
What is GaAs wafer?
GaAs wafer is an important semiconducor material. It belongs to group III-V compound semiconductor. It is a sphalerite type lattice structure with a lattice constant of 5.65x 10-10m, a melting point of 1237 ℃ and a band gap of 1.4 EV. Gallium arsenide can be made into semi insulating high resistance materials with resistivity higher than silicon and germanium by more than three orders of magnitude, which can be used to make integrated circuit substrate, infrared detector, γ photon detector, etc. Because its electron mobility is 5-6 times larger than that of silicon, it has been widely used in microwave devices and high-speed digital circuits. The semiconductor device made of GaAs has the advantages of high frequency, high temperature and low temperature, low noise and strong radiation resistance. In addition, it can also be used to make bulk effect devices.
What is the Mechanical properties, elastic constants, lattice vibrations of GaAs Wafer?
|Bulk modulus||7.53·1011 dyn cm-2|
|Density||5.317 g cm-3|
|Hardness on the Mohs scale||between 4 and 5|
|Surface microhardness (using Knoop's pyramid test)||750 kg mm-2|
|Piezoelectric constant||e14=-0.16 C m-2|
|Temperature dependences of elastic constants.
For 0<T<Tm=1513K (in units of 1011 dyn cm-2)
C11= 12.17 - 1.44·10-3T
C12= 5.46 - 0.64·10-3T
C44= 6.16 - 0.70·10-3T
|Bulk modulus (compressibility-1)||Bs= 7.53·1011dyn/cm2|
|Shear modulus||C'= 3.285·1011dyn/cm2|
| Young's modulus||Yo= 8.59·1011dyn/cm2|
| Poisson ratio||σo = 0.31|
|Expression for wave speed||Wave speed
(in units of
(in units of 1012 Hz)
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