Off Axis SiC 4H N Type Wafer Research Grade Nitrogen Doped Double Face Polished

Off-Axis 4H N Type SiC Wafer Material, Research Grade , 10mm x 10mm

SiC Crystal Structure

SiC Crystal has many different crystal structures,which is called polytypes.The most common polytypes of SiC presently being developed for electronics are the cubic 3C-SiC, the hexagonal 4H-SiC and 6H-SiC, and the rhombohedral 15R-SiC. These polytypes are characterized by the stacking sequence of the biatom layers of the SiC structure.For more details, please enquire our engineer team.

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SILICON CARBIDE MATERIAL PROPERTIES

4H N Type SiC Wafer, Research Grade,10mm x 10mm

SiC MicroElectromechanical Systems (MEMS) and Sensors

Unfortunately, the same properties that make SiC more durable than silicon also make SiC more difficult to micromachine. Approaches to fabricating harsh-environment MEMS structures in SiC and prototype SiC-MEMS results obtained to date are reviewed in References 124 and 190. The inability to perform fine-patterned etching of single-crystal 4H- and 6H-SiC with wet chemicals (Section 5.5.4) makes micromachining of this electronic-grade SiC more difficult. Therefore, the majority of SiC micromachining to date has been implemented in electrically inferior heteroepitaxial 3C-SiC and polycrystalline SiC deposited on silicon wafers. Variations of bulk micromachining, surface micromachining, and micromolding techniques have been used to fabricate a wide variety of micromechanical structures, including resonators and micromotors. A standardized SiC on silicon wafer micromechanical fabrication process foundry service, which enables users to realize their own application-specific SiC micromachined devices while sharing wafer space and cost with other users, is commercially available .

As discussed in Section 5.3.1, a primary application of SiC harsh-environment sensors is to enable active monitoring and control of combustion engine systems to improve fuel efficiency while reducing pollution. Toward this end, SiC’s high-temperature capabilities have enabled the realization of catalytic metal–SiC and metal-insulator–SiC prototype gas sensor structures with great promise for emission monitoring applications and fuel system leak detection . High-temperature operation of these structures, not possible with silicon, enables rapid detection of changes in hydrogen and hydrocarbon content to sensitivities of parts per million in very small-sized sensors that could easily be placed unobtrusively on an engine without the need for cooling. However, further improvements to the reliability, reproducibility, and cost of SiC-based gas sensors are needed before these systems will be ready for widespread use in consumer automobiles and aircraft. In general, the same can be said for most SiC MEMS, which will not achieve widespread beneficial system insertion until high reliability in harsh environments is assured via further technology development.

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