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Off Axis SiC 4H N Type Wafer Research Grade Nitrogen Doped Double Face Polished

Off Axis SiC 4H N Type Wafer Research Grade Nitrogen Doped Double Face Polished

Off Axis SiC 4H N Type Wafer Research Grade Nitrogen Doped Double Face Polished

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Price: By Case
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Name: 4H N Type SIC Wafer Grade: Research Grade
Description: Single Crystal Silicon Carbide Wafer Size: 10mm X 10mm
Keywords: SiC Wafer Application: Electronic Industry
Off Axis: 4°or 8° Toward <11-20>± 0.5° Primary Flat Orientation: Parallel {1-100} ± 5°
High Light:

semi standard wafer

,

4h sic wafer

Off-Axis 4H N Type SiC Wafer Material, Research Grade , 10mm x 10mm

 

SiC Crystal Structure

SiC Crystal has many different crystal structures,which is called polytypes.The most common polytypes of SiC presently being developed for electronics are the cubic 3C-SiC, the hexagonal 4H-SiC and 6H-SiC, and the rhombohedral 15R-SiC. These polytypes are characterized by the stacking sequence of the biatom layers of the SiC structure.For more details, please enquire our engineer team.

 

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SILICON CARBIDE MATERIAL PROPERTIES

Polytype Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å a=3.073 Å
  c=10.053 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 · 103 kg/m3 3.21 · 103 kg/m3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index no = 2.719 no = 2.707
  ne = 2.777 ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/mK 490 W/mK
Break-Down Electrical Field 2-4 · 108 V/m 2-4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~9 ~9

 

4H N Type SiC Wafer, Research Grade,10mm x 10mm

SUBSTRATE PROPERTY S4H-51-N-PWAM-330 S4H-51-N-PWAM-430
Description Research Grade 4H SiC Substrate
Polytype 4H
Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
Carrier Type n-type
Dopant Nitrogen
Resistivity (RT) 0.012 – 0.0028 Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM <50 arcsec
Micropipe Density A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
Surface Orientation  
On axis <0001>± 0.5°
Off axis 4°or 8° toward <11-20>± 0.5°
Primary flat orientation Parallel {1-100} ± 5°
Primary flat length 16.00 ± 1.70) mm
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 8.00 ± 1.70 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Usable area ≥ 90 %
Edge exclusion 1 mm

 

 

 

SiC MicroElectromechanical Systems (MEMS) and Sensors

 

Unfortunately, the same properties that make SiC more durable than silicon also make SiC more difficult to micromachine. Approaches to fabricating harsh-environment MEMS structures in SiC and prototype SiC-MEMS results obtained to date are reviewed in References 124 and 190. The inability to perform fine-patterned etching of single-crystal 4H- and 6H-SiC with wet chemicals (Section 5.5.4) makes micromachining of this electronic-grade SiC more difficult. Therefore, the majority of SiC micromachining to date has been implemented in electrically inferior heteroepitaxial 3C-SiC and polycrystalline SiC deposited on silicon wafers. Variations of bulk micromachining, surface micromachining, and micromolding techniques have been used to fabricate a wide variety of micromechanical structures, including resonators and micromotors. A standardized SiC on silicon wafer micromechanical fabrication process foundry service, which enables users to realize their own application-specific SiC micromachined devices while sharing wafer space and cost with other users, is commercially available .

 

As discussed in Section 5.3.1, a primary application of SiC harsh-environment sensors is to enable active monitoring and control of combustion engine systems to improve fuel efficiency while reducing pollution. Toward this end, SiC’s high-temperature capabilities have enabled the realization of catalytic metal–SiC and metal-insulator–SiC prototype gas sensor structures with great promise for emission monitoring applications and fuel system leak detection . High-temperature operation of these structures, not possible with silicon, enables rapid detection of changes in hydrogen and hydrocarbon content to sensitivities of parts per million in very small-sized sensors that could easily be placed unobtrusively on an engine without the need for cooling. However, further improvements to the reliability, reproducibility, and cost of SiC-based gas sensors are needed before these systems will be ready for widespread use in consumer automobiles and aircraft. In general, the same can be said for most SiC MEMS, which will not achieve widespread beneficial system insertion until high reliability in harsh environments is assured via further technology development.

 

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