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On Axis Sic Silicon Carbide Wafer 4 Deg Off 4H N Type Production Grade

On Axis Sic Silicon Carbide Wafer 4 Deg Off 4H N Type Production Grade

On Axis Sic Silicon Carbide Wafer 4 Deg Off 4H N Type Production Grade

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Price: By Case
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Grade: Production Name: Semiconductor Silicon Carbide Wafer
Application: Researcher Description: SIC Silicon Carbide Wafer
Size: 10mm X 10mm Keywords: SiC Wafer
Resistivity (RT): 0.012 – 0.0028 Ω·cm Secondary Flat Length: 8.00 ± 1.70 Mm

On-Axis Or 4deg.Off 4H N Type Sic Wafer Material ,Production Grade,10mm x 10mm

 

Here shows detail specification:

SILICON CARBIDE MATERIAL PROPERTIES

Polytype Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å a=3.073 Å
  c=10.053 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 · 103 kg/m3 3.21 · 103 kg/m3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index no = 2.719 no = 2.707
  ne = 2.777 ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/mK 490 W/mK
Break-Down Electrical Field 2-4 · 108 V/m 2-4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~9 ~9

 

 

4H N Type SiC Wafer, Production Grade,10mm x 10mm

 

SUBSTRATE PROPERTY S4H-51-N-PWAM-330 S4H-51-N-PWAM-430
Description Production Grade 4H SiC Substrate
Polytype 4H
Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
Carrier Type n-type
Dopant Nitrogen
Resistivity (RT) 0.012 – 0.0028 Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM <30 arcsec <50 arcsec
Micropipe Density A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
Surface Orientation  
On axis <0001>± 0.5°
Off axis 4°or 8° toward <11-20>± 0.5°
Primary flat orientation Parallel {1-100} ± 5°
Primary flat length 16.00 ± 1.70) mm
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 8.00 ± 1.70 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Usable area ≥ 90 %
Edge exclusion 1 mm
     

 

Single crystal SiC Properties

Here we compare property of Silicon Carbide, including Hexagonal SiC,CubicSiC,Single crystal SiC.

Property of Silicon Carbide (SiC)

Comparision of Property of Silicon Carbide, including Hexagonal SiC,Cubic SiC,Single crystal SiC:

Property Value Conditions
Density 3217 kg/m^3 hexagonal
Density 3210 kg/m^3 cubic
Density 3200 kg/m^3 Single crystal
Hardness,Knoop(KH) 2960 kg/mm/mm 100g,Ceramic,black
Hardness,Knoop(KH) 2745 kg/mm/mm 100g,Ceramic,green
Hardness,Knoop(KH) 2480 kg/mm/mm Single crystal.
Young's Modulus 700 GPa Single crystal.
Young's Modulus 410.47 GPa Ceramic,density=3120 kg/m/m/m, at room temperature
Young's Modulus 401.38 GPa Ceramic,density=3128 kg/m/m/m, at room temperature
Thermal conductivity 350 W/m/K Single crystal.
Yield strength 21 GPa Single crystal.
Heat capacity 1.46 J/mol/K Ceramic,at temp=1550 C.
Heat capacity 1.38 J/mol/K Ceramic,at temp=1350 C.
Heat capacity 1.34 J/mol/K Ceramic,at temp=1200 C.
Heat capacity 1.25 J/mol/K Ceramic,at temp=1000 C.
Heat capacity 1.13 J/mol/K Ceramic,at temp=700 C.
Heat capacity 1.09 J/mol/K Ceramic,at temp=540 C.
Electrical resistivity 1 .. 1e+10 Ω*m Ceramic,at temp=20 C
Compressive strength 0.5655 .. 1.3793 GPa Ceramic,at temp=25 C
Modulus of Rupture 0.2897 GPa Ceramic,with 1 wt% B addictive
Modulus of Rupture 0.1862 GPa Ceramifc,at room temperature
Poisson's Ratio 0.183 .. 0.192 Ceramic,at room temperature,density=3128 kg/m/m/m
Modulus of Rupture 0.1724 GPa Ceramic,at temp=1300 C
Modulus of Rupture 0.1034 GPa Ceramic,at temp=1800 C
Modulus of Rupture 0.07586 GPa Ceramic,at temp=1400 C
Tensile strength 0.03448 .. 0.1379 GPa Ceramic,at temp=25 C

 

* Reference:CRC Materials Science and Engineering Handbook

Comparision of Property of single crystal SiC, 6H and 4H:

Property Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å a=3.073 Å
c=10.053 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 · 103 kg/m3 3.21 · 103 kg/m3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index no = 2.719 no = 2.707
ne = 2.777 ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/mK 490 W/mK
Break-Down Electrical Field 2-4 · 108 V/m 2-4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~9 ~9

 

* Reference:Xiamen Powerway Advanced Material Co.,Ltd.

Comparision of property of 3C-SiC,4H-SiC and 6H-SiC:

Si-C Polytype 3C-SiC 4H-SiC 6H-SiC
Crystal structure Zinc blende (cubic) Wurtzite ( Hexagonal) Wurtzite ( Hexagonal)
Group of symmetry T2d-F43m C46v-P63mc C46v-P63mc
Bulk modulus 2.5 x 1012 dyn cm-2 2.2 x 1012 dyn cm-2 2.2 x 1012 dyn cm-2
Linear thermal expansion coefficient 2.77 (42) x 10-6 K-1    
Debye temperature 1200 K 1300 K 1200 K
Melting point 3103 (40) K 3103 ± 40 K 3103 ± 40 K
Density 3.166 g cm-3 3.21 g cm-3 3.211 g cm-3
Hardness 9.2-9.3 9.2-9.3 9.2-9.3
Surface microhardness 2900-3100 kg mm-2 2900-3100 kg mm-2 2900-3100 kg mm-2
Dielectric constant (static) ε0 ~= 9.72 The value of 6H-SiC dielectric constant is usually used ε0,ort ~= 9.66
Infrared refractive index ~=2.55 ~=2.55 (c axis) ~=2.55 (c axis)
Refractive index n(λ) n(λ)~= 2.55378 + 3.417 x 104·λ-2 n0(λ)~= 2.5610 + 3.4 x 104·λ-2 n0(λ)~= 2.55531 + 3.34 x 104·λ-2
ne(λ)~= 2.6041 + 3.75 x 104·λ-2 ne(λ)~= 2.5852 + 3.68 x 104·λ-2
Radiative recombination coefficient   1.5 x 10-12 cm3/s 1.5 x 10-12 cm3/s
Optical photon energy 102.8 meV 104.2 meV 104.2 meV
Effective electron mass (longitudinal)ml 0.68mo 0.677(15)mo 0.29mo
Effective electron mass (transverse)mt 0.25mo 0.247(11)mo 0.42mo
Effective mass of density of states mcd 0.72mo 0.77mo 2.34mo
Effective mass of the density of states in one valley of conduction band mc 0.35mo 0.37mo 0.71mo
Effective mass of conductivity mcc 0.32mo 0.36mo 0.57mo
Effective hall mass of density of state mv? 0.6 mo ~1.0 mo ~1.0 mo
Lattice constant a=4.3596 A a = 3.0730 A a = 3.0730 A
b = 10.053 b = 10.053

* Reference: IOFFE

SiC 4H and SiC 6H manufacturer reference:PAM-XIAMEN is the world’s leading developer of solid-state lighting technology,he offer a full line: Sinlge crystal SiC wafer and epitaxial wafer and SiC wafer reclaim

 

Electrical Breakdown

The term electrical breakdown or electric breakdown has several similar but distinctly different meanings. For example, the term can apply to the failure of an electric circuit. Alternatively, it may refer to a rapid reduction in the resistance of an electrical insulator that can lead to aspark jumping around or through the insulator. This may be a momentary event (as in an electrostatic discharge), or may lead to a continuousarc discharge if protective devices fail to interrupt the current in a high power circuit.

There is currently much interest in its use as a semiconductor material in electronics, where its high thermal conductivity, high electric field breakdown strength and high maximum current density make it more promising than silicon for high-powered devices

 

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