N Type 4h Sic Wafer Dummy Grade Optoelectronic Industry Use Single Crystal

4H N Type SiC Wafer Material , Dummy Grade , 10mm x 10m

sic crystal defects

Most of the defects which were observed in SiC were also observed in other crystalline materials. Like the dislocations, stacking faults (SFs), low angle boundaries (LABs) and twins. Some others appear in materials having the Zing- Blend or the Wurtzite structure, like the IDBs. Micropipes and inclusions from other phases mainly appear in SiC.

PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide) wafer for electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available.

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SILICON CARBIDE MATERIAL PROPERTIES

4H N Type SiC Wafer, Dummy Grade,10mm x 10mm

SiC MicroElectromechanical Systems (MEMS) and Sensors

As described in Hesketh’s chapter on micromachining in this book, the development and use of siliconbased MEMS continues to expand. While the previous sections of this chapter have centered on the use of SiC for traditional semiconductor electronic devices, SiC is also expected to play a significant role in emerging MEMS applications . SiC has excellent mechanical properties that address some shortcomings of silicon-based MEMS such as extreme hardness and low friction reducing mechanical wear-out as well as excellent chemical inertness to corrosive atmospheres. For example, SiCs excellent durability is being examined as enabling for long-duration operation of electric micromotors and micro jet-engine power generation sources where the mechanical properties of silicon appear to be insufficient .

For applications requiring high temperature, low-leakage SiC electronics not possible with SiC layers deposited on silicon (including high-temperature transistors, as discussed in Section 5.6.2), concepts for integrating much more capable electronics with MEMS on 4H/6H SiC wafers with epilayers have also been proposed. For example, pressure sensors being developed for use in higher temperature regions of jet engines are implemented in 6H-SiC, largely owing to the fact that low junction leakage is required to achieve proper sensor operation . On-chip 4H/6H integrated transistor electronics that beneficially enable signal conditioning at the high-temperature sensing site are also being developed . With all micromechanical-based sensors, it is vital to package the sensor in a manner that minimizes the imposition of thermomechanical induced stresses (which arise owing to thermal expansion coefficient mismatches over much larger temperature spans enabled by SiC) onto the sensing elements. Therefore (as mentioned previously in Section 5.5.6), advanced packaging is almost as critical as the use of SiC toward usefully expanding the operational envelope of MEMS in harsh environments.

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