Place of Origin: | China |
Brand Name: | PAM-XIAMEN |
Minimum Order Quantity: | 1-10,000pcs |
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Price: | By Case |
Delivery Time: | 5-50 working days |
Payment Terms: | T/T |
Supply Ability: | 10,000 wafers/month |
Name: | Semi Insulating SIC Wafer | Grade: | Production Grade |
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Application: | Researcher | Size: | 10mm X 10mm |
Description: | 6H SEMI Substrate | Keywords: | Semiconductor Silicon Carbide Wafer |
Polytype: | 6H | FWHM: | <30 Arcsec <50 Arcsec |
High Light: | semi standard wafer,sic wafer |
6H Semi-Insulating SiC Substrate, Production Grade,10mm x 10mm
Here shows detail specification:
SILICON CARBIDE MATERIAL PROPERTIES
Polytype | Single Crystal 4H | Single Crystal 6H |
Lattice Parameters | a=3.076 Å | a=3.073 Å |
c=10.053 Å | c=15.117 Å | |
Stacking Sequence | ABCB | ABCACB |
Band-gap | 3.26 eV | 3.03 eV |
Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
Refraction Index | no = 2.719 | no = 2.707 |
ne = 2.777 | ne = 2.755 | |
Dielectric Constant | 9.6 | 9.66 |
Thermal Conductivity | 490 W/mK | 490 W/mK |
Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
Mohs Hardness | ~9 | ~9 |
6H Semi-Insulating SiC Substrate, Production Grade,10mm x 10mm
SUBSTRATE PROPERTY | S6H-51-SI-PWAM-250 S6H-51-SI-PWAM-330 S6H-51-SI-PWAM-430 |
Description | Production Grade 6H SEMI Substrate |
Polytype | 6H |
Diameter | (50.8 ± 0.38) mm |
Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm |
Resistivity (RT) | >1E5 Ω·cm |
Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
FWHM | <30 arcsec <50 arcsec |
Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 |
Surface Orientation | |
On axis <0001>± 0.5° | |
Off axis 3.5° toward <11-20>± 0.5° | |
Primary flat orientation | Parallel {1-100} ± 5° |
Primary flat length | 16.00 ± 1.70 mm |
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5° | |
C-face:90° ccw. from orientation flat ± 5° | |
Secondary flat length | 8.00 ± 1.70 mm |
Surface Finish | Single or double face polished |
Packaging | Single wafer box or multi wafer box |
Usable area | ≥ 90 % |
Edge exclusion | 1 mm |
SiC Crystal Structure
SiC Crystal has many different crystal structures,which is called polytypes.The most common polytypes of SiC presently being developed for electronics are the cubic 3C-SiC, the hexagonal 4H-SiC and 6H-SiC, and the rhombohedral 15R-SiC. These polytypes are characterized by the stacking sequence of the biatom layers of the SiC structure.For more details, please enquire our engineer team.
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,weare devoted to continuously improve the quality of currently substrates and develop large size substrates.
SiC MicroElectromechanical Systems (MEMS) and Sensors
As described in Hesketh’s chapter on micromachining in this book, the development and use of siliconbased MEMS continues to expand. While the previous sections of this chapter have centered on the use of SiC for traditional semiconductor electronic devices, SiC is also expected to play a significant role in emerging MEMS applications . SiC has excellent mechanical properties that address some shortcomings of silicon-based MEMS such as extreme hardness and low friction reducing mechanical wear-out as well as excellent chemical inertness to corrosive atmospheres. For example, SiCs excellent durability is being examined as enabling for long-duration operation of electric micromotors and micro jet-engine power generation sources where the mechanical properties of silicon appear to be insufficient .
About Us
Responsibility is the assurance of quality, and quality is the life of corporation. We are looking forward to long term cooperation with customers, we will make best service and after sales service for all of our customers. If you have any inquiry, please don’t hesitate to contact us. We will reply you at the first time as we can.
After years of development, we have established perfect sales network and integrated after-sale service system at domestic and abroad, which enables the company to provide timely, accurate and efficient services, and won good customer reputations. The products are sold all over in China and exported to more than 30 countries and regions such as Europe, America, Southeast Asia, South America, Middle East and Africa. The production, sales volume and scale are all ranked first in the same industry.
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