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Semi Insulating SiC Silicon Carbide Substrate 6H Dummy Grade 10mmx10mm

Semi Insulating SiC Silicon Carbide Substrate 6H Dummy Grade 10mmx10mm

Semi Insulating SiC Silicon Carbide Substrate 6H Dummy Grade 10mmx10mm

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Price: By Case
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Name: Semi Insulating SIC Wafer Grade: Dummy Grade
Description: 6H SEMI Substrate Size: 10mm X 10mm
Keywords: Single Crystal SiC Silicon Carbide Wafer Application: Optoelectronic Industry

6H Semi-Insulating SiC Substrate, Dummy Grade,10mm x 10mm
 

SiC crystal growth

Bulk crystal growth is the technique for fabrication of single crystalline substrates , making the base for further device processing.To have a breakthrough in SiC technology obviously we need production of SiC substrate with a reproducible process.6H- and 4H- SiC crystals are grown in graphite crucibles at high temperatures up to 2100—2500°C. The operating temperature in the crucible is provided either by inductive (RF) or resistive heating. The growth occurs on thin SiC seeds. The source represents polycrystalline SiC powder charge. The SiC vapor in the growth chamber mainly consists of three species, namely, Si, Si2C, and SiC2, which are diluted by carrier gas, for example, Argon. The SiC source evolution includes both time variation of porosity and granule diameter and graphitization of the powder granules.

 

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SILICON CARBIDE MATERIAL PROPERTIES

PolytypeSingle Crystal 4HSingle Crystal 6H
Lattice Parametersa=3.076 Åa=3.073 Å
 c=10.053 Åc=15.117 Å
Stacking SequenceABCBABCACB
Band-gap3.26 eV3.03 eV
Density3.21 · 103 kg/m33.21 · 103 kg/m3
Therm. Expansion Coefficient4-5×10-6/K4-5×10-6/K
Refraction Indexno = 2.719no = 2.707
 ne = 2.777ne = 2.755
Dielectric Constant9.69.66
Thermal Conductivity490 W/mK490 W/mK
Break-Down Electrical Field2-4 · 108 V/m2-4 · 108 V/m
Saturation Drift Velocity2.0 · 105 m/s2.0 · 105 m/s
Electron Mobility800 cm2/V·S400 cm2/V·S
hole Mobility115 cm2/V·S90 cm2/V·S
Mohs Hardness~9~9

 

PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide) wafer for electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available.
 

6H Semi-Insulating SiC Substrate, Dummy Grade,10mm x 10mm

SUBSTRATE PROPERTYS6H-51-SI-PWAM-250 S6H-51-SI-PWAM-330 S6H-51-SI-PWAM-430
DescriptionDummy Grade 6H SEMI Substrate
Polytype6H
Diameter(50.8 ± 0.38) mm
Thickness(250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
Resistivity (RT)>1E5 Ω·cm
Surface Roughness< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM<50 arcsec
Micropipe DensityA+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
Surface Orientation
On axis <0001>± 0.5°
Off axis 3.5° toward <11-20>± 0.5°
Primary flat orientationParallel {1-100} ± 5°
Primary flat length16.00 ± 1.70 mm
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length8.00 ± 1.70 mm
Surface FinishSingle or double face polished
PackagingSingle wafer box or multi wafer box
Usable area≥ 90 %
Edge exclusion1 mm

 
 

SiC Insulators: Thermal Oxides and MOS Technology

 

The vast majority of semiconductor-integrated circuit chips in use today rely on silicon metal-oxide–

semiconductor field-effect transistors (MOSFETs), whose electronic advantages and operational

device physics are summarized in Katsumata’s chapter and elsewhere . Given the extreme

usefulness and success of inversion channel MOSFET-based electronics in VLSI silicon (as well as

discrete silicon power devices), it is naturally desirable to implement high-performance inversion

channel MOSFETs in SiC. Like silicon, SiC forms a thermal Semi Insulating SiC Silicon Carbide Substrate 6H Dummy Grade 10mmx10mm when it is sufficiently heated in an

oxygen environment. While this enables SiC MOS technology to somewhat follow the highly successful

path of silicon MOS technology, there are nevertheless important differences in insulator quality and

device processing that are presently preventing SiC MOSFETs from realizing their full beneficial

potential. While the following discourse attempts to quickly highlight key issues facing SiC MOSFET

development, more detailed insights can be found in References 133–142.
 
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