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4 Inch Silicon Wafer Semi Insulating Silicon Substrate Research Grade

4 Inch Silicon Wafer Semi Insulating Silicon Substrate Research Grade

4 Inch Silicon Wafer Semi Insulating Silicon Substrate Research Grade

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Place of Origin: China
Brand Name: PAM-XIAMEN

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Minimum Order Quantity: 1-10,000pcs
Price: By Case
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Name: Semi Insulating Silicon Carbide Wafer Grade: Research Grade
Description: 4H SEMI Substrate Size: 10mm X 10mm
Keywords: Single Crystal SiC Wafer Application: Electronic Industry
Primary Flat Length: 16.00 ± 1.70 Mm Secondary Flat Length: 8.00 ± 1.70 Mm
High Light:

semi standard wafer

,

sic wafer

4H Semi-Insulating Silicon Substrate, Research Grade,10mm x 10mm

 

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SILICON CARBIDE MATERIAL PROPERTIES

Polytype Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å a=3.073 Å
  c=10.053 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 · 103 kg/m3 3.21 · 103 kg/m3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index no = 2.719 no = 2.707
  ne = 2.777 ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/mK 490 W/mK
Break-Down Electrical Field 2-4 · 108 V/m 2-4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~9 ~9

 

4H Semi-Insulating Silicon Substrate, Research Grade,10mm x 10mm

SUBSTRATE PROPERTY S4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430
Description Research Grade 4H SEMI Substrate
Polytype 4H
Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
Resistivity (RT) >1E5 Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM <50 arcsec
Micropipe Density A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
Surface Orientation
On axis <0001>± 0.5°
Off axis 3.5° toward <11-20>± 0.5°
Primary flat orientation Parallel {1-100} ± 5°
Primary flat length 16.00 ± 1.70 mm
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 8.00 ± 1.70 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Usable area ≥ 90 %
Edge exclusion 1 mm

 

Single crystal SiC Properties

Here we compare property of Silicon Carbide, including Hexagonal SiC,CubicSiC,Single crystal SiC.

Property of Silicon Carbide (SiC)

Comparision of Property of Silicon Carbide, including Hexagonal SiC,Cubic SiC,Single crystal SiC:

 

Property Value Conditions
Density 3217 kg/m^3 hexagonal
Density 3210 kg/m^3 cubic
Density 3200 kg/m^3 Single crystal
Hardness,Knoop(KH) 2960 kg/mm/mm 100g,Ceramic,black
Hardness,Knoop(KH) 2745 kg/mm/mm 100g,Ceramic,green
Hardness,Knoop(KH) 2480 kg/mm/mm Single crystal.
Young's Modulus 700 GPa Single crystal.
Young's Modulus 410.47 GPa Ceramic,density=3120 kg/m/m/m, at room temperature
Young's Modulus 401.38 GPa Ceramic,density=3128 kg/m/m/m, at room temperature
Thermal conductivity 350 W/m/K Single crystal.
Yield strength 21 GPa Single crystal.
Heat capacity 1.46 J/mol/K Ceramic,at temp=1550 C.
Heat capacity 1.38 J/mol/K Ceramic,at temp=1350 C.
Heat capacity 1.34 J/mol/K Ceramic,at temp=1200 C.
Heat capacity 1.25 J/mol/K Ceramic,at temp=1000 C.
Heat capacity 1.13 J/mol/K Ceramic,at temp=700 C.
Heat capacity 1.09 J/mol/K Ceramic,at temp=540 C.
Electrical resistivity 1 .. 1e+10 Ω*m Ceramic,at temp=20 C
Compressive strength 0.5655 .. 1.3793 GPa Ceramic,at temp=25 C
Modulus of Rupture 0.2897 GPa Ceramic,with 1 wt% B addictive
Modulus of Rupture 0.1862 GPa Ceramifc,at room temperature
Poisson's Ratio 0.183 .. 0.192 Ceramic,at room temperature,density=3128 kg/m/m/m
Modulus of Rupture 0.1724 GPa Ceramic,at temp=1300 C
Modulus of Rupture 0.1034 GPa Ceramic,at temp=1800 C
Modulus of Rupture 0.07586 GPa Ceramic,at temp=1400 C
Tensile strength 0.03448 .. 0.1379 GPa Ceramic,at temp=25 C

 

* Reference:CRC Materials Science and Engineering Handbook

Comparision of Property of single crystal SiC, 6H and 4H:

Property Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å a=3.073 Å
c=10.053 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 · 103 kg/m3 3.21 · 103 kg/m3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index no = 2.719 no = 2.707
ne = 2.777 ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/mK 490 W/mK
Break-Down Electrical Field 2-4 · 108 V/m 2-4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~9 ~9

 

* Reference:Xiamen Powerway Advanced Material Co.,Ltd.

Comparision of property of 3C-SiC,4H-SiC and 6H-SiC:

Si-C Polytype 3C-SiC 4H-SiC 6H-SiC
Crystal structure Zinc blende (cubic) Wurtzite ( Hexagonal) Wurtzite ( Hexagonal)
Group of symmetry T2d-F43m C46v-P63mc C46v-P63mc
Bulk modulus 2.5 x 1012 dyn cm-2 2.2 x 1012 dyn cm-2 2.2 x 1012 dyn cm-2
Linear thermal expansion coefficient 2.77 (42) x 10-6 K-1    
Debye temperature 1200 K 1300 K 1200 K
Melting point 3103 (40) K 3103 ± 40 K 3103 ± 40 K
Density 3.166 g cm-3 3.21 g cm-3 3.211 g cm-3
Hardness 9.2-9.3 9.2-9.3 9.2-9.3
Surface microhardness 2900-3100 kg mm-2 2900-3100 kg mm-2 2900-3100 kg mm-2
Dielectric constant (static) ε0 ~= 9.72 The value of 6H-SiC dielectric constant is usually used ε0,ort ~= 9.66
Infrared refractive index ~=2.55 ~=2.55 (c axis) ~=2.55 (c axis)
Refractive index n(λ) n(λ)~= 2.55378 + 3.417 x 104·λ-2 n0(λ)~= 2.5610 + 3.4 x 104·λ-2 n0(λ)~= 2.55531 + 3.34 x 104·λ-2
ne(λ)~= 2.6041 + 3.75 x 104·λ-2 ne(λ)~= 2.5852 + 3.68 x 104·λ-2
Radiative recombination coefficient   1.5 x 10-12 cm3/s 1.5 x 10-12 cm3/s
Optical photon energy 102.8 meV 104.2 meV 104.2 meV
Effective electron mass (longitudinal)ml 0.68mo 0.677(15)mo 0.29mo
Effective electron mass (transverse)mt 0.25mo 0.247(11)mo 0.42mo
Effective mass of density of states mcd 0.72mo 0.77mo 2.34mo
Effective mass of the density of states in one valley of conduction band mc 0.35mo 0.37mo 0.71mo
Effective mass of conductivity mcc 0.32mo 0.36mo 0.57mo
Effective hall mass of density of state mv? 0.6 mo ~1.0 mo ~1.0 mo
Lattice constant a=4.3596 A a = 3.0730 A a = 3.0730 A
b = 10.053 b = 10.053

 

 

SiC Material Properties


SILICON CARBIDE (SiC) materials are currently metamorphosing from research and development into a market driven manufacturing product. SiC substrates are currently used as the base for a large fraction of the world production of green, blue, and ultraviolet light-emitting diodes (LEDs). Emerging markets for SiC homoepitaxy include high-power switching devices and microwave devices for S and X band . Applications for heteroepitaxial GaN-based structures on SiC substrates include LEDs and microwave devices. These exciting device results stem primarily from the exploitation of the unique electrical and thermophysical properties offered by SiC compared to Si and GaAs. Among these are: a large bandgap for high-temperature operation and radiation resistance; high critical breakdown field for high-power output; high saturated electron velocity for high-frequency operation; significantly higher thermal conductivity for thermal management of high-power devices.

 

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