Home ProductsGallium Nitride Wafer

Si Doped Gallium Nitride Wafer Sapphire Substrates For GaN Transistor 10*10mm2

Si Doped Gallium Nitride Wafer Sapphire Substrates For GaN Transistor 10*10mm2

Si Doped Gallium Nitride Wafer Sapphire Substrates For GaN Transistor 10*10mm2

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Price: By Case
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
Contact Now
Detailed Product Description
Item: PAM-T-GaN-10-N Product Name: 10*10mm2 SI-Doped GaN/Sapphire Substrates
Conduction Type: N-type Dimension: 10X10 Mm
Thickness: 5 ±1 μm Other Name: GaN Wafer

10*10mm2 Si-Doped GaN / Sapphire Substrates For GaN Transistor

 

Here shows detail specification:

10*10mm2 SI-Doped GaN/Sapphire Substrates

Item PAM-T-GaN-10-N
Dimension 10X10 mm
Thickness 5 ±1 μm
Orientation of GaN C plane (0001) off angle toward A-axis 0.2 ±0.1°
Orientation Flat of GaN (1-100) 0 ±0.2°, 16 ±1 mm
Conduction Type N-type
Resistivity (300K) < 0.05 Ω·cm
Carrier Concentration >1x1018cm-3(≈doping concentration)
Mobility ~ 200cm2 / V·s
Dislocation Density > 5x108cm-2(estimated by FWHMs of XRD)
Structure 5 ±1 μm GaN/~ 50 nm uGaN buffer layer/430 ±25 μm sapphire
Orientation of Sapphire C plane (0001) off angle toward M-axis 0.2 ±0.1°
Orientation Flat of Sapphire (11-20) 0 ±0.2°, 16 ±1 mm
Surface Roughness: Front side: Ra<0.5nm, epi-ready;
Back side: etched or polished.
Useable Area > 90% (edge and macro defects exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10*10mm2 Si-Doped GaN/Sapphire Substrates

FWHM and XRD report

 

A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing equipment,micropipe density by polarizing microscope, orientation by X-ray Orientator etc. if the wafers meet the requirement, we will clean and pack them in 100 class clean room, if the wafers do not match the custom spec, we will take it off.

 

About Us

 

PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial device layers, with better structural quality and higher thermal conductivity,which can improve devices in the cost, yield, and performance.

 

PAM-XIAMEN’sGaN on sapphire templates are available in diameters from 2" up to 6",and consist of a thin layer of crystalline GaN grown on a sapphire substrate. Epi-ready templates now available..

 

Below is an example of FWHM and XRD of AlN template:

Si Doped Gallium Nitride Wafer Sapphire Substrates For GaN Transistor 10*10mm2

FWHM and XRD of AlN template

Si Doped Gallium Nitride Wafer Sapphire Substrates For GaN Transistor 10*10mm2

 

FWHM and XRD of AlN template

 

Figure 2 shows a comparison of the typical XRD patterns of GaN (0002) films grown on different substrates. It can be seen that there is a variation in the FWHM value of the (0002) diffraction peak, and intensities of the GaN diffraction peak on the different substrates were obtained at around 34.5 degrees. The intensity of GaN (0002) in sample A is the strongest among all samples, which indicates that the GaN films on the GaN/sapphire template are highly c-oriented and have better crystalline quality. The FWHM of GaN (0002) values for samples A, B, C, and D were measured at 0.19◦ , 0.51◦ , 0.79◦ , and 1.09◦ , respectively. However, the XRD peak intensity increases as FWHM decreases; this is attributed to the increase in the crystallite size due to either the aggregation of small grains or grain boundary movement during the growth process. Since the FWHM of the XRD diffraction peak is relative to the average crystallite grain size in the film [26], the grain size of GaN grown on the different substrates is calculated using the Debye-Scherer equation [27]: D = 0.9λ/FWHMcosθ (1) where D is the crystallite size, λ is the X-ray wavelength, and θ is the diffraction angle. The crystallite sizes of samples A, B, C, and D are estimated to be 57, 20, 13, and 9 nm, respectively. These results indicate that the crystalline quality of GaN films grown on samples A and B is better than that of the films grown on samples C and D. Appl. Sci. 2017, 7, 87 3 of 9 GaN/sapphire template are highly c‐oriented and have better crystalline quality. The FWHM of GaN (0002) values for samples A, B, C, and D were measured at 0.19°, 0.51°, 0.79°, and 1.09°, respectively. However, the XRD peak intensity increases as FWHM decreases; this is attributed to the increase in the crystallite size due to either the aggregation of small grains or grain boundary movement during the growth process. Since the FWHM of the XRD diffraction peak is relative to the average crystallite grain size in the film [26], the grain size of GaN grown on the different substrates is calculated using the Debye‐Scherer equation [27]: D = 0.9λ/FWHMcos θ (1) where D is the crystallite size, λ is the X‐ray wavelength, and θ is the diffraction angle. The crystallite sizes of samples A, B, C, and D are estimated to be 57, 20, 13, and 9 nm, respectively. These results indicate that the c Figure

 

Si Doped Gallium Nitride Wafer Sapphire Substrates For GaN Transistor 10*10mm2

2. X-ray diffraction (XRD) measurements results of GaN films grown on different substrates

 

About Us

 

Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.

 

We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.

 

 

Contact Details
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Send your inquiry directly to us (0 / 3000)

Other Products