|Place of Origin:||China|
|Minimum Order Quantity:||1-10,000pcs|
|Packaging Details:||Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere|
|Delivery Time:||5-50 working days|
|Supply Ability:||10,000 wafers/month|
|Item:||PAM-T-GaN-10-N||Product Name:||10*10mm2 SI-Doped GaN/Sapphire Substrates|
|Conduction Type:||N-type||Dimension:||10X10 Mm|
|Thickness:||5 ±1 μm||Other Name:||GaN Wafer|
10*10mm2 Si-Doped GaN / Sapphire Substrates For GaN Transistor
Here shows detail specification:
10*10mm2 SI-Doped GaN/Sapphire Substrates
|Thickness||5 ±1 μm|
|Orientation of GaN||C plane (0001) off angle toward A-axis 0.2 ±0.1°|
|Orientation Flat of GaN||(1-100) 0 ±0.2°, 16 ±1 mm|
|Resistivity (300K)||< 0.05 Ω·cm|
|Carrier Concentration||>1x1018cm-3(≈doping concentration)|
|Mobility||~ 200cm2 / V·s|
|Dislocation Density||> 5x108cm-2(estimated by FWHMs of XRD)|
|Structure||5 ±1 μm GaN/~ 50 nm uGaN buffer layer/430 ±25 μm sapphire|
|Orientation of Sapphire||C plane (0001) off angle toward M-axis 0.2 ±0.1°|
|Orientation Flat of Sapphire||(11-20) 0 ±0.2°, 16 ±1 mm|
|Surface Roughness:||Front side: Ra<0.5nm, epi-ready;
Back side: etched or polished.
|Useable Area||> 90% (edge and macro defects exclusion)|
|Package||each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room|
10*10mm2 Si-Doped GaN/Sapphire Substrates
FWHM and XRD report
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing equipment,micropipe density by polarizing microscope, orientation by X-ray Orientator etc. if the wafers meet the requirement, we will clean and pack them in 100 class clean room, if the wafers do not match the custom spec, we will take it off.
PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial device layers, with better structural quality and higher thermal conductivity,which can improve devices in the cost, yield, and performance.
PAM-XIAMEN’sGaN on sapphire templates are available in diameters from 2" up to 6",and consist of a thin layer of crystalline GaN grown on a sapphire substrate. Epi-ready templates now available..
Below is an example of FWHM and XRD of AlN template:
FWHM and XRD of AlN template
FWHM and XRD of AlN template
Figure 2 shows a comparison of the typical XRD patterns of GaN (0002) films grown on different substrates. It can be seen that there is a variation in the FWHM value of the (0002) diffraction peak, and intensities of the GaN diffraction peak on the different substrates were obtained at around 34.5 degrees. The intensity of GaN (0002) in sample A is the strongest among all samples, which indicates that the GaN films on the GaN/sapphire template are highly c-oriented and have better crystalline quality. The FWHM of GaN (0002) values for samples A, B, C, and D were measured at 0.19◦ , 0.51◦ , 0.79◦ , and 1.09◦ , respectively. However, the XRD peak intensity increases as FWHM decreases; this is attributed to the increase in the crystallite size due to either the aggregation of small grains or grain boundary movement during the growth process. Since the FWHM of the XRD diffraction peak is relative to the average crystallite grain size in the film , the grain size of GaN grown on the different substrates is calculated using the Debye-Scherer equation : D = 0.9λ/FWHMcosθ (1) where D is the crystallite size, λ is the X-ray wavelength, and θ is the diffraction angle. The crystallite sizes of samples A, B, C, and D are estimated to be 57, 20, 13, and 9 nm, respectively. These results indicate that the crystalline quality of GaN films grown on samples A and B is better than that of the films grown on samples C and D. Appl. Sci. 2017, 7, 87 3 of 9 GaN/sapphire template are highly c‐oriented and have better crystalline quality. The FWHM of GaN (0002) values for samples A, B, C, and D were measured at 0.19°, 0.51°, 0.79°, and 1.09°, respectively. However, the XRD peak intensity increases as FWHM decreases; this is attributed to the increase in the crystallite size due to either the aggregation of small grains or grain boundary movement during the growth process. Since the FWHM of the XRD diffraction peak is relative to the average crystallite grain size in the film , the grain size of GaN grown on the different substrates is calculated using the Debye‐Scherer equation : D = 0.9λ/FWHMcos θ (1) where D is the crystallite size, λ is the X‐ray wavelength, and θ is the diffraction angle. The crystallite sizes of samples A, B, C, and D are estimated to be 57, 20, 13, and 9 nm, respectively. These results indicate that the c Figure
2. X-ray diffraction (XRD) measurements results of GaN films grown on different substrates
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