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10*10mm2 GaN Gallium Nitride Wafer N Type Wafer For Gallium Nitride Devices

10*10mm2 GaN Gallium Nitride Wafer N Type Wafer For Gallium Nitride Devices

10*10mm2 GaN Gallium Nitride Wafer N Type Wafer For Gallium Nitride Devices

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Price: By Case
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Dimension: 10X10 Mm Item: PAM-T-GaN-10-U
Product Name: 10*10mm2 Undoped GaN/Sapphire Substrates Conduction Type: N-type
Other Name: GaN Wafer Thickness: 5 ±1 μm
Useable Area: > 90% (edge And Macro Defects Exclusion) Orientation Flat Of Sapphire: (11-20) 0 ±0.2°, 16 ±1 Mm

10*10mm2 Undoped Epigan On Sapphire Substrates For Gallium Nitride Devices

 

Here shows detail specification:

10*10mm2 Undoped GaN/Sapphire Substrates

Item PAM-T-GaN-10-U
Dimension 10X10 mm
Thickness 5 ±1 μm
Orientation of GaN C plane (0001) off angle toward A-axis 0.2 ±0.1°
Orientation Flat of GaN (1-100) 0 ±0.2°, 16 ±1 mm
Conduction Type N-type
Resistivity (300K) < 0.5 Ω·cm
Carrier Concentration <5X1017CM-3
Mobility ~ 300cm2 / V·s
Dislocation Density < 5x108cm-2(estimated by FWHMs of XRD)
Structure 5 ±1 μm GaN/~ 50 nm uGaN buffer layer/430 ±25 μm sapphire
Orientation of Sapphire C plane (0001) off angle toward M-axis 0.2 ±0.1°
Orientation Flat of Sapphire (11-20) 0 ±0.2°, 16 ±1 mm
Surface Roughness: Front side: Ra<0.5nm, epi-ready;
Back side: etched or polished.
Useable Area > 90% (edge and macro defects exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10*10mm2 Undoped GaN/Sapphire Substrates

 

Testing Project: FWHM and XRD project

The half-height full width (FWHM) is an expression of the range of functions given by the difference between two extreme values of the independent variable equal to half of its maximum. In other words, it is the width of the spectral curve measured between those points on the Y-axis, which is half the maximum amplitude.

 

Below is an example of FWHM and XRD of AlN template:

10*10mm2 GaN Gallium Nitride Wafer N Type Wafer For Gallium Nitride Devices

FWHM and XRD of AlN template

10*10mm2 GaN Gallium Nitride Wafer N Type Wafer For Gallium Nitride Devices

 

FWHM and XRD of AlN template

 

Here we show experiment as an example:

Experiment on GaN on sapphire:Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition:

 

Experiment on GaN on sapphire:Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition:

All GaN film samples were deposited on different substrates by PLD at 1000 ◦C in a nitrogen plasma ambient atmosphere. The chamber was pumped down to 10−6 Torr before the deposition process began, and N2 gas (with a purity of 99.999%) was introduced. The working pressure once the N2 plasma was injected was 1.13 × 10−4 Torr. A KrF excimer laser (λ = 248 nm, Lambda Physik, Fort Lauderdale, FL, USA) was employed as the ablation source and operated with a repetition rate of 1 Hz and a pulse energy of 60 mJ. The average growth rate of the GaN film was approximately 1 µm/h. The laser beam was incident on a rotating target at an angle of 45◦ . The GaN target was fabricated by HVPE and set at a fixed distance of 9 cm from the substrate before being rotated at 30 rpm during film deposition. In this case, ~4 µm-thick GaN films were grown on a GaN/sapphire template (sample A), sapphire (sample B), Si(111) (sample C), and Si(100) (sample D). For the GaN on sample A, a 2-µm GaN layer was firstly deposited on sapphire substrate by MOCVD. Scanning electron microscopy (SEM, S-3000H, Hitachi, Tokyo, Japan), transmission electron microcopy (TEM, H-600, Hitachi, Tokyo, Japan), atomic force microscopy (AFM, DI-3100, Veeco, New York, NY, USA), double-crystal X-ray diffraction (XRD, X’Pert PRO MRD, PANalytical, Almelo, The Netherlands), low-temperature photoluminescence (PL, Flouromax-3, Horiba, Tokyo, Japan), and Raman spectroscopy (Jobin Yvon, Horiba, Tokyo, Japan) were employed to explore the microstructure and optical properties of the GaN templates deposited on different substrates. The electrical properties of the GaN films were determined by Van der Pauw-Hall measurement under liquid nitrogen cooling at 77 K

 

Conclusion: the GaN thick films grown on a GaN/sapphire template, sapphire, Si(111), and Si(100) by high-temperature PLD. The substrate effect on GaN crystalline growth quality, surface morphology, stress behavior, and interface property were studied, if you need more product information, please enquire us.

 

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