Home ProductsGallium Nitride Wafer

Mg Doped Epitaxial Gallium Nitride Wafer 10*10mm2 For GaN Power Amplifier

Mg Doped Epitaxial Gallium Nitride Wafer 10*10mm2 For GaN Power Amplifier

Mg Doped Epitaxial Gallium Nitride Wafer 10*10mm2 For GaN Power Amplifier

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Price: By Case
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
Contact Now
Detailed Product Description
Item: PAM-T-GaN-10-P Product Name: 10*10mm2 Mg-Doped GaN/Sapphire Substrates
Conduction Type: P-type Dimension: 10X10 Mm
Thickness: 5 ±1 μm Other Name: GaN Wafer

10*10mm2 Mg-Doped GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier

 

FWHM and XRD report

A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing equipment,micropipe density by polarizing microscope, orientation by X-ray Orientator etc. if the wafers meet the requirement, we will clean and pack them in 100 class clean room, if the wafers do not match the custom spec, we will take it off.

 

Testing Project: FWHM and XRD project

The half-height full width (FWHM) is an expression of the range of functions given by the difference between two extreme values of the independent variable equal to half of its maximum. In other words, it is the width of the spectral curve measured between those points on the Y-axis, which is half the maximum amplitude.

 

Here shows detail specification:

10*10mm2 Mg-Doped GaN/Sapphire Substrates

Item PAM-T-GaN-10-P
Dimension 10X10mm
Thickness 5 ±1 μm
Orientation of GaN C plane (0001) off angle toward A-axis 0.2 ±0.1°
Orientation Flat of GaN (1-100) 0 ±0.2°, 16 ±1 mm
Conduction Type P-type
Resistivity (300K) ~ 10 Ω·cm
Carrier Concentration >6X1016CM-3(doping concentration≥10x1020cm-3
Mobility ~ 10cm2 / V·s
Dislocation Density < 5x108cm-2(estimated by FWHMs of XRD)
Structure 2~2.5 μm pGaN/2~2.5 μm pGaN uGaN/50nm uGaN buffer layer/430±25μm
Orientation of Sapphire C plane (0001) off angle toward M-axis 0.2 ±0.1°
Orientation Flat of Sapphire (11-20) 0 ±0.2°, 16 ±1 mm
Surface Roughness: Front side: Ra<0.5nm, epi-ready;
Back side: etched or polished.
Useable Area > 90% (edge and macro defects exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Below is an example of FWHM and XRD of AlN template:

Mg Doped Epitaxial Gallium Nitride Wafer 10*10mm2 For GaN Power Amplifier

FWHM and XRD of AlN template

Mg Doped Epitaxial Gallium Nitride Wafer 10*10mm2 For GaN Power Amplifier

 

FWHM and XRD of AlN template

Here we show experiment as an example:

Experiment on GaN on sapphire:Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition:

 

Experiment on GaN on sapphire:Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition:

All GaN film samples were deposited on different substrates by PLD at 1000 ◦C in a nitrogen plasma ambient atmosphere. The chamber was pumped down to 10−6 Torr before the deposition process began, and N2 gas (with a purity of 99.999%) was introduced. The working pressure once the N2 plasma was injected was 1.13 × 10−4 Torr. A KrF excimer laser (λ = 248 nm, Lambda Physik, Fort Lauderdale, FL, USA) was employed as the ablation source and operated with a repetition rate of 1 Hz and a pulse energy of 60 mJ. The average growth rate of the GaN film was approximately 1 µm/h. The laser beam was incident on a rotating target at an angle of 45◦ . The GaN target was fabricated by HVPE and set at a fixed distance of 9 cm from the substrate before being rotated at 30 rpm during film deposition. In this case, ~4 µm-thick GaN films were grown on a GaN/sapphire template (sample A), sapphire (sample B), Si(111) (sample C), and Si(100) (sample D). For the GaN on sample A, a 2-µm GaN layer was firstly deposited on sapphire substrate by MOCVD. Scanning electron microscopy (SEM, S-3000H, Hitachi, Tokyo, Japan), transmission electron microcopy (TEM, H-600, Hitachi, Tokyo, Japan), atomic force microscopy (AFM, DI-3100, Veeco, New York, NY, USA), double-crystal X-ray diffraction (XRD, X’Pert PRO MRD, PANalytical, Almelo, The Netherlands), low-temperature photoluminescence (PL, Flouromax-3, Horiba, Tokyo, Japan), and Raman spectroscopy (Jobin Yvon, Horiba, Tokyo, Japan) were employed to explore the microstructure and optical properties of the GaN templates deposited on different substrates. The electrical properties of the GaN films were determined by Van der Pauw-Hall measurement under liquid nitrogen cooling at 77 K

 

About Us

 

Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.

 

We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.

 

Contact Details
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Send your inquiry directly to us (0 / 3000)

Other Products