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Freestanding GaN Gallium Nitride Substrate N Type Semi Insulating For RF

Freestanding GaN Gallium Nitride Substrate N Type Semi Insulating For RF

Freestanding GaN Gallium Nitride Substrate N Type Semi Insulating For RF

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Price: By Case
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Orientation: C-axis(0001)+/-0.5° Primary Flat Location: (1-100)+/-0.5°
Thickness: 330-450um Secondary Flat Length: 8+/-1mm
Primary Flat Length: 16+/-1mm Secondary Flat Location: (11-20)+/-3°

Freestanding GaN Substrate, N Type, Semi-Insulating For Rf,Power,Led And Ld

 

Specification of Freestanding GaN substrate

Here shows detail specification:

2″(50.8mm)Free-standing (gallium nitride) GaN Substrate

Item PAM-FS-GaN50-N PAM-FS-GaN50-SI
Conduction Type N-type Semi-insulating
Size 2″(50.8)+/-1mm
Thickness 330-450um
Orientation C-axis(0001)+/-0.5°
Primary Flat Location (1-100)+/-0.5°
Primary Flat Length 16+/-1mm
Secondary Flat Location (11-20)+/-3°
Secondary Flat Length 8+/-1mm
Resistivity(300K) <0.5Ω·cm >106Ω·cm
Dislocation Density <5x106cm-2
Marco Defect Density A grade<=2cm-2 B grade>2cm-2
TTV <=15um
BOW <=20um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
  Back Surface:1.Fine ground
2.Rough grinded
Usable Area ≥ 90 %

 

Freestanding GaN Gallium Nitride Substrate N Type Semi Insulating For RF

1.5″(38.1mm)Free-standing GaN Substrate

Item PAM-FS-GaN38-N PAM-FS-GaN38-SI
Conduction Type N-type Semi-insulating
Size 1.5″(38.1)+/-0.5mm
Thickness 330-450um
Orientation C-axis(0001)+/-0.5o
Primary Flat Location (1-100)+/-0.5o
Primary Flat Length 12+/-1mm
Secondary Flat Location (11-20)+/-3o
Secondary Flat Length 6+/-1mm
Resistivity(300K) <0.5Ω·cm >106Ω·cm
Dislocation Density <5x106cm-2
Marco Defect Density A grade<=2cm-2 B grade>2cm-2
TTV <=15um
BOW <=20um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
 

Back Surface:1.Fine ground

2.Rough grinded

   
Usable Area ≥ 90 %

 

Freestanding GaN Gallium Nitride Substrate N Type Semi Insulating For RF

15mm,10mm,5mm Free-standing GaN Substrate

Item

PAM-FS-GaN15-N

PAM-FS-GaN10-N

PAM-FS-GaN5-N

PAM-FS-GaN15-SI

PAM-FS-GaN10-SI

PAM-FS-GaN5-SI

Conduction Type N-type Semi-insulating
Size 14.0mm*15mm 10.0mm*10.5mm 5.0*5.5mm
Thickness 330-450um
Orientation C-axis(0001)+/-0.5o
Primary Flat Location  
Primary Flat Length  
Secondary Flat Location  
Secondary Flat Length  
Resistivity(300K) <0.5Ω·cm >106Ω·cm
Dislocation Density <5x106cm-2
Marco Defect Density 0cm-2
TTV <=15um
BOW <=20um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
  Back Surface:1.Fine ground
    2.Rough grinded
Usable Area ≥ 90 %
       

 

Freestanding GaN Gallium Nitride Substrate N Type Semi Insulating For RF Freestanding GaN Gallium Nitride Substrate N Type Semi Insulating For RF

Application of GaN Substrate

 

Solid State Lighting:GaN devices are used as ultra high brightness light emitting diodes (LEDs), TVs, automobiles, and general lighting

 

DVD Storage: Blue laser diodes

Power Device: GaN devices are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN’s low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites

Ideal for III-Nitrides re-growth

 

Wireless Base Stations: RF power transistors

Wireless Broadband Access: high frequency MMICs,RF-Circuits MMICs

Pressure Sensors:MEMS

 

Heat Sensors: Pyro-electric detectors

Power Conditioning: Mixed signal GaN/Si Integration

Automotive Electronics: High temperature electronics

Power Transmission Lines: High voltage electronics

Frame Sensors: UV detectors

Solar Cells:GaN’s wide band gap covers the solar spectrum from 0.65 eV to 3.4 eV (which is practically the entire solar spectrum), making indium gallium nitride

 

About Us

 

Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.

 

We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.

 

Contact Details
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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