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2 Inch Gallium Nitride Wafer Bulk GaN Substrates For LED HEMT Structure

2 Inch Gallium Nitride Wafer Bulk GaN Substrates For LED HEMT Structure

2 Inch Gallium Nitride Wafer Bulk GaN Substrates For LED HEMT Structure

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Price: By Case
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Thickness: 350 ±25 μm 430±25μm Item: PAM-FS-GAN-50-N
Conduction Type: N-type Product Name: Gallium Nitride Substrate Wafer
Other Name: GaN Wafer Dimension: 50.8 ±1 Mm
TTV: < 0.05 Ω·cm BOW: -20 μm ≤ BOW ≤ 20 μm

2 Inch Freestanding N-GaN Bulk GaN Substrates For LED,LD Or HEMT Structure

 

2inch Freestanding N-GaN GaN Substrates

The growing demand for high-speed, high-temperature and high power-handling capabilities has made the semiconductor industry rethink the choice of materials used as semiconductors. For instance, as various faster and smaller computing devices arise, the use of silicon is making it difficult to sustain Moore’s Law. But also in power electronics, the properties of silicon are no longer sufficient to allow further improvements in conversion efficiency.

 

Here shows detail specification:

2inch Freestanding N-GaN GaN Substrates

Item PAM-FS-GaN-50-N
Dimension 50.8 ±1 mm
Thickness 350 ±25 μm 430±25μm
Orientation C plane (0001) off angle toward M-axis 0.35 ±0.15°
Orientation Flat (1-100) 0 ±0.5°, 16 ±1 mm
Secondary Orientation Flat (11-20) 0 ±3°, 8 ±1 mm
Conduction Type N-type
Resistivity (300K)

>106 Ω·cm

TTV < 0.05 Ω·cm
BOW -20 μm ≤ BOW ≤ 20 μm
Surface Roughness:

Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.

Dislocation Density From 1 x 105 to 5 x 10 6cm -2(calculated by CL)*
Macro Defect Density < 2 cm-2
Useable Area > 90% (edge and macro defects exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Transmitance-GaN material-TEST REPORT

 

A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing equipment,micropipe density by polarizing microscope, orientation by X-ray Orientator etc. if the wafers meet the requirement, we will clean and pack them in 100 class clean room, if the wafers do not match the custom spec, we will take it off.

 

The transmittance of the wafer surface is the effectiveness of its transmission of radiative energy. Compared with the transmission coefficient, it is the fraction of the incident electromagnetic power transmitted through the sample, and the transmission coefficient is the ratio of the transmitted electric field to the incident electric field.

 

Service

 

7X24-hour Telephone Consulting Service is available.

Reply and solution will be provided in 8 hours upon customer’s service request.

After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.

 

Quality inspection from raw material to production, and delivery.

Professional quality control person, to avoid the unqualified products flowing to customer.

Strict inspection to Raw material, production, and delivery.

Full series of equipment in quality laboratory.

 

2 Inch Gallium Nitride Wafer Bulk GaN Substrates For LED HEMT Structure

Transmitance of GaN material

 

Contact Details
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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