 |
| Place of Origin: | China |
| Brand Name: | PAM-XIAMEN |
| Minimum Order Quantity: | 1-10,000pcs |
|---|---|
| Price: | By Case |
| Packaging Details: | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| Delivery Time: | 5-50 working days |
| Payment Terms: | T/T |
| Supply Ability: | 10,000 wafers/month |
| Conduction Type: | Semi-Insulating | Thickness: | 350 ±25 μm 430±25μm |
|---|---|---|---|
| Item: | PAM-FS-GAN-50-SI | Product Name: | SI-GaN Freestanding GaN Substrate |
| Dimension: | 10 X 10.5 Mm2 | Other Name: | GaN Wafer |
| TTV: | ≤ 10 µm | Macro Defect Density: | 0 Cm-2 |
10*10mm2 Si-GaN Freestanding GaN Substrate For Iii-Nitride LDs
10*10mm2 Si-GaN Freestanding GaN Substrate
The growing demand for high-speed, high-temperature and high power-handling capabilities has made the semiconductor industry rethink the choice of materials used as semiconductors. For instance, as various faster and smaller computing devices arise, the use of silicon is making it difficult to sustain Moore’s Law. But also in power electronics, the properties of silicon are no longer sufficient to allow further improvements in conversion efficiency.
Due to its unique characteristics (high maximum current, high breakdown voltage, and high switching frequency), Gallium Nitride (or GaN) is the unique material of choice to solve energy problems of the future. GaN based systems have higher power efficiency, thus reducing power losses, switch at higher frequency, thus reducing size and weight.
Here shows detail specification:
10*10mm2 Si-GaN Freestanding GaN Substrate
| Item | PAM-FS-GaN-50-SI |
| Dimension | 10 x 10.5 mm2 |
| Thickness | 350 ±25 µm 430±25 µm |
| Orientation | C plane (0001) off angle toward M-axis 0.35 ±0.15° |
| Conduction Type | Semi-Insulating |
| Resistivity (300K) | > 106 Ω.cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness: |
Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. |
| Dislocation Density | From 1 x 105 to 5x 106 cm-2 (calculated by CL)* |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
|
Package |
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
Surface Roughness-GaN material-TEST REPORT
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing equipment,micropipe density by polarizing microscope, orientation by X-ray Orientator etc. if the wafers meet the requirement, we will clean and pack them in 100 class clean room, if the wafers do not match the custom spec, we will take it off.
Surface roughness is usually shortened to roughness and is a component of surface texture. It is quantified by the deviation of the normal vector direction of the real surface from its ideal form. If these deviations are large, the surface is rough; If they’re small, the surface is smooth. In surface measurement, roughness is generally considered to be the high frequency short-wave length component of measuring scale surface. In practice, however, it is often necessary to know the amplitude and frequency to ensure that the surface is suitable for a purpose.
About Us
Responsibility is the assurance of quality, and quality is the life of corporation. We are looking forward to long term cooperation with customers, we will make best service and after sales service for all of our customers. If you have any inquiry, please don’t hesitate to contact us. We will reply you at the first time as we can.
After years of development, we have established perfect sales network and integrated after-sale service system at domestic and abroad, which enables the company to provide timely, accurate and efficient services, and won good customer reputations. The products are sold all over in China and exported to more than 30 countries and regions such as Europe, America, Southeast Asia, South America, Middle East and Africa. The production, sales volume and scale are all ranked first in the same industry.
Below is an example of surface roughness of GaN material:
A surface roughness-gan
4 Inch Indium Phosphide Wafer P Type Test Grade InP Epi Ready Wafer
Single Crystal Indium Phosphide Wafer High Purity 4 Inch Prime Grade
Fe Doped InP Test Grade Wafer 4" Semi Insulating Optical Sensing Application
2 Inch Gallium Nitride Wafer Bulk GaN Substrates For LED HEMT Structure
2 Inch GaN Gallium Nitride Substrates Freestanding High Frequency Devices Use
2 Inch Bulk U Gallium Nitride Wafer Epi Ready Wafer For GaN Laser Diode
6H N Type SiC Wafer Dummy Grade C 0001 Bulk Crystal Growth <50 Arcsec FWHM
On Axis Sic Silicon Carbide Wafer 4 Deg Off 4H N Type Production Grade
Research Grade Silicon Carbide Wafer 6H SiC Semi Standard Wafer Cmp Polished
