In 2008,The 2 inch silicon carbide wafer production line has successfully completed the technical debugging, now it realize the R & D and manufacturing of 6 inch SiC wafers for SBD, pin, MOSFET and other devices.
PAM-XIAMEN has internationally advanced MOCVD epitaxial furnace and epitaxial characterization equipment, 6-inch compound semiconductor chip production line, wafer in chip detection system, reliability testing system and application development system.: gallium nitride (GAN) semiconductor substrate materials, GaN / AI2O3 composite substrate, GaN single crystal substrate and hydride vapor phase epitaxy equipment (HVPE), etc. the monthly production capacity of 150 mm GaN on Si epitaxial wafers reaches 800wafers, and 4-8 inch GaN on SiC/sapphire epitaxial wafers have been successfully produced. The epitaxial wafer maintains the high crystal quality, high uniformity and high reliability of epitaxial materials, which can fully meet the application requirements of high-voltage power electronic devices in the industry.
PAM-XIAMEN has been on mass production of 6-inch 650 V silicon-based GaN epitaxial wafers for power electronics, which are mainly used in power management, solar inverter, electric vehicle and industrial motor drive and other fields. In the field of microwave and radio frequency, the company has carried out the development of silicon-based gallium nitride epitaxial materials, the R & D and industrial preparation of radio-frequency wafers have also been launched.
PAM-XIAMEN accept OEM or ODM order under NDA agreement, normally for epi serice, custom design is much often, as researchers and end users prefer to solve a fixed problem and they need to adjust design to adopt these fixed device.
R&D team, who is focusing on research and development and applied research (compared with basic research). Different from technology department, who is to solve difficult problems in production, R & D department is to research and develop new wafers, furthermore, the task of R&D to develop larger ingots, bigger wafer size but smaller defects and BOW etc.