|Place of Origin:||China|
|Minimum Order Quantity:||1-10,000pcs|
|Packaging Details:||Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere|
|Delivery Time:||5-50 working days|
|Supply Ability:||10,000 wafers/month|
|Conduction Type:||P Type||Wafer Thickness:||500±25um|
|Wafer Diamter:||2 Inch||Product Name:||P Type InAs Indium Arsenide Wafer|
|Grade:||Test Grade||Keyword:||InAs Wafer|
|Primary Flat Length:||16±2mm||Secondary Flat Length:||8±1mm|
n type wafer,
3 inch wafer
P Type , Zn-doped Single Crystal InAs Wafer , 2”, Test Grade
2" InAs Wafer Specification
|Primary Flat Length||16±2mm|
|Secondary Flat Length||8±1mm|
|Laser marking||upon request|
|Suface finish||P/E, P/P|
|Package||Single wafer container or cassette|
What is the InAs Process?
InAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.
|Energy gap||0.354 eV|
|Energy separation (EΓL) between Γ and L valleys||0.73 eV|
|Energy separation (EΓX) between Γ and X valleys||1.02 eV|
|Energy spin-orbital splitting||0.41 eV|
|Intrinsic carrier concentration||1·1015 cm-3|
|Intrinsic resistivity||0.16 Ω·cm|
|Effective conduction band density of states||8.7·1016 cm-3|
|Effective valence band density of states||6.6·1018 cm-3|
|Band structure and carrier concentration of InAs.
Important minima of the conduction band and maxima of the valence band.
Eg= 0.35 eV
EL= 1.08 eV
EX= 1.37 eV
Eso = 0.41 eV
Eg = 0.415 - 2.76·10-4·T2/(T+83) (eV),
where T is temperature in degrees K (0 <T < 300).
|The temperature dependences of the intrinsic carrier concentration.|
|Fermi level versus temperature for different concentrations of shallow donors and acceptors.|
Eg≈Eg(0) + 4.8·10-3P (eV)
EL≈ EL(0) + 3.2·10-3P (eV)
where P is pressure in kbar
|Energy gap narrowing versus donor (Curve 1) and acceptor (Curve 2 ) doping density.
Curves are calculated according
Points show experimental results for n-InAs
ΔEg = 14.0·10-9·Nd1/3 + 1.97·10-7·Nd1/4 + 57.9·10-12·Nd1/2 (eV)
ΔEg = 8.34·10-9·Na1/3 + 2.91·10-7·Na1/4 + 4.53·10-12·Na1/2 (eV)
|Electron effective mass versus electron concentration
|For Γ-valley||mΓ = 0.023mo|
E(1+αE) = h2k2/(2mΓ)
|α = 1.4 (eV-1)|
|In the L-valley effective mass of density of states||mL=0.29mo|
|In the X-valley effective mass of density of states||mX=0.64mo|
|Heavy||mh = 0.41mo|
|Light||mlp = 0.026mo|
|Split-off band||mso = 0.16mo|
Effective mass of density of states mv = 0.41mo
≥ 0.001(eV): Se, S, Te, Ge, Si, Sn, Cu
Are You Looking for an InAs Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including InAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!