Home ProductsIndium Arsenide Wafer

Zn Doped InAs Wafer Single Crystal 2 Inch Test Grade Wafer P Type

Zn Doped InAs Wafer Single Crystal 2 Inch Test Grade Wafer P Type

Zn Doped InAs Wafer Single Crystal 2 Inch Test Grade Wafer P Type

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
Contact Now
Detailed Product Description
Conduction Type: P Type Wafer Thickness: 500±25um
Wafer Diamter: 2 Inch Product Name: P Type InAs Indium Arsenide Wafer
Grade: Test Grade Keyword: InAs Wafer
Primary Flat Length: 16±2mm Secondary Flat Length: 8±1mm
High Light:

n type wafer

,

3 inch wafer

P Type , Zn-doped Single Crystal InAs Wafer , 2”, Test Grade

 

2" InAs Wafer Specification

Item Specifications
Dopant Zinc
Conduction Type P-type
Wafer Diameter 2"
Wafer Orientation (100)±0.5°
Wafer Thickness 500±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration (1-10)x1017cm-3
Mobility 100-400cm2/V.s
EPD <3x104cm-2
TTV <10um
BOW <10um
WARP <12um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

 

What is the InAs Process?

InAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.

Band structure and carrier concentration of InAs Wafer

Basic Parameters

Energy gap 0.354 eV
Energy separation (EΓL) between Γ and L valleys 0.73 eV
Energy separation (EΓX) between Γ and X valleys 1.02 eV
Energy spin-orbital splitting 0.41 eV
Intrinsic carrier concentration 1·1015 cm-3
Intrinsic resistivity 0.16 Ω·cm
Effective conduction band density of states 8.7·1016 cm-3
Effective valence band density of states 6.6·1018 cm-3

 

Zn Doped InAs Wafer Single Crystal 2 Inch Test Grade Wafer P Type Band structure and carrier concentration of InAs.
Important minima of the conduction band and maxima of the valence band.
Eg= 0.35 eV
EL= 1.08 eV
EX= 1.37 eV
Eso = 0.41 eV

Temperature Dependences

Temperature dependence of the direct energy gap

Eg = 0.415 - 2.76·10-4·T2/(T+83) (eV),

where T is temperature in degrees K (0 <T < 300).
 

Effective density of states in the conduction band

Nc≈1.68·1013·T3/2 (cm-3).

Effective density of states in the valence band

Nv≈ 1.27·1015·T3/2(cm-3).

Zn Doped InAs Wafer Single Crystal 2 Inch Test Grade Wafer P Type The temperature dependences of the intrinsic carrier concentration.
Zn Doped InAs Wafer Single Crystal 2 Inch Test Grade Wafer P Type Fermi level versus temperature for different concentrations of shallow donors and acceptors.

Dependences on Hydrostatic Pressure

Eg≈Eg(0) + 4.8·10-3P (eV)
EL≈ EL(0) + 3.2·10-3P (eV)

where P is pressure in kbar 

Energy Gap Narrowing at High Doping Levels

Zn Doped InAs Wafer Single Crystal 2 Inch Test Grade Wafer P Type Energy gap narrowing versus donor (Curve 1) and acceptor (Curve 2 ) doping density.
Curves are calculated according
Points show experimental results for n-InAs

For n-type InAs

ΔEg = 14.0·10-9·Nd1/3 + 1.97·10-7·Nd1/4 + 57.9·10-12·Nd1/2 (eV)

For p-type InAs

ΔEg = 8.34·10-9·Na1/3 + 2.91·10-7·Na1/4 + 4.53·10-12·Na1/2 (eV)

Effective Masses

Electrons:

Zn Doped InAs Wafer Single Crystal 2 Inch Test Grade Wafer P Type Electron effective mass versus electron concentration
 

 

For Γ-valley mΓ = 0.023mo
Nonparabolicity:
E(1+αE) = h2k2/(2mΓ)
α = 1.4 (eV-1)
In the L-valley effective mass of density of states mL=0.29mo
In the X-valley effective mass of density of states mX=0.64mo

Holes:

Heavy mh = 0.41mo
Light mlp = 0.026mo
Split-off band mso = 0.16mo

Effective mass of density of states mv = 0.41mo

Donors and Acceptors

Ionization energies of shallow donors

≥ 0.001(eV): Se, S, Te, Ge, Si, Sn, Cu

Ionization energies of shallow acceptors, eV

Sn Ge Si Cd Zn
0.01 0.014 0.02 0.015 0.01

 

Are You Looking for an InAs Wafer?

PAM-XIAMEN is your go-to place for everything wafers, including InAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

Contact Details
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Send your inquiry directly to us (0 / 3000)

Other Products