Home ProductsGallium Arsenide Wafer

Zn Doped Gallium Arsenide Wafer With Epi Ready 4" Prime Grade Single Crystal

Zn Doped Gallium Arsenide Wafer With Epi Ready 4" Prime Grade Single Crystal

Zn Doped Gallium Arsenide Wafer With Epi Ready 4" Prime Grade Single Crystal

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
Contact Now
Detailed Product Description
Product Name: Gallium Arsenide Wafer Wafer Diamter: 4 Inch
Conduction Type: SC/p-type With Zn Dope Available Grade: Prime Grade
Usage: LED Application Keyword: Single Crystal And Polycrystalline GaAs Wafer
Surface Finish: P/E Or P/P Package: Single Wafer Container Or Cassette
High Light:

n type silicon wafer

,

p type silicon wafer

P Type , Zn-Doped Gallium Arsenide Wafer With Epi-Ready, 4”, Prime Grade

 

(GaAs)Gallium Arsenide Wafers for LED Applications

Item Specifications  
Conduction Type SC/p-type with Zn dope Available
Growth Method VGF
Dopant Mg
Wafer Diamter 4, inch
Crystal Orientation (100)2°/6°/15° off (110)
OF EJ or US
Carrier Concentration E19
Resistivity at RT
Mobility

1500~3000cm2/V.sec

 

Etch Pit Density <5000/cm2
Laser Marking

upon request

 

Surface Finish

P/E or P/P

 

Thickness

220~450um

 

Epitaxy Ready Yes
Package Single wafer container or cassette

 

Properties of GaAs Crystal

Wavelength Index
(µm)
2.6 3.3239
2.8 3.3204
3 3.3169
3.2 3.3149
3.4 3.3129
3.6 3.3109
3.8 3.3089
4 3.3069
4.2 3.3057
4.4 3.3045
4.6 3.3034
4.8 3.3022
5 3.301
5.2 3.3001
5.4 3.2991
5.6 3.2982
5.8 3.2972
6 3.2963
6.2 3.2955
6.4 3.2947
6.6 3.2939
6.8 3.2931
7 3.2923
7.2 3.2914
7.4 3.2905
7.6 3.2896
7.8 3.2887
8 3.2878
8.2 3.2868
8.4 3.2859
8.6 3.2849
8.8 3.284
9 3.283
9.2 3.2818
9.4 3.2806
9.6 3.2794
9.8 3.2782
10 3.277
10.2 3.2761
10.4 3.2752
10.6 3.2743
10.8 3.2734
11 3.2725
11.2 3.2713
11.4 3.2701
11.6 3.269
11.8 3.2678
12 3.2666
12.2 3.2651
12.4 3.2635
12.6 3.262
12.8 3.2604
13 3.2589
13.2 3.2573
13.4 3.2557
13.6 3.2541

 

PAM-XIAMEN provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for opto-electronics and micro-electronics industry for making LD , LED , microwave circuit and solar cell applications , the wafers is in diameter range from 2" to 6" in various thicknesses and orientations. We offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method , allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical properties and excellent surface quality . Gallium Arsenide can be supplied as ingots and polished wafer, both conducting and semi-insulating GaAs wafer , mechanical grade and epi ready grade are all available . We can offer GaAs wafer with low EPD value and high surface quality suitable for your MOCVD and MBE applications. PAM-XIAMEN can produce wide range grades: prime grade, test grade, and optical grade. Please contact our engineer team for more wafer information.

 

What is the GaAs Process?

 

GaAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.

 

What is the Mechanical properties, elastic constants, lattice vibrations of GaAs Wafer?

Basic Parameter

Bulk modulus 7.53·1011 dyn cm-2
Density 5.317 g cm-3
Hardness on the Mohs scale between 4 and 5
Surface microhardness (using Knoop's pyramid test) 750 kg mm-2
Cleavage plane {110}
Piezoelectric constant e14=-0.16 C m-2

Elastic constants 300 K.

C11=11.90·1011 dyn/cm2
C12=5.34·1011 dyn/cm2
C44=5.96·1011 dyn/cm2

Zn Doped Gallium Arsenide Wafer With Epi Ready 4" Prime Grade Single Crystal Temperature dependences of elastic constants.
For 0<T<Tm=1513K (in units of 1011 dyn cm-2)
C11= 12.17 - 1.44·10-3T
C12= 5.46 - 0.64·10-3T
C44= 6.16 - 0.70·10-3T
 

 

Acoustic Wave Speeds

Wave
propagation
Direction
Wave
character
Expression for wave speed Wave speed
(in units of
105 cm/s)
[100] VL (C11/ρ )1/2 4.73
VT (C44/ρ )1/2 3.35
[110] Vl [(C11+Cl2+2C44)/2ρ ]1/2 5.24
Vt|| Vt||=VT=(C44/ρ)1/2 3.35
Vt⊥ [(C11-C12)/2ρ]1/2 2.48
[111] Vl' [(C11+2C12+4C44)/3ρ]1/2 5.4
Vt' [(C11-C12+C44)/3ρ]1/2 2.8

 

 

Are You Looking for GaAs Wafer?

 

PAM-XIAMEN is your go-to place for everything wafers, including GaAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!

 

About Us

 

Responsibility is the assurance of quality, and quality is the life of corporation. We are looking forward to long term cooperation with customers, we will make best service and after sales service for all of our customers. If you have any inquiry, please don’t hesitate to contact us. We will reply you at the first time as we can.

 

After years of development, we have established perfect sales network and integrated after-sale service system at domestic and abroad, which enables the company to provide timely, accurate and efficient services, and won good customer reputations. The products are sold all over in China and exported to more than 30 countries and regions such as Europe, America, Southeast Asia, South America, Middle East and Africa. The production, sales volume and scale are all ranked first in the same industry.

Contact Details
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Send your inquiry directly to us (0 / 3000)

Other Products