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VGF Indium Phosphide Epi Ready Wafer With CMP Polished 2 Inch P Type

VGF Indium Phosphide Epi Ready Wafer With CMP Polished 2 Inch P Type

VGF Indium Phosphide Epi Ready Wafer With CMP Polished 2 Inch P Type

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: Single Crystal InP Wafer Wafer Diamter: 2 Inch
BOW: <10um Conduction Type: P Type
Suface Finish: P/E, P/P Grade: Prime Grade
Wafer Thickness: 350±25um Keyword: Indium Phosphide Wafer
High Light:

test grade wafer

,

epi ready wafer

P Type , VGF InP Wafer With CMP Polished , 2”, Prime Grade , Epi Ready
 
P Type, InP Wafer, 2”, Prime Grade, Epi Ready

2"InP Wafer Specification   
ItemSpecifications
Conduction TypeP-type
DopantZinc
Wafer Diameter2"
Wafer Orientation100±0.5°
Wafer Thickness350±25um
Primary Flat Length16±2mm
Secondary Flat Length8±1mm
Carrier Concentration≤3x1016cm-3(0.8-6)x1018cm-3(0.6-6)x1018cm-3N/A
Mobility(3.5-4)x103cm2/V.s(1.5-3.5)x103cm2/V.s50-70cm2/V.s>1000cm2/V.s
ResistivityN/AN/AN/A>0.5x107Ω.cm
EPD<1000cm-2<1x103cm-2<1x103cm-2<5x103cm-2
TTV<10um
BOW<10um
WARP<12um
Laser Markingupon request
Suface FinishP/E, P/P
Epi Readyyes
PackageSingle wafer container or cassette

 

PAM-XIAMEN provides single crystal InP(Indium phosphide) wafer for micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 6 inch. Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InP wafer is an important semiconductor material which have superior electrical and thermal properties, InP wafer has higher electron mobility, higher frequency, low power consumption , higher thermal conductivity and low noise performance . PAM-XIAMEN can provide epi ready grade InP wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

 

Indium Phosphide Facts

  • Indium phosphide is also used as a substrate for optoelectronic devices.
  • Molecular weight: 145.792 g/mol
  • Melting point: 1062 °C (1943.6 °F)
  • Indium phosphide (InP) includes phosphorus and indium and is a binary semiconductor.
  • It has a zincblende crystal structure similar to GaAs and almost all the III-V semiconductors.
  • It has superior electron velocity due to which it is used in high-frequency and high-power electronics.
  • It has a direct bandgap, unlike many semiconductors.
  • It has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.
  • InP is the most important material for the generation of laser signals and the detection and conversion of those signals back to electronic form.

 

VGF Indium Phosphide Epi Ready Wafer With CMP Polished 2 Inch P TypeField dependences of the electron drift velocity in InP, 300 K.
Solid curve are theoretical calculation.
Dashed and dotted curve are measured data.
(Maloney and Frey [1977]) and (Gonzalez Sanchez et al. [1992]).
VGF Indium Phosphide Epi Ready Wafer With CMP Polished 2 Inch P TypeThe field dependences of the electron drift velocity for high electric fields.
T(K): 1. 95; 2. 300; 3. 400.
(Windhorn et al. [1983]).
VGF Indium Phosphide Epi Ready Wafer With CMP Polished 2 Inch P TypeField dependences of the electron drift velocity at different temperatures.
Curve 1 -77 K (Gonzalez Sanchez et al. [1992]).
Curve 2 - 300 K, Curve 3 - 500 K (Fawcett and Hill [1975]).
VGF Indium Phosphide Epi Ready Wafer With CMP Polished 2 Inch P TypeElectron temperature versus electric field for 77 K and 300 K.
(Maloney and Frey [1977])
VGF Indium Phosphide Epi Ready Wafer With CMP Polished 2 Inch P TypeFraction of electrons in L and X valleys nL/no and nX/no as a function of electric field, 300 K.
(Borodovskii and Osadchii [1987]).
VGF Indium Phosphide Epi Ready Wafer With CMP Polished 2 Inch P TypeFrequency dependence of the efficiency η at first (solid line) and at the second (dashed line) harmonic in LSA mode.
Monte Carlo simulation.
F = Fo + F1·sin(2π·ft) + F2·[sin(4π·ft)+3π/2],
Fo=F1=35 kV cm-1,
F2=10.5 kV cm-1
(Borodovskii and Osadchii [1987]).
VGF Indium Phosphide Epi Ready Wafer With CMP Polished 2 Inch P TypeLongitudinal (D || F) and transverse (D ⊥ F) electron diffusion coefficients at 300 K.
Ensemble Monte Carlo simulation.
(Aishima and Fukushima [1983]).
VGF Indium Phosphide Epi Ready Wafer With CMP Polished 2 Inch P TypeLongitudinal (D || F) and transverse (D ⊥ F) electron diffusion coefficients at 77K.
Ensemble Monte Carlo simulation.
(Aishima and Fukushima [1983]).

Application in LiDAR systems for the automotive sector and industry 4.0

 
• LiDAR-based sensor technology can provide a high level of object identification and classification with three-dimensional (3D) imaging techniques.
• The automotive industry will adopt a chip-based, low cost solid state LiDAR sensor technology instead of large, expensive, mechanical LiDAR systems in the future.
• For the most advanced chip-based LiDAR systems, InP will play an important role and will enable autonomous driving. (Report: Blistering Growth for Automotive Lidar, Stewart Wills). The longer eye safe wavelength is also more appropriate dealing with real world conditions like dust, fog and rain.

 
Service
 
7X24-hour Telephone Consulting Service is available.
Reply and solution will be provided in 8 hours upon customer’s service request.
After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.
 
Quality inspection from raw material to production, and delivery.
Professional quality control person, to avoid the unqualified products flowing to customer.
Strict inspection to Raw material, production, and delivery.
Full series of equipment in quality laboratory.

 

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