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Undoped InSb Wafer 2 Inch As Cut Wafer Mechanical Polished Type

Undoped InSb Wafer 2 Inch As Cut Wafer Mechanical Polished Type

Undoped InSb Wafer 2 Inch As Cut Wafer Mechanical Polished Type

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Feature: Single Crystal InSb Wafer Product Name: Undoped Indium Antimonide InSb Wafer
Wafer Thickness: 625±25um Keyword: Mechanical Wafer
Package: Epi-Ready,Single Wafer Container Or CF Cassette Wafer Diamter: 2″
Primary Flat Length: 2″16±2mm Secondary Flat Length: 2″8±1mm
High Light:

polished silicon wafer


insb wafer

Undoped InSb Wafer, 2”, As-Cut Wafer, Mechanical Wafer, Or Polished Wafer

Undoped InSb Wafer, 2”, As-Cut Wafer, Mechanical Wafer, Or Polished Wafer

Please contact our engineer team for more wafer information.

Wafer Specification
Item Specifications
Wafer Diameter



Crystal Orientation






Primary flat length



Secondary flat length



Surface Finish P/E, P/P
Package Epi-Ready,Single wafer container or CF cassette


Electrical and Doping Specification
Conduction Type n-type
Dopant Undoped
EPD cm-2 ≤50
Mobility cm² V-1s-1 ≥4*105
Carrier Concentration cm-3 5*1013-3*1014


PAM-XIAMEN provides single crystal InSb(Indium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. Indium Antimonide (InSb) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness.PAM-XIAMEN can provide epi ready grade InSb wafer for your MOCVD & MBE epitaxial application .

Basic Parameters

Energy gap 0.17 eV
Energy separation (EΓL) between Γ and L valleys 0.51 eV
Energy separation (EΓX) between Γ and X valleys 0.83 eV
Energy spin-orbital splitting 0.80 eV
Intrinsic carrier concentration 2·1016 cm-3
Intrinsic resistivity 4·10-3 Ω·cm
Effective conduction band density of states 4.2·1016 cm-3
Effective valence band density of states 7.3·1018 cm-3


Undoped InSb Wafer 2 Inch As Cut Wafer Mechanical Polished Type Band structure and carrier concentration of InSb 300 K
Eg = 0.17 eV
EL = 0.68 eV
EX= 1.0 eV
Eso = 0.8 eV

Temperature Dependences

Temperature dependence of the energy gap

Eg = 0.24 - 6·10-4·T2/(T+500) (eV),
where T is temperatures in degrees K (0 < T < 300).

Effective density of states in the conduction band

Nc~ 8·1012·T3/2 (cm-3)

Effective density of states in the valence band

Nn ~ 1.4·1015·T3/2 (cm-3).

Intrinsic Carrier Concentration

ni = (Nc·Nν)1/2exp(-Eg/(2kbT))
For 200K < T < 800 K ni = 2.9·1011(2400 - T)3/4 ·(1+2.7·10-4·T)·T3/2 ·exp(-(0.129 - 1.5·10-4T)/(2kbT)) (cm-3)

Effective Masses

For Γ-valley mΓ = 0.0.14mo
E(1+αE) = h2k2/(2mΓ)
α = 4.1 (eV-1)
In the L-valley effective mass of density of states mL=0.25mo


Holes: mh = 0.43mo
Heavy mh = 0.43mo
Light mlp = 0.015mo
Split-off band mso = 0.19mo
Effective mass of density of states mv = 0.43mo

Donors and Acceptors

Ionization energies of shallow donors ~0.0007 (eV):

Se, S, Te.

Ionization energies of shallow acceptors (eV):

Cd Zn Cr Cu° Cu-
0.01 0.01 0.07 0.028 0.056





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Full series of equipment in quality laboratory.


About Us


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We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.



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