|Place of Origin:||China|
|Minimum Order Quantity:||1-10,000pcs|
|Packaging Details:||Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere|
|Delivery Time:||5-50 working days|
|Supply Ability:||10,000 wafers/month|
|Product Name:||Undoped InAs Wafer||Wafer Thickness:||600±25um|
|Conduction Type:||N Type||Wafer Diamter:||3 Inch|
|Grade:||Prime Grade||Keyword:||Indium Arsenide InAs Wafer|
|Primary Flat Length:||22±2mm||Secondary Flat Length:||11±1mm|
n type wafer,
Undoped InAs Semiconductor Wafer , 3”, Prime Grade
3" InAs Wafer Specification
|Primary Flat Length||22±2mm|
|Secondary Flat Length||11±1mm|
|Laser marking||upon request|
|Suface finish||P/E, P/P|
|Package||Single wafer container or cassette|
What is a InAs test Wafer?
Most test wafers are wafers which have fallen out of prime specifications. Test wafers may be used to run marathons, test equipment and for high-end R & D. They are often a cost-effective alternative to prime wafers.
7X24-hour Telephone Consulting Service is available.
Reply and solution will be provided in 8 hours upon customer’s service request.
After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.
Quality inspection from raw material to production, and delivery.
Professional quality control person, to avoid the unqualified products flowing to customer.
Strict inspection to Raw material, production, and delivery.
Full series of equipment in quality laboratory.
|Infrared refractive index||≈3.51 (300 K)|
|Radiative recombination coefficient||1.1·10-10 cm3/s|
|Long-wave TO phonon energy hνTO||≈27 meV (300 K)|
|Long-wave LO phonon energy hνLO||≈29 meV (300 K)|
|Refractive index n versus photon energy.
Solid curve is theoretical calculation.
Points represent experimental data, 300 K.
For 3.75 µm < λ < 33 µm
n = [11.1 + 0.71/(1-6.5·λ-2) + 2.75/(1-2085·λ-2) - 6·10-4·λ2)]1/2,
where λ is the wavelength in µn (300 K)
|Normal incidence reflectivity versus photon energy, 300 K
|Absorption coefficient near the intrinsic absorption edge for n-InAs.
|Absorption coefficient versus photon energy for different donor concentration, 300 K
n (cm-3): 1. 3.6·1016, 2. 6·1017, 3. 3.8·1018.
A ground state Rydberg energy RX1= 3.5 meV
|Absorption coefficient versus photon energy, T = 300 K
|Free carrier absorption versus wavelength at different electron concentrations. T=300 K.
no (cm-3): 1. 3.9·1018; 2. 7.8·1017; 3. 2.5·1017; 4. 2.8·1016;
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We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.