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Undoped Indium Arsenide Wafer InAs Semiconductor Wafer 3 Inch Prime Grade

Undoped Indium Arsenide Wafer InAs Semiconductor Wafer 3 Inch Prime Grade

Undoped Indium Arsenide Wafer InAs Semiconductor Wafer 3 Inch Prime Grade

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: Undoped InAs Wafer Wafer Thickness: 600±25um
Conduction Type: N Type Wafer Diamter: 3 Inch
Grade: Prime Grade Keyword: Indium Arsenide InAs Wafer
Primary Flat Length: 22±2mm Secondary Flat Length: 11±1mm
High Light:

n type wafer

,

inas wafer

Undoped InAs Semiconductor Wafer , 3”, Prime Grade

 

3" InAs Wafer Specification

Item Specifications
Dopant Undoped
Conduction Type N-type
Wafer Diameter 3"
Wafer Orientation (100)±0.5°
Wafer Thickness 600±25um
Primary Flat Length 22±2mm
Secondary Flat Length 11±1mm
Carrier Concentration 5x1016cm-3
Mobility ≥2x104cm2/V.s
EPD <5x104cm-2
TTV <12um
BOW <12um
WARP <15um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

 

What is a InAs test Wafer?

Most test wafers are wafers which have fallen out of prime specifications. Test wafers may be used to run marathons, test equipment and for high-end R & D. They are often a cost-effective alternative to prime wafers.

 

Service

 

7X24-hour Telephone Consulting Service is available.

Reply and solution will be provided in 8 hours upon customer’s service request.

After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.

 

Quality inspection from raw material to production, and delivery.

Professional quality control person, to avoid the unqualified products flowing to customer.

Strict inspection to Raw material, production, and delivery.

Full series of equipment in quality laboratory.

Optical properties of InAs wafer

Infrared refractive index ≈3.51 (300 K)
Radiative recombination coefficient 1.1·10-10 cm3/s
Long-wave TO phonon energy hνTO ≈27 meV (300 K)
Long-wave LO phonon energy hνLO ≈29 meV (300 K)

 

Undoped Indium Arsenide Wafer InAs Semiconductor Wafer 3 Inch Prime Grade Refractive index n versus photon energy.
Solid curve is theoretical calculation.
Points represent experimental data, 300 K.

For 3.75 µm < λ < 33 µm
n = [11.1 + 0.71/(1-6.5·λ-2) + 2.75/(1-2085·λ-2) - 6·10-4·λ2)]1/2,
where λ is the wavelength in µn (300 K)
 

Undoped Indium Arsenide Wafer InAs Semiconductor Wafer 3 Inch Prime Grade Normal incidence reflectivity versus photon energy, 300 K
 
Undoped Indium Arsenide Wafer InAs Semiconductor Wafer 3 Inch Prime Grade Absorption coefficient near the intrinsic absorption edge for n-InAs.
T=4.2 K
 
Undoped Indium Arsenide Wafer InAs Semiconductor Wafer 3 Inch Prime Grade Absorption coefficient versus photon energy for different donor concentration, 300 K
n (cm-3): 1. 3.6·1016, 2. 6·1017, 3. 3.8·1018.
 

A ground state Rydberg energy RX1= 3.5 meV

Undoped Indium Arsenide Wafer InAs Semiconductor Wafer 3 Inch Prime Grade Absorption coefficient versus photon energy, T = 300 K
 
Undoped Indium Arsenide Wafer InAs Semiconductor Wafer 3 Inch Prime Grade Free carrier absorption versus wavelength at different electron concentrations. T=300 K.
no (cm-3): 1. 3.9·1018; 2. 7.8·1017; 3. 2.5·1017; 4. 2.8·1016;
 

 

About Us

 

Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.

 

We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.

 

Contact Details
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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