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Undoped Indium Arsenide Wafer 4 Inch Epi Ready Test Grade N Type

Undoped Indium Arsenide Wafer 4 Inch Epi Ready Test Grade N Type

Undoped Indium Arsenide Wafer 4 Inch Epi Ready Test Grade N Type

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Product Name: Indium Arsenide InAs Wafer Wafer Diamter: 4 Inch
Conduction Type: N Type Grade: Test Grade
Wafer Thickness: 900±25um Keyword: Indium Arsenide Wafer
High Light:

n type wafer

,

inas wafer

Undoped Indium Arsenide Substrate, 4”, Test Grade

 

What is the InAs Process?

 

InAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.

 

Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.

 

4" InAs Wafer Specification

Item Specifications
Dopant Undoped
Conduction Type N-type
Wafer Diameter 4"
Wafer Orientation (100)±0.5°
Wafer Thickness 900±25um
Primary Flat Length 16±2mm
Secondary Flat Length 8±1mm
Carrier Concentration 5x1016cm-3
Mobility ≥2x104cm2/V.s
EPD <5x104cm-2
TTV <15um
BOW <15um
WARP <20um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

 

Thermal properties of InAs Wafer

Bulk modulus 5.8·1011 dyn cm-2
Melting point 942 °C
Specific heat 0.25 J g-1 °C-1
Thermal conductivity 0.27 W cm-1 °C-1
Thermal diffusivity 0.19 cm2s-1
Thermal expansion, linear 4.52·10-6 °C-1

 

Undoped Indium Arsenide Wafer 4 Inch Epi Ready Test Grade N Type

Temperature dependence of thermal conductivity.
n-type sample, no (cm-3): 1. 1.6·1016; 2. 2.0·1017;
p-type sample, po (cm-3): 3. 2.0·1017.
 

Undoped Indium Arsenide Wafer 4 Inch Epi Ready Test Grade N Type Temperature dependences of thermal conductivity for high temperatures
Electron concentration
no (cm-3): 1. 5·1016; 2. 2·1016; 3. 3·1016.
Undoped Indium Arsenide Wafer 4 Inch Epi Ready Test Grade N Type Temperature dependence of specific heat at constant pressure
 

For 298K < T < 1215K

Cp= 0.240 + 3.97·10-5·T (J g-1°C -1).

 

Undoped Indium Arsenide Wafer 4 Inch Epi Ready Test Grade N Type Temperature dependence of linear expansion coefficient
(low temperature)
 
Undoped Indium Arsenide Wafer 4 Inch Epi Ready Test Grade N Type Temperature dependence of linear expansion coefficient
(high temperature)
 
Undoped Indium Arsenide Wafer 4 Inch Epi Ready Test Grade N Type Temperature dependences of Nernst coefficient (transverse Nernst-Ettinghausen effect)
Electron concentration at 77K
no (cm-3): 1. 2.96·1016; 2. 4.46·1016; 3. 8.43·1016; 4. 4.53·1017; 5. 1.56·1018; 6. 2.28·1018; 7. 5·1018; 8. 1.68·1019.
 

Melting point Tm = 1215 K.
Saturated vapor pressure (in Pascals):

for 950 K - 2·10-3,
for 1000 K - 10-2,
for 1050 K - 10-1.

 

Are You Looking for an InAs substrate?

 

PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InAs wafers, send us enquiry today to learn more about how we can work with you to get you the InAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

 

About Us

 

Continuous improvement, seeking higher quality level. Our highly dedicated sales staff has never shied away from going that extra mile to meet and exceed the customer’s expectations. We treat our customers with the same loyalty and devotion, no matter the size of their business or industry.

 

We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.

 

Contact Details
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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