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Undoped Gallium Antimonide Substrate 4 Inch Diameter Polished Wafer

Undoped Gallium Antimonide Substrate 4 Inch Diameter Polished Wafer

Undoped Gallium Antimonide Substrate 4 Inch Diameter Polished Wafer

Product Details:

Place of Origin: China
Brand Name: PAM-XIAMEN

Payment & Shipping Terms:

Minimum Order Quantity: 1-10,000pcs
Price: By Case
Delivery Time: 5-50 working days
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
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Detailed Product Description
Conduction Type: P Type Other Name: GaSb Polished Wafer
Product Name: Gallium Antimonide Substrate Wafer Dopant: Undoped
Wafer Thickness: 800±25um Wafer Diameter: 4 Inch
BOW: <15um WARP: <20um
High Light:

2 inch wafer

,

4 inch wafer

Undoped Gallium Antimonide Wafer Substrate , 4”, Polished Wafer , Epi Ready

 

4" GaSb Wafer Specification

Item Specifications
Dopant Undoped
Conduction Type P-type
Wafer Diameter 4"
Wafer Orientation (100)±0.5°
Wafer Thickness 800±25um
Primary Flat Length 32.5±2.5mm
Secondary Flat Length 18±1mm
Carrier Concentration (1-2)x1017cm-3
Mobility 600-700cm2/V.s
EPD <2x103cm-2
TTV <15um
BOW <15um
WARP <20um
Laser marking upon request
Suface finish P/E, P/P
Epi ready yes
Package Single wafer container or cassette

Thermal and mechanical properties of GaSb Wafer

Bulk modulus 5.63·1011 dyn cm-2
Melting point 712 °C
Specific heat 0.25 J g-1°C -1
Thermal conductivity 0.32 W cm-1 °C-1
Thermal diffusivity 0.23 cm2s-1
Thermal expansion, linear 7.75·10-6 °C -1

 

We have a clean and tidy, wide workshop and a production and development team with rich experience, providing strong support for your r&d and production needs!All of our products comply with international quality standards and are greatly appreciated in a variety of different markets throughout the world. If you are interested in any of our products or would like to discuss a custom order, please feel free to contact us. We are looking forward to forming successful business relationships with new clients around the world in the near future.

 

PAM-XIAMEN offers GaSb wafer – Gallium Antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111)or(100).Gallium antimonide (GaSb) is a crystalline compound made from the elements Gallium (Ga) and antimony (Sb).

 

Undoped Gallium Antimonide Substrate 4 Inch Diameter Polished Wafer Temperature dependence of thermal conductivity n-GaSb.
Electron concentration at 300 K
n-type sample, no (cm-3): 1. 1.6·1017; 2. 8.6·1017; 3. 1.8·1018;
p-type sample. 4. Undoped GaSb po = 1.42·1017(cm-3)
 
Undoped Gallium Antimonide Substrate 4 Inch Diameter Polished Wafer Temperature dependence of thermal conductivity
(for high temperature)
 
Undoped Gallium Antimonide Substrate 4 Inch Diameter Polished Wafer Temperature dependence of specific heat at constant pressure
 
Undoped Gallium Antimonide Substrate 4 Inch Diameter Polished Wafer Temperature dependence of linear expansion coefficient
 

 

 

Are You Looking for an GaSb substrate?

 

PAM-XIAMEN is proud to offer Gallium antimonide substrate for all different kinds of projects. If you are looking for GaSb wafers, send us enquiry today to learn more about how we can work with you to get you the GaSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

 

Service

 

7X24-hour Telephone Consulting Service is available.

Reply and solution will be provided in 8 hours upon customer’s service request.

After-sales Support is available on a 7X24-hour basis, leaving no worries for customers.

 

Quality inspection from raw material to production, and delivery.

Professional quality control person, to avoid the unqualified products flowing to customer.

Strict inspection to Raw material, production, and delivery.

Full series of equipment in quality laboratory.

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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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